A non-volatile memory system comprises an integrated memory assembly in communication with a memory controller. The integrated memory assembly includes a memory die bonded to a control die. The control die includes one or more control circuits for controlling the operation of the memory die. The control circuits are configured to receive a request to copy data on the memory die, read codewords on the memory die in response to the request, decode the codewords to identify errors in the codewords, correcting the errors in the codewords, and program the codewords back into the memory die. In one embodiment, the codewords read are stored in the memory die as single bit per memory cell data and the codewords programmed back into the memory die after correcting errors are programmed as multiple bit per memory cell data.

Methods, systems, and devices for memory cells for storing operational data are described. A memory device may include an array of memory cells with different sets of cells for storing data. A first set of memory cells may store data for operating the memory device, and the associated memory cells may each contain a chalcogenide storage element. A second set of memory cells may store host data. Some memory cells included in the first set may be programmed to store a first logic state and other memory cells in the first set may be left unprogrammed (and may represent a second logic state). Sense circuitry may be coupled with the array and may determine a value of data stored by the first set of memory cells.

A system includes a multidimensional array of homogenous Functional Configurable Units (FCUs), coupled using a multidimensional array of switches, and a parameter store on the device which stores parameters that tag a subarray of FCUs as unusable. Technologies are described which change the pattern of placement of configuration data, in dependence on the tagged subarray, by changing the routing through the array of switches. As a result, a multidimensional array of FCUs having unusable elements can still be used.

The present disclosure provides example memory fault handling method, computer device, and computer-readable storage medium. One example method includes starting fault analysis for a memory at a first moment, where the fault analysis includes obtaining a current fault analysis result of the memory by analyzing historical fault information, the historical fault information includes fault information of the memory accumulated in a historical time period, and the historical time period is a time period before the first moment or a time period before the first moment and including the first moment. Fault recovery is started for the memory based on the current fault analysis result of the memory.

A device architecture includes a spatially reconfigurable array of processors, such as configurable units of a CGRA, having spare elements, and a parameter store on the device which stores parameters that tag one or more elements as unusable. Technologies are described which change the pattern of placement of configuration data, in dependence on the tagged elements. As a result, a spatially reconfigurable array having unusable elements can be repaired.

A memory device includes a cell array including a plurality of pages and a control logic configured to control program and read operations of the cell array. The control logic controls the program and read operations to store first through N-th codewords in a first page among the pages and program a page parity corresponding in common to the first through N-th codewords to the first page in response to a program command for a page unit and to selectively read the first codeword among the first through N-th codewords in response to a read command for a sub-page unit, where N is an integer of at least 2. The first codeword includes first sub-page data and a first sub-parity corresponding thereto, and the first sub-parity includes information for correcting an error in the first sub-page data through error correction code (ECC) decoding independently performed on each codeword.

A non-volatile memory system comprises an integrated memory assembly in communication with a memory controller. The integrated memory assembly includes a memory die bonded to a control die. The control die includes one or more control circuits for controlling the operation of the memory die. The control circuits are configured to receive a request to copy data on the memory die, read codewords on the memory die in response to the request, decode the codewords to identify errors in the codewords, correcting the errors in the codewords, and program the codewords back into the memory die. In one embodiment, the codewords read are stored in the memory die as single bit per memory cell data and the codewords programmed back into the memory die after correcting errors are programmed as multiple bit per memory cell data.

A system includes a multidimensional array of homogenous Functional Configurable Units (FCUs), coupled using a multidimensional array of switches, and a parameter store on the device which stores parameters that tag a subarray of FCUs as unusable. Technologies are described which change the pattern of placement of configuration data, in dependence on the tagged subarray, by changing the routing through the array of switches. As a result, a multidimensional array of FCUs having unusable elements can still be used.

A memory may include a first repair analysis circuit suitable for storing an input fail address when the input fail address is different from a fail address which is already stored in the first repair analysis circuit, and outputting the input fail address as a first transfer fail address when a storage capacity of the first repair analysis circuit is full; and a second repair analysis circuit suitable for storing the first transfer fail address when the first transfer fail address is different from a fail address which is already stored in the second repair analysis circuit.

A non-volatile memory system comprises an integrated memory assembly in communication with a memory controller. The integrated memory assembly includes a memory die bonded to a control die. The control die includes one or more control circuits for controlling the operation of the memory die. The control circuits are configured to receive a request to copy data on the memory die, read codewords on the memory die in response to the request, decode the codewords to identify errors in the codewords, correcting the errors in the codewords, and program the codewords back into the memory die. In one embodiment, the codewords read are stored in the memory die as single bit per memory cell data and the codewords programmed back into the memory die after correcting errors are programmed as multiple bit per memory cell data.