A method and corresponding system is disclosed in which the overall illuminance of an environment is analyzed to in order to detect and quantify the daylight component of the illuminance. The invention utilizes a combination of visual and non-visual sensors and a signal processing algorithm that filters and analyzes the sensor data.

Embodiments of the present disclosure provide a thermoelectric laser power probe, including a heat dissipation housing and a laser power probing unit fixed inside the heat dissipation housing. The heat dissipation housing is provided with a light inlet. The laser power probing unit includes a substrate. The substrate includes a top surface and at least two outer side surfaces. The top surface is provided with an absorbent material layer. The absorbent material layer corresponds to the light inlet. The at least two outer side surfaces are symmetrically arranged about a center line of a cross section of the top surface, each of the outer side surfaces is perpendicular to the top surface or a tangent plane of the top surface, and each of the outer side surfaces is sequentially provided with an insulating layer and a thin-film thermopile.

A thermopile infrared individual sensor includes a housing filled with a gaseous medium. It has optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, infrared-sensitive regions of which are each spanned by at least one beam over a cavity in a carrier body. The thermopile infrared sensor uses monolithic Si-micromechanics technology for contactless temperature measurements. In the case of a sufficiently large receiver surface, this outputs a high signal with a high response speed. A plurality of individual adjacent sensor cells are combined with respectively one infrared-sensitive region with thermopile structures on the membrane on a common carrier body of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap sealed with a base plate with a common gaseous medium.

An infrared sensor substrate includes: column signal lines; row signal lines; a pixel array of pixels including infrared detector elements connected to the column signal lines and the row signal lines. The infrared sensor substrate includes: a current source connected to the infrared detector elements via the column signal lines; a voltage source that applies a voltage to the infrared detector elements via the row signal lines; output terminals connected to the column signal lines, the output terminals being connectable to a signal processing circuit substrate that processes output signals of the infrared detector elements. The infrared sensor substrate includes a monitoring terminal capable of monitoring the voltage applied to the infrared detector elements by the first voltage source.

The invention relates to a thermopile infrared individual sensor in a housing that is filled with a gaseous medium having optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, the infrared-sensitive regions of which are spanned by, in each case, at least one beam over a cavity in a carrier body with good thermal conduction. The object of the invention consists of specifying a thermopile infrared sensor using monolithic Si-micromechanics technology for contactless temperature measurements, which, in the case of a sufficiently large receiver surface, outputs a high signal with a high response speed and which can operated in a gaseous medium with normal pressure or reduced pressure and which is producible in mass produced numbers without complicated technology for sealing the housing. This is achieved by virtue of, in each case, combining a plurality of individual adjacent sensor cells (18) with respectively one infrared-sensitive region with thermopile structures (14, 15) on the membrane (12) on a common carrier body (1) of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap (12) sealed with a base plate (3) with a common gaseous medium (10).

A thermal infrared sensor array in a wafer-level package includes at least one infrared-sensitive pixel produced using silicon micro mechanics, comprising a heat-isolating cavity in a silicon substrate surrounded by a silicon edge, and a thin membrane connected to the silicone edge by of thin beams. The cavity extends through the silicon substrate to the membrane, and there are slots between the membrane, the beams and the silicon edge. A plurality of infrared-sensitive individual pixels are arranged in lines or arrays and are designed in a CMOS stack in a dielectric layer, forming the membrane, and are arranged between at least one cover wafer which is designed in the form of a cap and has a cavity and a base wafer. The cover wafer, the silicon substrate and the base wafer are connected to one another in a vacuum-tight manner and enclosing a gas vacuum.

There is provided an auto detection system including a thermal detection device and a host. The host controls an indication device to indicate a prompt message or detection results according to a slope variation of voltage values or 2D distribution of temperature values detected by the thermal detection device, wherein the voltage values include the detected voltage of a single pixel or the sum of detected voltages of multiple pixels of a thermal sensor.

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.

A far infrared sensor package includes a package body and a plurality of far infrared sensor array integrated circuits. The plurality of far infrared sensor array integrated circuits are disposed on a same plane and inside the package body. Each of the far infrared sensor array integrated circuits includes a far infrared sensing element array of a same size.

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.