Patent classifications
G11C2216/24
Partial block erase for block programming in non-volatile memory
A non-volatile memory system utilizes partial block erasing during program operations to mitigate the effects of programming pass voltage disturbances. A programming request is received that is associated with a group of word lines from a block, such as all or a portion of the word lines. The system erases and soft programs the block prior to beginning programming. The system programs a subset of the word lines of the block for the programming request. After programming the subset of word lines, the system pauses the programming operation and performs an erase operation for the unprogrammed word lines of the block. The already programmed word lines and one or more optional buffer word lines may be inhibited from erasing during the erase operation. After erasing the unprogrammed word lines, the system completes the programming request by programming the remaining user data in the unprogrammed region of the block.
Storage devices with multiple NAND dies
A memory controller includes an interface and a control module. The interface interfaces with a memory device which includes a plurality of dies that each include a plurality of blocks. The control module groups a plurality of blocks included in different dies and manages the plurality of blocks as a super block. The control module performs scheduling to alternately perform a program on a part of an Nth super block, wherein N is a natural number, and a phased erase on an N+1st super block, and the control module completes the program on the Nth super block and the erase on the Nth super block before the program on the N+1st super block starts.
APPARATUSES SYSTEMS AND METHODS FOR LINKED BANK REFRESH
A memory device includes a plurality of memory banks. The memory device receives a linked activation command along with a bank address which specifies a first one of the memory banks. While an access operation is performed on the first memory bank responsive to the linked activation command, a refresh operation is performed on a second memory bank responsive to the linked activation. The first and the second memory banks are part of a bank link group. A second linked activation command may be received a time after first linked activation command which is less than a refresh delay tRFCL as long as the second linked activation command is to a different bank link group.