A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.

An example objective of the present invention is to provide a bolometer capable of reducing its manufacturing cost. A bolometer according to an example aspect of the present invention includes: a substrate; and an infrared detection unit comprising a bolometer film, wherein the infrared detection unit is held on the substrate with a gap therebetween by a supporting unit, wherein the bolometer film is a carbon nanotube film includes semiconducting carbon nanotubes in an amount of 67% by mass or more of the total amount of carbon nanotubes, and the thickness of the carbon nanotube film is in the range of 10 nm to 1 μm, and the density of the carbon nanotube film is 0.3 g/cm.sup.3 or more.

A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.

We disclose herein a thermal IR detector array device comprising a dielectric membrane, supported by a substrate, the membrane having an array of IR detectors, where the array size is at least 3 by 3 or larger, and there are tracks embedded within the membrane layers to separate each element of the array, the tracks also acting as heatsinks and/or cold junction regions.

We disclose an array of Infra-Red (IR) detectors comprising at least one dielectric membrane formed on a semiconductor substrate comprising an etched portion; at least two IR detectors, and at least one patterned layer formed within or on one or both sides of the said dielectric membrane for controlling the IR absorption of at least one of the IR detectors. The patterned layer comprises laterally spaced structures.

According to one aspect, the invention relates to an angular optical filtering element (E.sub.i) optimized for angular filtering about a given operating angle of incidence (θ.sub.i, 1) in a given spectral band. The angular filtering element (E.sub.i) comprises a first nanostructured, band-pass, spectral filter (11.sub.i, 301) and a second nanostructured, band-pass, spectral filter (12.sub.i, 302). Each of the first and second spectral filters comprises, respectively, in said spectral band, a first and a second central filtering wavelength that respectively has a first and second angular dispersion curve defined depending on the angle of incidence (θ.sub.inc) on the optical filtering element (E.sub.i), the curves of angular dispersion being secant about the operating angle of incidence (θ.sub.i, 1) of the optical filtering element. The invention applies to the production of a selective angular filtering device and to a multidirectional optical detection system.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

The present disclosure relates to a microbolometer comprising an array of pixels, each pixel comprising one or more detection cells, each detection cell comprising an absorption layer (530), wherein: the pitch of the detection cells in at least one direction in the plane of pixel array is between 5 and 11 μm; a pixel fill factor FF of the absorption layer (530) of the one or more detection cells in each pixel is in a range 0.10 to 0.50; and a sheet resistance Rs of the absorption layer (530) of each detection cell is between 16 and 189 ohm/sq.

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a microbolometer array. The microbolometer array includes a plurality of microbolometers. Each microbolometer includes a microbolometer bridge that includes a first portion and a second portion. The first portion includes a resistive layer configured to capture infrared radiation. The second portion includes a second portion having a plurality of perforations defined therein.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.