Provided is a substrate with a multilayer reflective film, the substrate being used for manufacturing a reflective mask blank and a reflective mask each having a multilayer reflective film having a high reflectance to exposure light and a low background level during defect inspection.

A substrate with a multilayer reflective film 110 comprises a substrate 1 and a multilayer reflective film 5. The multilayer reflective film 5 is formed of a multilayer film in which a low refractive index layer and a high refractive index layer are alternately layered on the substrate 1. The multilayer reflective film 5 comprises at least one additive element selected from hydrogen (H), deuterium (D), and helium (He). The additive element in the multilayer reflective film 5 has an atomic number density of 0.006 atom/nm.sup.3 or more and 0.50 atom/nm.sup.3 or less.

In a method for producing an optical element for an EUV projection exposure apparatus, a shaping layer (22.sub.1) is applied onto a substrate (20) so as to have a surface roughness of at most 0.5 nm rms directly after the application of the shaping layer onto the substrate.

A mirror, e.g. for a microlithographic projection exposure apparatus, includes an optical effective surface, a mirror substrate, a reflection layer stack for reflecting electromagnetic radiation incident on the optical effective surface, at least one first electrode arrangement, at least one second electrode arrangement, and an actuator layer system situated between the first and the second electrode arrangements. The actuator layer system is arranged between the mirror substrate and the reflection layer stack, has a piezoelectric layer, and reacts to an electrical voltage applied between the first and the second electrode arrangements with a deformation response in a direction perpendicular to the optical effective surface. The deformation response varies locally by at least 20% in PV value for a predefined electrical voltage that is spatially constant across the piezoelectric layer.

An X-ray scattering apparatus having a sample holder for aligning and/or orienting a sample to be analyzed by X-ray scattering, a first X-ray beam delivery system having a first X-ray source and a first monochromator being arranged upstream of the sample holder for generating and directing a first X-ray beam along a beam path, a distal X-ray detector arranged downstream of the sample holder and being movable, in a motorized way, is disclosed. The first X-ray beam delivery system is configured to focus the first X-ray beam onto a focal spot near the distal X-ray detector when placed at its largest distance from the sample holder or produce a parallel beam so that the X-ray scattering apparatus has a second X-ray beam delivery system having a second X-ray source and being configured to generate and direct a divergent second X-ray beam towards the sample holder for X-ray imaging.

A method of making a mirror for use with extreme ultraviolet or x-ray radiation includes: i) providing a base substrate having a curved surface, wherein the curved surface deviates from a curvature of a target mirror surface at high spatial frequencies corresponding to spatial periods less than 2 mm; and ii) securing a first side of a thin plate to the curved surface of the base substrate to cover the curved surface, wherein the plate has a thickness thin enough to conform to the curvature of the target mirror surface and thick enough to attenuate deviations at the high spatial frequencies on a second side of the thin plate opposite the first side that are caused by the deviations on the curved surface of the base substrate. A mirror made by the method is also disclosed.

A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

An optical element (1)includes: a substrate (2), applied to the substrate (2), a multilayer system (3) which reflects EUV radiation (4), and applied to the multilayer system (3), a protective layer system (5) having an uppermost layer (5a). Nanoparticles (7) are embedded into the material of the uppermost layer (5a) of the protective layer system (5) which nanoparticles contain at least one metallic material. An EUV lithography system which includes at least one such optical element (1) designed as indicated above, and a method of forming nanoparticles (7) in the uppermost layer (5a) of the protective layer system (5) are also disclosed.

In order to improve the mechanical stability of an X-ray grating with top bridges for X-ray dark field imaging and/or X-ray phase contrast imaging, it is proposed to reduce or prevent the undesired high stress on the top bridges by a change in the manufacturing process. Specifically, it is proposed to electroplate the top bridges after the bending. In other words, the electroplating of the top bridges is performed on the bent geometry.

Disclosed herein is an x-ray interferometer for x-ray phase contrast imaging including an x-ray source, an x-ray source grating, two x-ray phase gratings, an x-ray analyzer grating and an x-ray detector. An alternative interferometer includes a periodically structured x-ray source, two x-ray phase gratings, an x-ray analyzer grating and an x-ray detector. The phase gratings are placed much closer to the x-ray detector than to the x-ray source and the image object is positioned upstream and close to the phase gratings to achieve high sensitivity and large field-of-view simultaneously.

The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.