According to one embodiment, a controller determines a write operation, when a write request to a memory, a write address and data are received, by comparing an amount of use of a write buffer and a threshold for determining a change of a write operation to the memory. The memory is capable of overwriting first data to second data at an identical physical address of the memory. By the determined write operation, the received data is written to the received write address of the memory.

Technology for writing data to a phase change memory array is disclosed. In an example, a method may include identifying mask logic for masking cells in the phase change memory array and routing the mask logic to the cells. The method may further include routing input data to the cells. Set and reset pulses for the cells may be selectively prevented or inhibited based on the mask logic.

A memory device may include a memory cell array having a plurality of memory cells, and a controller suitable for reading data of a memory cell corresponding to an address of write data, among the memory cells, and comparing the write data and the read data to check specific bits different from corresponding bits of the read data, among a plurality of bits of the write data, according to a write operation request. The controller may output a check result to outside after a preset time from the write operation request.

In the described examples, a memory controller includes a read-modify-write logic module that receives a partial write data request for partial write data in error-correcting code (ECC) memory and combines the partial write data in the partial write data request with read data provided from the ECC memory to form combined data prior to correcting the read data. The memory controller also includes a write control module that controls the writing of the combined data to the ECC memory.

Memory devices, controllers and associated methods are disclosed. In one embodiment, a memory device is disclosed. The memory device includes storage cells that are each formed with a metal-oxide-semiconductor (MOS) transistor having a floating body. Data is stored as charge in the floating body. A transfer interface receives a read command to access data stored in a first group of the storage cells. Sensing circuitry detects the data stored in the first group of storage cells. The transfer interface selectively performs a writeback operation of the sensed data associated with the read command.

A method and apparatus for reducing dynamic power consumption in a multi-thread content-addressable memory (CAM) is described. The disclosed apparatus includes a first input configured to receive a first virtual address corresponding to a first thread, a second input configured to receive a second virtual address corresponding to a second thread, a register bank including a plurality of registers each configured to store a binary word mapped to one of a plurality of physical addresses, a first comparator bank including a first plurality of comparators each coupled to one of the plurality of registers in a fully-associative configuration and configured to determine whether a first match is present, and a second comparator bank including a second plurality of comparators each coupled to one of the plurality of registers in a fully-associative configuration and configured to determine whether a second match is present.

A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

An autocorrective writing to a multiport static random access memory device is performed on at least one multiport static random access memory cell circuit. A first datum is written to the multiport static random access memory cell circuit and a second datum stored in the circuit is read from the multiport static random access memory cell subsequent to writing. The first and second data are compared. In response to the results of that comparison, an operation to rewriting the first datum to the circuit along with application of a write assist mechanism is selectively performed.

A method and apparatus for reducing dynamic power consumption in a multi-thread content-addressable memory is described. The apparatus includes a first input configured to receive a first virtual address corresponding to a first thread, a second input configured to receive a second virtual address corresponding to a second thread, a register bank including a plurality of registers each configured to store a binary word mapped to one of a plurality of physical addresses, a first comparator bank including a first plurality of comparators each coupled to an associated register of the plurality of registers in a fully-associative configuration, and a second comparator bank including a second plurality of comparators each coupled to an associated register of the plurality of registers in a fully-associative configuration. An input virtual address to each comparator bank maintains its previous value for when a corresponding thread is not selected.

A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.