An X-ray optics assembly for an X-ray diffractometer is provided, comprising a multilayer mirror, in particular a Goebel mirror, and a switching system with which beam paths for an X-ray beam are selectable. The X-ray optics assembly includes a monochromator, in particular a channel-cut crystal, and three beam paths for the X-ray beam are selectable using the switching system. A first beam path in a first position of the switching system leads past the multilayer mirror and leads past the monochromator, a second beam path in a second position of the switching system contains the multilayer mirror and leads past the monochromator, and a third beam path in a third position of the switching system contains the multilayer mirror and contains the monochromator. The invention provides an X-ray optics assembly and an X-ray diffractometer which may be used even more universally for various measurement geometries in a simple manner.

An X-ray generator includes: a line X-ray source; a multilayer film mirror; and a side-by-side reflecting mirror including two concave mirrors joined together so as to share a join line. A cross section of a reflecting surface of the multilayer film mirror has a parabolic shape, and a focus of the parabolic shape is located at the line X-ray source. Cross sections of reflecting surfaces of the two concave mirrors of the side-by-side reflecting mirror each have a parabolic shape, and each of focuses of the parabolic shapes is located on a side opposite to the multilayer film mirror. An extended line of the join line of the side-by-side reflecting mirror passes through the multilayer film mirror and the line X-ray source as viewed in a plan view.

A multilayer mirror for reflecting Extreme Ultraviolet (EUV) radiation and a method for producing the same are disclosed. In an embodiment a multilayer mirror includes a layer sequence having a plurality of alternating first layers and second layers, the first layers including lanthanum or a lanthanum compound and the second layers including boron, wherein the second layers are doped with carbon, and wherein a molar fraction of carbon in the second layers is 10% or less.

A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

An example method for making a reticle includes providing an assembly. The assembly includes an extreme ultraviolet mirror and a cavity overlaying at least a bottom part of the extreme ultraviolet mirror. The method also includes at least partially filling the cavity with an extreme ultraviolet absorbing structure that includes a metallic material that includes an element selected from Ni, Co, Sb, Ag, In, and Sn, by forming the extreme ultraviolet absorbing structure selectively in the cavity.

A reflective mirror is provided with a base and a multilayer film including a first layer and a second layer laminated alternately on the base and capable of reflecting at least a portion of incident light. The multilayer film is provided with a first portion having a first thickness, and with a second portion having a second thickness that is different from the first thickness, and which is provided at a position rotationally symmetric to that of the first portion about an optical axis of the reflective mirror.

A doubly bent X-ray spectroscopic device (1) according to the present invention includes: a glass plate (3) which is deformed into a shape having a doubly bent surface by being sandwiched between a doubly curved convex surface (21a) of a convex forming die (21) and a doubly curved concave surface (22a), of a concave forming die (22), that matches the doubly curved convex surface (21a), and being heated to a temperature of 400 C. to 600 C.; and a reflection coating (5) configured to reflect X-rays, which is formed on a concave surface (3a) of the deformed glass plate (3).

A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

A pellicle that includes graphene is constructed and arranged for an EUV reticle. A multilayer mirror includes graphene as an outermost layer.

A structure includes a silicon substrate having a plurality of recessed portions, each recessed portion having a bottom and a side wall, silicide layers, each silicide layer in contact with the bottoms of the plurality of recessed portions, and a metal structure including metal portions, each metal portion disposed in the plurality of recessed portions and in contact with the silicide layers. The silicide layers are electrically connected to each other through the silicon substrate.