A memory device includes a memory cell array including a plurality of memory cells, a peripheral circuit configured to perform a background erase operation on memory cells selected from among the plurality of memory cells, and a control logic configured to control, when a foreground operation command is inputted while the background erase operation is being performed, the peripheral circuit so that the background erase operation is suspended in response to input of a confirm command for the foreground operation command.

A memory device includes a memory array comprising memory cells and control logic operatively coupled with the memory array. The control logic causes, as part of a true erase sub-operation, an erase pulse to be applied to one or more sub-blocks of the memory array. The control logic tracks a number of suspend commands received from a processing device, including suspend commands received while memory cells of the one or more sub-blocks are being erased. The control logic causes, in response to receiving each suspend command, the true erase sub-operation to be suspended to enable performing a non-erase memory operation. The control logic, in response to the number of suspend commands satisfying a threshold criterion, alerts the processing device to terminate sending suspend commands.

Apparatus, systems, methods, and computer program products for providing dynamically assignable data latches are disclosed. A non-volatile memory die includes a non-volatile memory medium. A plurality of sets of data latches of a non-volatile memory die are configured to facilitate transmission of data to and from a non-volatile memory medium, and each of the sets of data latches are associated with a different identifier. An on-die controller is in communication with a sets of data latches. An on-die controller is configured to receive a first command for a first memory operation comprising a selected identifier. An on-die controller is configured to execute a first memory operation on a non-volatile memory medium using a set of data latches of a plurality of sets of data latches, and the set of data latches is associated with a selected identifier.

An apparatus is described. The apparatus includes a memory chip having logic circuitry to suspend application of an erasure voltage, wherein, respective responses of the erasure voltage to a decision to suspend the application of the erasure voltage depend on where the erasure voltage is along its waveform.

One embodiment facilitates a high-priority read. During operation, the system receives, by a controller module of a storage device, a first request to write first data to a non-volatile memory of the storage device. The system commences a write operation to write the first data to the non-volatile memory. In response to detecting a second request to read second data from the non-volatile memory, the system: suspends the write operation; reads the second data from the non-volatile memory; and resumes the suspended write operation.

A page buffer circuit includes a sensing latch circuit and a caching latch circuit. The sensing latch circuit is configured to receive and sense data that is stored in a memory cell during a normal read operation. The caching latch circuit is configured to receive and sense the data that is stored in the memory cell during a suspend read operation.

A nonvolatile memory controller and a method for erase suspend management are disclosed. The nonvolatile memory controller includes an erase suspend circuit configured for determining a pre-suspend time each time that an erase operation of the nonvolatile memory device is suspended and for determining whether an erase-suspend limit has been reached using the determined pre-suspend time. The erase suspend circuit is further configured for incrementing the number of program and erase cycles when the erase-suspend limit has been reached.

A memory device can include: a memory array comprising a plurality of memory cells; an interface configured to receive a suspend command and first and second write commands from a host, where the second write command is of higher priority and follows the first write command; a status register configured to store an automatic resume enable bit; a memory controller configured to suspend, in response to the suspend command, a first write operation that is executing the first write command on the memory array; the memory controller being configured to execute a second write operation on the memory array in response to the second write command; and the memory controller being configured to resume the first write operation upon completion of the second write operation in response to the automatic resume enable bit being set.

A memory system may include: a memory device; and a controller configured to: perform a read operation and an erase operation to the memory device; predict a first required time when a read command is received during the performing of the erase operation, the first required time being based on a sum including a first time required for the read operation in response to the read command and a second time required for the on-going erase operation; and determine whether to halt or continue the erase operation according to the first required time.

A method of controlling a memory device includes receiving a write instruction; starting a write operation to a first address in response to the write instruction; receiving a first read instruction of the first address; suspending the write operation; and applying a read voltage to a word line corresponding to the first address in a first read operation in response to the first read instruction. The method further includes resuming the write operation is after applying the read voltage; receiving a second read instruction after applying the read voltage; and outputting read data from a data register in response to the second read instruction during a period starting at resuming the write operation and ending at completion of the write operation.