A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

External biasing control unit for a reading circuit of an infrared photodetector element, the control unit being able to adopt: a first configuration wherein it sends a first set of biasing signals to a first stage of the reading circuit so that this first stage adopts a first operating mode corresponding to a first biasing mode of the photodetector, in particular a direct injection mode, a second configuration wherein it sends a second set of biasing signals to said first stage, the signals in the second set being designed so that said first stage adopts a second operating mode corresponding to a second biasing mode of the photodetector, in particular a buffer direct injection mode.

A system for detecting microwave power. In some embodiments, the system includes: a first resonator including a graphene-insulating-superconducting junction; a probe signal source, coupled to the first resonator; and a probe signal analyzer. The probe signal analyzer is configured: to measure a change in amplitude or phase of a probe signal received by the probe signal analyzer from the probe signal source, and to infer, from the change in amplitude or phase, a change in microwave power received by the graphene-insulating-superconducting junction.

Provided are systems and methods to filter infrared spectrum radiation that can be integrated with a compact optical system for an infrared imaging system. The optical system includes an objective lens element configured to receive and transmit infrared (IR) radiation from a scene, where the IR radiation from the scene includes a particular range of wavelengths corresponding to an absorption spectrum or a transmission spectrum of a gas. The optical system also includes a spectral lens element configured to receive the IR radiation transmitted through the objective lens element, where the spectral lens element comprises a first interference filter disposed on a first surface of the spectral lens element. The interference filter is configured to filter the IR radiation transmitted through the objective lens element to a narrower wavelength band that includes the particular range of wavelengths.

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a cross-section having a first section, a second section substantially parallel to the first section, and a third section joining the first section and the second section.

An image sensor includes on a support a plurality of first pixels and a plurality of second pixels intended to detect an infrared radiation emitted by an element of a scene. Each of the pixels includes a bolometric membrane suspended above a reflector covering the support, wherein the reflector of each of the first pixels is covered with a first dielectric layer, and the reflector of each of the second pixels is covered with a second dielectric layer differing from the first dielectric layer by its optical properties.

An imaging device includes a plurality of temperature detection element units and a plurality of infrared absorption layer units arranged along a first direction and a second direction, in which: each of the temperature detection element units includes a first temperature detection element 21 and a second temperature detection element 22 adjacent to each other along the first direction; each of the infrared absorption layer units includes a first infrared absorption layer 41 and a second infrared absorption layer 42 adjacent to each other along the second direction; the first infrared absorption layer 41 is arranged above a first A region 21.sub.1 and a second A region 22.sub.1 and is thermally connected to the first temperature detection element 21; and the second infrared absorption layer 42 is arranged above a first B region 21.sub.2 and a second B region 22.sub.2 and is thermally connected to the second temperature detection element 22.

The invention concerns a detection device for detecting electromagnetic radiation, comprising a substrate, an array of thermal detectors, each thermal detector comprising a suspended absorbent membrane and a reflective layer. The detection device comprises at least one opaque vertical wall, arranged on the substrate and extending longitudinally between two adjacent thermal detectors, and produced from a material that is opaque to the electromagnetic radiation to be detected.

A thermo-mechanical resonating microbolometer has a graphene absorber suspended above a metallic silicon substrate to form a mechanical resonator. Microelectronic circuitry electrically connected to the graphene resonator and the metallic silicon substrate drives electronically the motion of the graphene absorber. Shifts in the mechanical resonant frequency of the graphene layer due to the absorption of incident radiation is measured electronically or using optical interferometry. A bolometer sensor array may be fabricated using such graphene microbolometer elements.

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.