Manufacturing opto-electronic modules (1) includes providing a substrate wafer (PW) on which detecting members (D) are arranged; providing a spacer wafer (SW); providing an optics wafer (OW), the optics wafer comprising transparent portions (t) transparent for light generally detectable by the detecting members and at least one blocking portion (b) for substantially attenuating or blocking incident light generally detectable by the detecting members; and preparing a wafer stack (2) in which the spacer wafer (SW) is arranged between the substrate wafer (PW) and the optics wafer (OW) such that the detecting members (D) are arranged between the substrate wafer and the optics wafer. Emission members (E) for emitting light generally detectable by the detecting members (D) can be arranged on the substrate wafer (PW). Single modules (1) can be obtained by separating the wafer stack (2) into separate modules.

Manufacturing opto-electronic modules (1) includes providing a substrate wafer (PW) on which detecting members (D) are arranged; providing a spacer wafer (SW); providing an optics wafer (OW), the optics wafer comprising transparent portions (t) transparent for light generally detectable by the detecting members and at least one blocking portion (b) for substantially attenuating or blocking incident light generally detectable by the detecting members; and preparing a wafer stack (2) in which the spacer wafer (SW) is arranged between the substrate wafer (PW) and the optics wafer (OW) such that the detecting members (D) are arranged between the substrate wafer and the optics wafer. Emission members (E) for emitting light generally detectable by the detecting members (D) can be arranged on the substrate wafer (PW). Single modules (1) can be obtained by separating the wafer stack (2) into separate modules.

A sensor device, a sensor package, and method for fabricating a sensor device are described that include an integrated light blocker disposed on the thermopile device and a lens configured to direct light to the thermopile device. In an implementation, the thermopile device includes a substrate; a thermopile membrane disposed on the substrate, the thermopile membrane including at least one passivation layer; a thermopile disposed within the thermopile membrane, the thermopile including at least one thermocouple; and a light blocking layer disposed proximate to the thermopile membrane, the light blocking layer including an aperture disposed proximate to the thermopile.

We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.

A fluid sensor includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a thermal radiation detector on the top main surface region of the support structure; and a waveguide structure having a first and a second waveguide section on the top main surface region of the support structure. The first waveguide section guides a first portion of the thermal radiation to the thermal radiation detector and the second waveguide section guides a second portion of the thermal radiation to the thermal radiation detector. The waveguide structure enables an interaction of an evanescence field of the guided first and/or second portion of the thermal radiation with a surrounding fluid.

The integrated imaging device comprises a substrate (1) with an integrated circuit (4), a cover (2), a cavity (6) enclosed between the substrate (1) and the cover (2), and a sensor (5) or an array of sensors (5) arranged in the cavity (6). A surface (11, 12) of the substrate (1) or the cover (2) opposite the cavity (6) has a structure (8) directing incident radiation. The surface structure (8) may be a plate zone or a Fresnel lens focusing infrared radiation and may be etched into the surface of the substrate or cover, respectively.

An imaging device is specified, the imaging device including a detector array a plurality of pixels, the pixels including a plurality of subpixel types, a micromirror array with a plurality of mirror elements, and an internal light source, wherein at least one of the subpixel types is configured to detect a first radiation; the mirror elements are configured to deflect in response to a second radiation, the internal light source is configured to illuminate the detector array with a third radiation; at least one of the subpixel types is configured to detect the third radiation deflected by the micromirror array. Furthermore, a method of multi-spectral imaging is specified.

An optical sensor element for sensing thermal radiation comprises a light emitter having a cavity, the light emitter being configured to emit coherent electromagnetic radiation through an emission surface and to undergo self-mixing interference, SMI, caused by reflected electromagnetic radiation reinjected into the cavity. A micro-opto-mechanical transducer is arranged distant from the emission surface, the transducer being configured to undergo mechanical deflection according to thermal radiation absorbed by the transducer, and to reflect the electromagnetic radiation emitted by the light emitter back into the cavity for generating the SMI. A detection unit is configured to detect a degree of the generated SMI, determine from the detected degree a deflection of the transducer, and generate an output signal indicating the determined

A light sensor includes a vibration actuator configured to generate vibration on the basis of an input signal, a resonator having a doubly-clamped beam formed in a MEMS structure using a silicon material, configured to vibrate on the basis of the vibration transmitted by the vibration actuator and having a resonant frequency that changes in response to input of light, and a vibration detector configured to detect vibration of the doubly-clamped beam.