An optical element for a lithographic apparatus, the optical element including an anchor layer selected to support a top layer having self-terminating growth in an operating lithographic apparatus or plasma containing environment. Also described is a method of manufacturing an optical element, the method including depositing a top layer on anchor layer via exposure to plasma, preferably electromagnetically induced plasma. Lithographic apparatuses including such optical elements are also described.

A method for producing an optical element includes: providing a substrate (102), applying a layer system (103), wherein an optically effective surface (101) is formed and wherein the layer system has a layer (104) that is thermally deformable for manipulating the geometric shape of the optically effective surface, and applying a temperature field to the optical element while at least regionally heating the thermally deformable layer to above a specified operating temperature of the optical system. The thermally deformable layer is configured such that a deformation that is induced when the temperature field is applied is at least partially maintained after the optical element has cooled. Also disclosed is an optical element (400) that has an optically effective surface (401), a substrate (402), and a layer system (403) that has a reflection layer system (406), which includes a shape-memory alloy.

A substrate with a multilayer reflective film capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The substrate with a multilayer reflective film has a multilayer reflective film obtained by alternately laminating a high refractive index layer and a low refractive index layer on a main surface of a mask blank substrate used in lithography, wherein an integrated value I of the power spectrum density (PSD) at a spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1 of the surface of the substrate with a multilayer reflective film, obtained by measuring a region measuring 3 μm×3 μm with an atomic force microscope, is not more than 180×10.sup.−3 nm.sup.3, and the maximum value of the power spectrum density (PSD) at a spatial frequency of 1 μm.sup.−1 to 10 μm.sup.−1 is not more than 50 nm.sup.4.

The invention relates to a method for determining the thickness of a contaminating layer and/or the type of a contaminating material on a surface (7) in an optical system, in particular on a surface (7) in an EUV lithography system, comprising: irradiating the surface (7) on which plasmonic nanoparticles (8a,b) are formed with measurement radiation (10), detecting the measurement radiation (10a) scattered at the plasmonic nanoparticles (8a,b), and determining the thickness of the contaminating layer and/or the type of the contaminating material on the basis of the detected measurement radiation (10a). The invention also relates to an optical element (1) for reflecting EUV radiation (4), and to an EUV lithography system.

The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.

Systems for x-ray diffraction/scattering measurements having greater x-ray flux and x-ray flux density are disclosed. These are useful for applications such as material structural analysis and crystallography. The higher flux is achieved by using designs for x-ray targets comprising a number of microstructures of one or more selected x-ray generating materials fabricated in close thermal contact with a substrate having high thermal conductivity. This allows for bombardment of the targets with higher electron density or higher energy electrons, which leads to greater x-ray flux. The high brightness/high flux source may then be coupled to an x-ray reflecting optical system, which can focus the high flux x-rays to a spots that can be as small as one micron, leading to high flux density, and used to illuminate materials for the analysis based on their scattering/diffractive effects.

A mirror, in particular for a microlithographic projection exposure apparatus has an optically effective surface (11), a mirror substrate (12), a reflection layer stack (21) for reflecting electromagnetic radiation that is incident on the optical effective surface, and at least two piezoelectric layers (16a, 16b, 16c), which are arranged successively between the mirror substrate and the reflection layer stack in the stack direction of the reflection layer stack and to which an electric field can be applied to produce a locally variable deformation, wherein at least one intermediate layer (22a, 22b) made of crystalline material is arranged between the piezoelectric layers (16a, 16b, 16c), wherein the intermediate layer is designed to leave an electric field, which is present in the region of the piezoelectric layers (16a, 16b, 16c) that adjoin the intermediate layer (22a, 22b) in the stack direction of the reflection layer stack (21), substantially uninfluenced.

A grazing incidence X-ray fluorescence spectrometer (1) of the present invention includes: a bent spectroscopic device (4) to monochromate X-rays (3) from an X-ray source (2) and generate an X-ray beam (5) focused on a fixed position (15) on a surface of a sample (S); a slit member (6) disposed between the bent spectroscopic device (4) and the sample (S) and having a linear opening (61); a slit member moving unit (7) to move the slit member (6) in a direction that intersects the X-ray beam (5) passing through the linear opening (61); a glancing angle setting unit (8) to move the slit member (6) by using the slit member moving unit (7), and set a glancing angle (α) of the X-ray beam (5) to a desired angle; and a detector (10) to measure an intensity of fluorescent X-rays (9) from the sample (S) irradiated with the X-ray beam (5).

A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

A method of manufacture of an extreme ultraviolet reflective element includes: providing a substrate; forming a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer and a second reflective layer for forming a Bragg reflector; and forming a capping layer on and over the multilayer stack, the capping layer formed from titanium oxide, ruthenium oxide, niobium oxide, ruthenium tungsten, ruthenium molybdenum, or ruthenium niobium, and the capping layer for protecting the multilayer stack by reducing oxidation and mechanical erosion.