In the described examples, a memory controller includes a read-modify-write logic module that receives a partial write data request for partial write data in error-correcting code (ECC) memory and combines the partial write data in the partial write data request with read data provided from the ECC memory to form combined data prior to correcting the read data. The memory controller also includes a write control module that controls the writing of the combined data to the ECC memory.

A memory controlling device configured to connect to a first memory module including a resistance switching memory cell array which is partitioned into a plurality of partitions and a second memory module used for a cache is provided. A cache controller splits an address of a read request into at least a first cache index and a first tag, and determines whether the read request is a cache hit or a cache miss by referring to a lookup logic based on the first cache index and the first tag. The cache controller instructs the memory controller to read target data of the read request from the first memory module when the read request targets to the second partition in a case where the read request is the cache miss and a write to the first partition is in progress.

Aspects of the present disclosure include a memory sub-system configured to reduce latency and power consumption during a read-write cycle. The memory system comprises a first memory component and a processing device operatively coupled to the first memory component. The processing device is configured to receive a request to write a first sequence of data bits from a first data block of a second memory component to memory media of the first memory component. In response to receiving the request, the processing device reads a second sequence of data bits from a second data block stored in the memory media of the first memory component, and compares the first sequence of data bits with the second sequence of data bits. The processing device determines whether to execute a write cycle, at the first memory component, to write the first sequence of data bits from the first data block to the memory media of the first memory component based on a result of comparing the first sequence of data bits with the second sequence of data bits.

In the described examples, a memory controller includes a read-modify-write logic module that receives a partial write data request for partial write data in error-correcting code (ECC) memory and combines the partial write data in the partial write data request with read data provided from the ECC memory to form combined data prior to correcting the read data. The memory controller also includes a write control module that controls the writing of the combined data to the ECC memory.

A memory device may include a memory cell array having a plurality of memory cells, and a controller suitable for reading data of a memory cell corresponding to an address of write data, among the memory cells, and comparing the write data and the read data to check specific bits different from corresponding bits of the read data, among a plurality of bits of the write data, according to a write operation request. The controller may output a check result to outside after a preset time from the write operation request.

A byte-programming method for programming data from a page register to a non-volatile memory array includes reading data of a selected byte in the page register and programming the data to the memory cells of the non-volatile memory corresponding to a selected column address; determining whether to update an array column address according to the selected column address, which includes: determining whether the data of the selected byte meets specified content; when the data of the selected byte meets the specified content, not updating the array column address; and when the data of the selected byte doesn't meet the specified content, updating the array column address according to the selected column address; and determining whether the selected column address is the last column address.

A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

A memory system may include: a memory device having a plurality of banks, each comprising a memory cell region including a plurality of memory cells, and a page buffer unit; and a controller suitable for receiving a write address and write data from a host, and controlling a write operation of the memory device, wherein the controller comprises: a page buffer table (PBT) comprising fields to retain the same data as the page buffer units of the respective banks; and a processor suitable for comparing the write data to data stored in a field of the PBT, corresponding to the write address, and controlling the memory device to write the write data or the data stored in the page buffer unit to memory cells selected according to the write address, based on a comparison result.

An autocorrective writing to a multiport static random access memory device is performed on at least one multiport static random access memory cell circuit. A first datum is written to the multiport static random access memory cell circuit and a second datum stored in the circuit is read from the multiport static random access memory cell subsequent to writing. The first and second data are compared. In response to the results of that comparison, an operation to rewriting the first datum to the circuit along with application of a write assist mechanism is selectively performed.

A method and apparatus for reducing dynamic power consumption in a multi-thread content-addressable memory (CAM) is described. The disclosed apparatus includes a first input configured to receive a first virtual address corresponding to a first thread, a second input configured to receive a second virtual address corresponding to a second thread, a register bank including a plurality of registers each configured to store a binary word mapped to one of a plurality of physical addresses, a first comparator bank including a first plurality of comparators each coupled to one of the plurality of registers in a fully-associative configuration and configured to determine whether a first match is present, and a second comparator bank including a second plurality of comparators each coupled to one of the plurality of registers in a fully-associative configuration and configured to determine whether a second match is present.