A memory system includes a nonvolatile semiconductor memory including a first memory region for storing start-up information and a second memory region for storing a copy of the start-up information, a volatile semiconductor memory, and a controller. The controller is configured to determine whether or not an address of the second memory region is stored in the volatile semiconductor memory, issue a first start-up read command, which designates no read address, to the nonvolatile semiconductor memory to read the start-up information from the first memory region if the address of the second memory region is not stored in the volatile semiconductor memory, and issue a second start-up read command, which designates the address of the second memory region as a read address, to read the start-up information from the second memory region if the address of the second memory region is stored in the volatile semiconductor memory.

An electronic system such as an imaging system may include processing circuitry and memory circuitry. The memory circuitry may include one-time-programmable memory having error correction code functionalities (e.g., SECDED functionalities). The one-time-programmable memory may have a first set of previously programmed bits and a second set of unprogrammed and unused bits. The processing circuitry may process instructions to update a bit in the second set of bits. To preserve the ECC functionalities (e.g., the ECC check bits associated with the first and second sets of bits, the processing circuitry may also update additional bits in the second set of bits.

Field configurable bad block repair for a memory array comprising a plurality of blocks utilizes a block repair information store for data identifying one or more bad blocks in the array. The block repair information store includes nonvolatile memory writable at least once. Block repair circuitry on the device is configurable to redirect commands to access bad blocks identified in the bad block repair information store to reserved blocks in the memory array. A controller is responsive to a command to write bad block repair information, such as an identifier of a bad block in the plurality of blocks to the block repair information store in the field, and to reconfigure the block repair circuitry in the field using the updated information.

A memory may include a first repair analysis circuit suitable for storing an input fail address when the input fail address is different from a fail address which is already stored in the first repair analysis circuit, and outputting the input fail address as a first transfer fail address when a storage capacity of the first repair analysis circuit is full; and a second repair analysis circuit suitable for storing the first transfer fail address when the first transfer fail address is different from a fail address which is already stored in the second repair analysis circuit.

Methods, systems, and devices for memory health status reporting are described. A memory device may output to a host device a parameter value, which may be indicative of metric or condition related to the performance or reliability (e.g., a health status) of the memory device of the memory device. The host device may thereby determine that the memory device is degraded, possibly prior to device or system failure. Based on the parameter value, the host device may take preventative action, such as quarantining the memory device, deactivating the memory device, or swapping the memory device for another memory device.

A semiconductor memory device includes a memory cell array, a read/write circuit, control logic, and a bit flip sensor. The memory cell array includes a plurality of memory cells. The read/write circuit is configured to receive program data, and perform a program operation on selected memory cells among the plurality of memory cells, based on the program data. The bit flip sensor is configured to receive the program data from the read/write circuit, and determine whether a bit flip has occurred in the program data. The control logic is configured to control the program operation of the read/write circuit, and generate program status information, based on a determination result of the bit flip sensor.

Methods, systems, and devices for adjustable column address scramble using fuses are described. A testing device may detect a first error in a first column plane of a memory array and a second error in a second column plane of the memory array. The testing device may identify a first column address of the first column plane associated with the first error and a second column address of the second column plane based on detecting the first error and the second error. The testing device may determine, for the first column plane, a configuration for scrambling column addresses of the first column plane to different column addresses of the first column plane. In some cases, the testing device may perform a fuse blow of a fuse associated with the first column plane to implement the determined configuration.

A modular Error Correction Code (ECC) scheme in a multi-channel IO link of an integrated circuit device is provided. The integrated circuit device may include core logic circuitry that may be configured after manufacturing. To accommodate the resulting variation, the modular ECC scheme may allow for partitioning a parity check matrix associated with the configuration of the core logic and peripheries coupled to the core logic. The parity check matrix is partitioned into smaller block matrices that is programmable. Multiple ECC modules corresponding to the block matrices are used to provide error detection and correction in the multi-channel IO link. The modular ECC scheme combined with programmable matrices (configurability) enables multi-channel IO link to be flexible to form different IO topologies.

Techniques are provided for storing a row address of a defective row of memory cells to a bank of non-volatile storage elements (e.g., fuses or anti-fuses). After a memory device has been packaged, one or more rows of memory cells may become defective. In order to repair (e.g., replace) the rows, a post-package repair (PPR) operation may occur to replace the defective row with a redundant row of the memory array. To replace the defective row with a redundant row, an address of the defective row may be stored (e.g., mapped) to an available bank of non-volatile storage elements that is associated with a redundant row. Based on the bank of non-volatile storage elements the address of the defective row, subsequent access operations may utilize the redundant row and not the defective row.

A memory system including a first central processing unit, a first memory module connected to the first central processing unit by a first channel, a second memory module connected to the first central processing unit by a second channel, and a third memory module connected to the first central processing unit by a third channel may be provided. Each of the first memory module, the second memory module, and the third memory module may be configured to write the same data in a data area thereof and a mirroring data area thereof in response to an address in a mirroring mode.