Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.

Systems, methods, and apparatuses for providing on-board electromagnetic radiation sensing using beam splitting in a radiation sensing apparatus. The radiation sensing apparatuses can include a micro-mirror chip including a plurality of light reflecting surfaces. The apparatuses can also include an image sensor including an imaging surface. The apparatuses can also include a beamsplitter unit located between the micro-mirror chip and the image sensor. The beamsplitter unit can include a beamsplitter that includes a partially-reflective surface that is oblique to the imaging surface and the micro-mirror chip. The apparatuses can also include an enclosure configured to enclose at least the beamsplitter and a light source. With the apparatuses, the light source can be attached to a printed circuit board (PCB). Also, the enclosure can include an inner surface that has an angled reflective surface that is configured to reflect light from the light source in a direction towards the beamsplitter.

An infrared sensor according to the present disclosure includes base substrate, infrared receiver, and beam. The beam includes connective portion connecting with the base substrate and/or a member on the base substrate, and separated portion separated from the base substrate. The infrared receiver and the beam are joined with each other at the separated portion. The infrared receiver is supported by the beam in a state where the infrared receiver is separated from the base substrate. The beam includes junction part joined to the infrared receiver, and section positioned between junction part and the connective portion, and section includes a phononic crystal structure defined by a plurality of through holes orderly arranged. The crystal structure includes a first domain and a second domain that are phononic crystal domains. The first domain includes, in a plan view, a plurality of through holes arranged orderly in a first direction, while the second domain includes, in a plan view, a plurality of through holes arranged orderly in a second direction that is different from the first direction. The infrared sensor according to the present disclosure has enhanced responsivity.

A photodiode comprising a photoactive spinel oxide layer is described. This photoactive spinel oxide layer forms a contact with both a light absorption layer of quantum dots, quantum wires, or quantum rods, and an inorganic substrate layer. In some embodiments, the inorganic substrate layer and the photoactive spinel oxide layer form an isotype junction. Methods of characterizing the photodiode are provided and demonstrate commercially relevant electrical and optoelectronic properties, particularly the ability to operate as a photodetector with a high photosensitivity. An economical process for preparing the photodiode is provided as well as applications.

Systems, methods, and apparatuses having an array of micro mirrors that rotate according to absorbed radiation and reflect light to generate light spots. In a first setting, a processor obtains an image of the light spots, determines positions of the light spots using a computationally efficient but less accurate method to calculate the intensities of radiation directed at the micro mirrors, and provides the calculated radiation. In a second setting, the processor does not determines the position; and the image is transmitted to a separate computing device to determine positions of the light spots using a computationally intensive but more accurate method to calculate the intensities of radiation directed at the micro mirrors. The system can dynamically switch between the first setting and second setting without a need to adjust hardware.

A decoupling radiant and convective heat sensing device having sensor elements facing in different directions, and a decoupling radiant and convective heat sensing device having sensor elements facing in different directions with a means for determining the remaining time before a Self Contained Breathing Apparatus facemask will become compromised by dangerous heat conditions.

A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively. The sensor comprises a rectangular membrane created in a silicon substrate which has a thin polysilicon layer and a thin residual thermal reorganized porous silicon layer both attached on its back side, and configured to have its three sides clamped to the frame formed in the silicon substrate which surrounds and supports the membrane and the other side free to the frame, a cavity created in the silicon substrate, positioned under the membrane and having its flat bottom opposite to the membrane, its three side walls shaped as curved planes and the other side wall shaped as a vertical plane, a heater or an infrared absorber positioned on the membrane, close to and parallel with the free side of the membrane and a thermopile positioned on the membrane and consists of several thermocouples connected in series and having its hot junctions close to the heater and its cold junctions extended to the frame.

Embodiments of the present disclosure provide a thermoelectric laser power probe, including a heat dissipation housing and a laser power probing unit fixed inside the heat dissipation housing. The heat dissipation housing is provided with a light inlet. The laser power probing unit includes a substrate. The substrate includes a top surface and at least two outer side surfaces. The top surface is provided with an absorbent material layer. The absorbent material layer corresponds to the light inlet. The at least two outer side surfaces are symmetrically arranged about a center line of a cross section of the top surface, each of the outer side surfaces is perpendicular to the top surface or a tangent plane of the top surface, and each of the outer side surfaces is sequentially provided with an insulating layer and a thin-film thermopile.

Techniques are disclosed for facilitating image relay for wearable devices with thermal imaging devices attached thereto. In one example, a system includes an attachment configured to releasably couple to an exterior surface of a wearable apparatus. The attachment includes an infrared sensor assembly configured to capture a thermal image of a scene. The attachment further includes a display component configured to provide data indicative of the thermal image. The system further includes an optical relay component configured to couple to an interior surface of the wearable apparatus. The optical relay component is further configured to receive the data from the display component and relay the data within the wearable apparatus to facilitate presenting the data for viewing by a user while wearing the wearable apparatus. Related devices and methods are also provided.

An infrared photodetector includes: a p-type and highly-doped silicon substrate; a metal structure disposed on the silicon substrate; a first electric contact to the silicon substrate; and a second electric contact to the metal structure.