An SMD-enabled infrared thermopile sensor has at least one miniaturized thermopile pixel on a monolithically integrated sensor chip accommodated in a hermetically sealed housing which consists of an at least partially non-metallic housing substrate and a housing cover. A gas or a gas mixture is contained in the housing. The sensor has a particularly low overall height, in particular in the z direction. This is achieved by virtue of an aperture opening being introduced in the housing cover opposite the thermopile pixel(s), which aperture opening is closed with a focusing lens which focuses the radiation from objects onto the thermopile pixel(s) on the housing substrate, and by virtue of a signal processing unit being integrated on the same sensor chip next to the thermopile pixels, wherein the total housing height and the housing cover are at most 3 mm or less than 2.5 mm.

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.

A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution Δd/d of 0.0055 or more.

A graphene-based broadband radiation sensor and methods for operation thereof are disclosed. The radiation sensor includes an electrical signal path for carrying electrical signals and one or more resonance structures connected to the electrical signal path. Each resonance structure includes a resonator having a resonant frequency. Each resonance structure also includes a graphene junction connected in series with the resonator, the graphene junction including a graphene layer and having an impedance that is dependent on a temperature of the graphene layer. Each resonance structure further includes a heating element that is thermally coupled to the graphene layer and is configured to receive an incident photon, where the temperature of the graphene layer increases in response to the heating element receiving the incident photon.

A detector of electromagnetic radiation (RL) is described. The detector comprises: an oriented polycrystalline layer (2) of thermoelectric material, a substrate (1) superimposed on the top surface of the oriented polycrystalline layer so that the back surface (10) is in contact with the oriented polycrystalline layer, first and second electrodes spaced the one from the other and in electrical contact with the oriented polycrystalline layer. The substrate comprises at least one ceramic layer and the oriented polycrystalline layer has a crystal orientation at an angle comprised between 30 degrees and 55 degrees relative to a normal to the top surface of the substrate.

Embodiments relate generally to electromagnetic radiation detector devices, systems, and methods using a planar Golay cell. A method for gas detection may comprise providing a gas sealed in a cavity of a gas detector; directing radiative power from a light source through one or more target gases and through a cell body of the gas detector toward the cavity and a wavelength selective absorber of the gas detector, wherein the one or more target gases are located between the light source and the cavity; setting wavelength sensitivity with the wavelength selective absorber, wherein the wavelength sensitivity is irrespective of an angle of incidence (?); absorbing the radiative power by the wavelength selective absorber and by the one or more target gases; detecting, by a pressure sensing element, a pressure change caused by the absorbing of the radiative power; and determining the one or more target gases based on the detected pressure change.

An imaging device includes a plurality of temperature detection element units and a plurality of infrared absorption layer units arranged along a first direction and a second direction, in which: each of the temperature detection element units includes a first temperature detection element 21 and a second temperature detection element 22 adjacent to each other along the first direction; each of the infrared absorption layer units includes a first infrared absorption layer 41 and a second infrared absorption layer 42 adjacent to each other along the second direction; the first infrared absorption layer 41 is arranged above a first A region 21.sub.1 and a second A region 22.sub.1 and is thermally connected to the first temperature detection element 21; and the second infrared absorption layer 42 is arranged above a first B region 21.sub.2 and a second B region 22.sub.2 and is thermally connected to the second temperature detection element 22.

Provided are a terahertz wave detection device and a terahertz wave detection system to execute checking at high speed with high sensitivity and accuracy and to execute omnidirectional inspection without requiring a large checking system. A flexible array sensor (30) includes: a terahertz wave detection element (10) having a flexible single-walled carbon nanotube film (11), and a first electrode (12) and a second electrode (13) disposed to face each other on a two-dimensional plane of the single-walled carbon nanotube film (11); and a flexible substrate (20) having flexibility to support the terahertz wave detection element (10) so as to be freely curved. The flexible substrate (20) is preferably formed in a curved or cylindrical shape, so that the terahertz wave detection elements (10) are arrayed on the flexible substrate 20 formed in a curved or cylindrical shape.

Provided is an infrared absorptive material having a high refractive index layer that has a refractive index of 3.0 or higher for infrared light at any wavelength in the wavelength range of 2 μm to 50 μm and has a thickness of 8 nm to 15,000 nm; and a reflective layer positioned on one face of the high refractive index layer.

Substrates that can act as optical elements for transmitting infrared light and that have low reflectance for infrared light and the assembly of such substrates with a source of infrared light and/or with an infrared-sensitive optical component. The substrates are suitable for cover glasses and optical elements, such as lenses, prisms, or mirrors to be used with infrared light. Ions are implanted into a substrate in order to reduce its reflectance of infrared light.