Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.

Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.

Memory structures with a plurality of memory cells that each include memory devices in combination with switch devices are provided. The memory device and switch device of each cell are connected in series, and include at least first and second electrodes. The first electrode features a relatively high resistance, to provide a reduced snap current during operation of the memory device. The first electrode with a relatively high resistance can contain or be entirely composed of TiAlN.

Memory structures with a plurality of memory cells that each include memory devices in combination with switch devices are provided. The memory device and switch device of each cell are connected in series, and include at least first and second electrodes. The first electrode features a relatively high resistance, to provide a reduced snap current during operation of the memory device. The first electrode with a relatively high resistance can contain or be entirely composed of TiAlN.

Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.

Disclosed herein is a memory device operating based on proton conduction between a source electrode and a drain electrode through a proton-conducting layer. As the memory device operates, protons from the source migrate through the proton-conducting layer and into the drain electrode. The memory device exhibits memory, in the form of changing net conductivity, based on the amount of protons conducted from source to drain. The memory device can be reset by regenerating the source electrode (e.g., through electrical or chemical action). The memory device can be incorporated into an integrated circuit as a memory element. Related methods of using the memory device are also disclosed.