A light sensor module includes a substrate. A first detection region is provided on the substrate. At least one photosensitive device is provided inside the first detection region. The at least one photosensitive device is adapted to collecting first light sensor data from the first detection region under current incident light. The first light sensor data are used for determining whether light sensor data collected by the light sensor module under the current incident light are to be compensated.

A sensor is provided. A first terminal of a first current source and a first terminal of a first transistor are connected to a cathode of the photodiode. A control terminal of a second transistor is connected to an output terminal of a first operational amplifier. A first terminal of the second transistor is connected to a second terminal of the first transistor through a first current mirror circuit. A second terminal of the second transistor is connected to a second current source, a second input terminal of a second operational amplifier and a first terminal of a third transistor. A first input terminal of the second operational amplifier is connected to the first terminal of the first transistor. A control terminal of the third transistor is connected to an output terminal of the second operational amplifier.

Embodiments of the present disclosure provide a detection circuit for a laser fault injection attack on a chip and a security chip. The detection circuit includes a first capacitor, a second capacitor, a first switch, a second switch, a photosensitive element, a first NMOS transistor, and a second NMOS transistor. A drain of the first NMOS transistor is configured to output a first voltage signal, and a drain of the second NMOS transistor is configured to output a second voltage signal. The first voltage signal and the second voltage signal are configured to indicate that the chip is attacked by laser fault injection, thereby realizing detection of the laser fault injection attack, and ensuring the robustness and security of the chips.

Embodiments of the present disclosure provide a detection circuit for a laser fault injection attack on a chip and a security chip. The detection circuit includes a first capacitor, a second capacitor, a first switch, a second switch, a photosensitive element, a first NMOS transistor, and a second NMOS transistor. A drain of the first NMOS transistor is configured to output a first voltage signal, and a drain of the second NMOS transistor is configured to output a second voltage signal. The first voltage signal and the second voltage signal are configured to indicate that the chip is attacked by laser fault injection, thereby realizing detection of the laser fault injection attack, and ensuring the robustness and security of the chips.

A method of measuring light intensity comprising exposing a photodiode to light to cause the photodiode to provide a current of a first polarity, supplying said current to an integrator to integrate said current to provide an integrated output voltage, and comparing the output voltage with a threshold voltage. Charge packages of opposite polarity are applied to said first polarity to reset the integration voltage prior to the start of the integration time. At the end of the integration time, the photodiode is disconnected from said integrator and a reference voltage coupled to the integrator input, whilst a resistance is coupled into the circuit until the comparison signal switches. The comparison signal is monitored to measure a time between the end of the integration time and the switching of the comparison signal to provide a measure of a residual voltage.

This application provides a single-photon detection apparatus that includes a phase-reversed reflection branch, a single-photon sensing device, a phase-unreversed reflection branch. An input signal is divided into a first and a second input signals, and the two input signals respectively arrive at the phase-reversed reflection branch and the single-photon sensing device. The phase-reversed reflection branch is configured to perform phase-reversed reflection processing on the first input signal, to obtain a phase-reversed signal. The single-photon sensing device is configured to send the second input signal to the phase-unreversed reflection branch, and is further configured to sense a photon, generate photon information, and output a first branch signal. The phase-unreversed reflection branch is configured to perform phase-unreversed reflection processing on the second input signal to obtain a second branch signal. The first branch signal is superimposed with the second branch signal, to obtain the photon information.

This application provides a single-photon detection apparatus that includes a phase-reversed reflection branch, a single-photon sensing device, a phase-unreversed reflection branch. An input signal is divided into a first and a second input signals, and the two input signals respectively arrive at the phase-reversed reflection branch and the single-photon sensing device. The phase-reversed reflection branch is configured to perform phase-reversed reflection processing on the first input signal, to obtain a phase-reversed signal. The single-photon sensing device is configured to send the second input signal to the phase-unreversed reflection branch, and is further configured to sense a photon, generate photon information, and output a first branch signal. The phase-unreversed reflection branch is configured to perform phase-unreversed reflection processing on the second input signal to obtain a second branch signal. The first branch signal is superimposed with the second branch signal, to obtain the photon information.

A light receiver (50) is provided having a plurality of avalanche photodiode elements (10) that are each biased by a bias above a breakdown voltage and that are thus operated in a Geiger mode to trigger a Geiger current on light reception, wherein the avalanche photodiode elements (10) have a first connector (20, 22, 28a-b) and a second connector (20, 22, 28a-b); and wherein a first signal tapping circuit (12) for reading out the avalanche photodiode elements is connected to one of the connectors (20, 22, 28a-b). In this respect, a second signal tapping circuit (12) for reading out the avalanche photodiode elements (10) is connected to the other connector (20, 22, 28a-b).

A light receiver (50) is provided having a plurality of avalanche photodiode elements (10) that are each biased by a bias above a breakdown voltage and that are thus operated in a Geiger mode to trigger a Geiger current on light reception, wherein the avalanche photodiode elements (10) have a first connector (20, 22, 28a-b) and a second connector (20, 22, 28a-b); and wherein a first signal tapping circuit (12) for reading out the avalanche photodiode elements is connected to one of the connectors (20, 22, 28a-b). In this respect, a second signal tapping circuit (12) for reading out the avalanche photodiode elements (10) is connected to the other connector (20, 22, 28a-b).

A device, for pixel transfer rate boosting, is provided and includes an image sensing array having a plurality of pixel units, in which each of the plurality of pixel units is configured to generate a pixel signal when receiving an electromagnetic energy, a signal buffer circuit, electrically coupled with the image sensing array to receive the pixel signals, a switch circuit electrically coupled with the signal buffer circuit, a capacitor having a first terminal and a second terminal, in which the first terminal electrically couples with the switch circuit and the second terminal connects to a ground, a comparator, electrically coupled with the switch circuit, and a pull-down unit, electrically coupled with the first terminal of the capacitor and the switch circuit. After the switch circuit is turned on, the pull-down unit pulls the plurality of pixel output signals down.