A system includes an inspection robot having an input sensor comprising a laser profiler and a plurality of wheels structured to engage a curved portion of an inspection surface, wherein the laser profiler is configured to provide laser profiler data of the inspection surface; a controller, comprising: a profiler data circuit structured to interpret the laser profiler data; determine a feature of interest is present at a location of the inspection surface in response to the laser profiler data; and wherein the feature of interest comprises a shape description of the inspection surface at the location of the feature of interest.

The invention relates to a method for determining the thickness of a contaminating layer and/or the type of a contaminating material on a surface (7) in an optical system, in particular on a surface (7) in an EUV lithography system, comprising: irradiating the surface (7) on which plasmonic nanoparticles (8a,b) are formed with measurement radiation (10), detecting the measurement radiation (10a) scattered at the plasmonic nanoparticles (8a,b), and determining the thickness of the contaminating layer and/or the type of the contaminating material on the basis of the detected measurement radiation (10a). The invention also relates to an optical element (1) for reflecting EUV radiation (4), and to an EUV lithography system.

A method for verifying semiconductor wafers includes receiving a semiconductor wafer including a plurality of layers. A first set of measurement data is obtained for at least one layer of the plurality of layers, where the first set of measurement data includes at least one previously recorded thickness measurement for one or more portions of the at least one layer. The first set of measurement data is compared to a second set of measurement data for the at least one layer. The second set of measurement data includes at least one new thickness measurement for the one or more portions of the at least one layer. The semiconductor wafer is determined to be an authentic wafer based on the second set of measurement data corresponding to the first set of measurement data, otherwise the semiconductor is determined to not be an authentic wafer.

The present invention provides a detection device and a detection method. The detection device comprises a light source module, a receiving module, an image generation module and a judgment module. The light source module is configured to emit light towards a film at a predetermined angle, the receiving module is configured to receive interference light formed by first reflected light reflected by an upper surface of the film and second reflected light reflected by a lower surface of the film, the image generation module is configured to generate an equal thickness interference fringe image according to the interference light, and the judgment module is configured to judge whether thickness of the film is uniform according to the equal thickness interference fringe image. The detection device can perform high accuracy detection on uniformity of the thickness of a film, thereby facilitating improving display quality of a display panel.

A self-controlling feedback method for operating at least one coating installation for producing layer systems, a method for producing a layer system in at least one coating installation, a method for running in a coating process in at least one coating installation for producing a layer system, a coating system for producing a layer system, a coating installation for producing a layer system, a system of coating installations for producing layer systems, a database for storing installation datasets, a computer program product for a method for operating at least one coating installation, and a data processing system for executing a data processing program are disclosed.

A device measures a frictional force and a film thickness of a lubricating oil film in different surface velocity directions. The device includes an experiment bench. A translation stage is mounted to the experiment bench, and is linearly movable. A main shaft system is mounted to the experiment bench. A glass disc is mounted to the main shaft system and is rotatable. An arcuate guide rail is disposed on the translation stage. A rotary base is mounted to the arcuate guide rail and is movable along the arcuate guide rail. A loading system is mounted to the rotary base. A steel ball of the loading system and the glass disc are movable relative to each other. A rotary bearing in the rotary base is configured to convert a frictional force generated from the relative movement to a pressure allowed to be collected by a pressure sensor on the rotary base.

An arrangement of a thermal device and a surface reflecting and/or scattering electromagnetic radiation in the inner part of the thermal device. A source of electromagnetic radiation is arranged at a first distance (L1) from the surface, and a detector of electromagnetic radiation is arranged at a second distance (L2) from the surface. The source is configured to emit radiation to the surface, which is reflected and/or scattered from the surface as reflected radiation. The detector receives reflected radiation; and the processing unit determines data dependent on the first and/or second distance by the emitted and reflected radiation. A wall of the thermal device has a window or aperture for emitting an optical signal from the light source to the surface. An electromagnetic distance measurement device measures the thickness or the increase in the thickness of a contamination layer from a thermal device.

Methods and systems for simultaneous detection and linked processing of field signals and pupil signals are presented herein. In one aspect, estimates of one or more structural or process parameter values are based on field measurement signals, pupil measurement signals, or both. In addition, the quality of the measurements of the one or more structural or process parameter values is characterized based on the field measurement signals, pupil measurement signals, or both. In some embodiments, field measurement signals are processed to estimate one or more structural or process parameter values, and pupil measurement signals are processed to characterize the field measurement conditions. In some other embodiments, pupil measurement signals are processed to estimate one or more structural or process parameter values, and field measurement signals are processed to characterize the pupil measurement conditions.

A system includes an inspection robot for performing an inspection on an inspection surface with an inspection robot, the apparatus comprising a position definition circuit structured to determine an inspection robot position on the inspection surface; a data positioning circuit structured to interpret inspection data, and to correlate the inspection data to the inspection robot position on the inspection surface; and wherein the data positioning circuit is further structured to determine position informed inspection data in response to the correlating of the inspection data with the inspection robot position, wherein the position informed inspection data comprises absolute position data.

The invention relates to apparatus for monitoring an extruded product moving in an inline extrusion process so as to effect quality control of the process by continuously measuring dimensional parameters and determining the existence of contaminants in the extrusion. The apparatus makes use of Terahertz radiation which is adapted to provide a curtain of parallel rays of the radiation which is scanned across the product as the product passes therethrough in a linear manner. The composition of the emitted radiation received after the scanning process is subject to an imaging analysis to determine the dimensional parameters of the moving products. The imaging analysis involves applying correction values to the measured transit times of the rays crossing the products which depends on its position within the curtain of rays thereby to remove inaccuracies in the final measurement results.