An optical device includes a metamaterial layer configured to absorb a portion of an incident light having a frequency spectrum, the portion of the incident light having a frequency range that is narrower than and within the frequency spectrum of the incident light, a photodiode disposed in a layer coupled to the metamaterial layer and configured to detect an amplitude of the portion of the incident light, and shallow trench isolation (STI) structures disposed between the metamaterial layer and the photodiode, the STI structures configured to pass the portion of the incident light within the frequency range from the metamaterial layer to the photodiode.

A detecting device of the present disclosure includes a light emitting portion that emits light and a light receiving portion including an angle limiting member that limits an angle of incidence of light from the light emitting portion, wherein the light receiving portion has a first light receiving region and a second light receiving region that is spaced further from the light emitting portion than the first light receiving region is, the angle limiting member includes a first limiting region corresponding to the first light receiving region and a second limiting region corresponding to the second light receiving region, and the degree of angle limitation of the second limiting region is smaller than the degree of angle limitation of the first limiting region.

A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode that are stacked in order, and the electric charge accumulation electrode is disposed to be separated from the first electrode and be opposed to the first photoelectric conversion layer with an insulating layer interposed therebetween.

An optical sensor package includes an IC die including a light sensor element, an output node, and bond pads including a bond pad coupled to the output node. A leadframe includes a plurality of leads or lead terminals, wherein at least some of the plurality of leads or lead terminals are coupled to the bond pads including to the bond pad coupled to the output node. A mold compound provides encapsulation for the optical sensor package including for the light sensor element. The mold compound includes a polymer-base material having filler particles including at least one of infrared or terahertz transparent particle composition provided in a sufficient concentration so that the mold compound is optically transparent for providing an optical transparency of at least 50% for a minimum mold thickness of 500 μm in a portion of at least one of an infrared frequency range and a terahertz frequency range.

An optical system and a method of manufacturing an optical system are provided. The optical system includes a carrier, a light emitter, a light receiver, a block structure and an encapsulant. The light emitter is disposed on the carrier. The light receiver is disposed on the carrier and physically spaced apart from the light emitter. The light receiver has a light detecting area. The block structure is disposed on the carrier. The encapsulant is disposed on the carrier and covers the light emitter, the light receiver and the block structure. The encapsulant has a recess over the block structure.

A display device comprising: a substrate having a display region; a plurality of temperature detection wires arranged at positions overlapping with the display region in plan view; and a light detection electrode overlapping with temperature detection regions of the temperature detection wires in plan view.

Examples described herein relate to an optical system. In some examples, the optical system may include a light-conducting medium and a first optical device to transmit an optical signal over the light-conducting medium. Further, the optical system may include a second optical device coupled to the light-conducting medium to receive an optical signal transmitted by the first optical device. In some examples, at least one of the first optical device, the light-conducting medium, and the second optical device may include an in-situ capacitive structure to detect light intensity. Moreover, the optical system may include a monitoring circuit electrically coupled to the in-situ capacitive structure to generate an electrical signal indicative of the light intensity detected by the in-situ capacitive structure.

An optical system and a method of manufacturing an optical system are provided. The optical system includes a carrier, a light emitter, a light receiver, a block structure and an encapsulant. The light emitter is disposed on the carrier. The light receiver is disposed on the carrier and physically spaced apart from the light emitter. The light receiver has a light detecting area. The block structure is disposed on the carrier. The encapsulant is disposed on the carrier and covers the light emitter, the light receiver and the block structure. The encapsulant has a recess over the block structure.

A device including a plurality of epitaxial chips is disclosed. An epitaxial chip can have one or more of a light source and a detector, where the detector can be configured to measure the optical properties of the light emitted by a light source. In some examples, one or more epitaxial chips can have one or more optical properties that differ from other epitaxial chips. The epitaxial chips can be dependently operable. For example, the detector located on one epitaxial chip can be configured for measuring the optical properties of light emitted by a light source located on another epitaxial chip by way of one or more optical signals. The collection of epitaxial chips can also allow detection of a plurality of laser outputs, where two or more epitaxial chips can have different material and/or optical properties.

The optical sensor package comprises an optical sensor device with a sensor element arranged inside a housing comprising a cap. A diffuser is arranged in an aperture of the cap opposite the sensor element and prolongs the cap in the aperture or closes the aperture. The method comprises forming a cap with an aperture, arranging a diffusing material in the aperture, thus forming a diffuser, and after forming the diffuser, arranging an optical sensor device with a sensor element inside a housing that includes the cap, such that the sensor element is opposite the diffuser.