The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

Disclosed are a thickness detection device, method and system, a storage medium and a processor. The thickness detection device includes: a detection unit, including a plurality of thickness detection chips, wherein the thickness detection chips are sequentially arranged at least in a second direction; and a common unit, arranged opposite and spaced from the detection unit in a first direction, wherein distances between at least two positions of a first surface of the common unit and the detection unit are different, the second direction is perpendicular to the first direction and a moving direction of an object to be detected, and the first surface is a surface of the common unit which is close to the measurement unit.

The present application provides a method for monitoring a gate oxide thickness: providing a device structure comprising a gate structure, a gate oxide layer under the gate structure, source and drain regions and a base region; applying a voltage ?Vdd on the gate structure so that an accumulation layer is formed between the source and drain regions, applying a small AC voltage on the basis of the gate voltage ?Vdd; grounding the source and drain regions; applying a voltage signal close to 0 potential on the base region; obtaining the capacitance Cox between the gate structure and the base region by testing; and obtaining the thickness of a gate oxide layer according to the formula Tox=?*S/Cox. This technique accurately monitors the thickness of the gate oxide layer, and avoids those errors caused by existing methods.

In a measuring device provided in a region surrounded by a focus ring and configured to measure an amount of consumption of the focus ring, the measuring device comprises: a disc-shaped base substrate; sensor electrodes provided on the base substrate; a high frequency oscillator configured to apply a high frequency signal to the sensor electrodes; and an operation unit configured to calculate measurement values indicating electrostatic capacitances of the sensor electrodes from detection values corresponding to potentials of the sensor electrodes. The operation unit calculates a representative value (average value) of the measurement values corresponding to the amount of consumption of the focus ring and derives the amount of consumption of the focus ring with reference to a table in which the amount of consumption of the focus ring is associated with the representative value (average value) of the measurement values corresponding to the amount of consumption.

Provided herein are systems, methods and apparatuses for a thickness measurement device based on a capacitive array.

A sensor device includes a detection electrode opposing an external electrode, and generating a voltage corresponding to a change in capacitance; a capacitive amplifier circuit having a first capacitor and a second capacitor, and configured to detect the voltage generated in the detection electrode, and output a detection signal obtained by amplifying the voltage generated in the detection electrode based on a capacitance ratio between the first capacitor and the second capacitor; a reset switch configured to reset the voltage of the detection electrode to a reference potential; a changeover switch configured to switch the capacitive amplifier circuit between a capacitive amplifier and a voltage follower; a second changeover switch configured to disconnect the first capacitor from the capacitive amplifier circuit; and a second reset switch configured to reset a voltage of the first capacitor to the reference potential.

A coin sensor comprising a first inductive branch with a first inductor in series with a first resistor; a second inductive branch with a second inductor in series with a second resistor, wherein the first and second inductors are arranged facing each other on both sides of a passage channel of coins to be discriminated; at least one capacitive branch with a condenser and a resistor in series; an excitation circuit with a generator and at least one pair of switches, configured to alternately feed the first inductive branch and the second inductive branch with a pattern signal with spectral energy in two or more frequencies, such that the branch of the inductor excited at any given time is arranged in a bridge configuration with at least one capacitive branch; at least one differential amplifier configured to alternately measure the voltage between the exit nodes of the excited bridge.

The present application provides a method for monitoring a gate oxide thickness: providing a device structure comprising a gate structure, a gate oxide layer under the gate structure, source and drain regions and a base region; applying a voltage ?Vdd on the gate structure so that an accumulation layer is formed between the source and drain regions, applying a small AC voltage on the basis of the gate voltage ?Vdd; grounding the source and drain regions; applying a voltage signal close to 0 potential on the base region; obtaining the capacitance Cox between the gate structure and the base region by testing; and obtaining the thickness of a gate oxide layer according to the formula Tox=?*S/Cox. This technique accurately monitors the thickness of the gate oxide layer, and avoids those errors caused by existing methods.

Methods of measuring thickness of a material using cross-capacitance. The method generally includes applying a time-varying signal to a first pad and monitoring a response of a capacitor formed by the first pad, a spaced apart second pad, and the material. The pads may be permanently affixed to the material, in spaced relation to each other. Based on the response, a capacitance of the capacitor is determined. The material may be homogenous or heterogeneous, and has dielectric properties. Because the material acts as a dielectric, the capacitance of the capacitor changes as the thickness of the material changes. Thus, the thickness of the material may be determined based on the determined capacitance. The method may be advantageously employed to measure the thickness of a vehicle tire or other material. Related apparatuses are also disclosed.

A measurement system for measuring a consumption amount of a focus ring in a plasma etching apparatus including a processing chamber, a lower electrode and the focus ring surrounding a periphery of the lower electrode, comprises a sensor substrate having a distance sensor and a measurement unit configured to measure a consumption amount of the focus ring. The measurement unit includes a transfer instruction unit, an acquisition unit and a measurement unit. The transfer instruction unit is configured to instruct a transfer unit to transfer the sensor substrate into the processing chamber. The acquisition unit is configured to acquire information on a physical amount corresponding to a distance from the distance sensor to the focus ring, which is measured by the distance sensor. The measurement unit is configured to measure a consumption amount of the focus ring based on the acquired information on the physical amount.