An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same.

According to the present invention, a bolometer manufacturing method including: fabricating an interlayer having a function that enhances binding between a substrate and a carbon nanotube, in a predetermined shape on the substrate; and, making a semiconducting carbon nanotube dispersion liquid move on the interlayer in one direction relative to the fabricated interlayer is provided.

An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same.

According to the present invention, a bolometer manufacturing method including: fabricating an interlayer having a function that enhances binding between a substrate and a carbon nanotube, in a predetermined shape on the substrate; and, making a semiconducting carbon nanotube dispersion liquid move on the interlayer in one direction relative to the fabricated interlayer is provided.

An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same.

The present invention relates to a bolometer manufacturing method including: fabricating a set of two carbon nanotube wires that are approximately parallel to each other at edges of a line shape, or fabricating a circular shape carbon nanotube wire at a circular circumference of a circular shape, by applying a semiconducting carbon nanotube dispersion liquid in the line shape or the circular shape on a substrate, and drying the dispersion liquid, a width of each wire being 5 μm or more; and connecting a part of each wire to a first electrode and a second electrode.

An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same.

The present invention relates to a bolometer manufacturing method including: fabricating a set of two carbon nanotube wires that are approximately parallel to each other at edges of a line shape, or fabricating a circular shape carbon nanotube wire at a circular circumference of a circular shape, by applying a semiconducting carbon nanotube dispersion liquid in the line shape or the circular shape on a substrate, and drying the dispersion liquid, a width of each wire being 5 μm or more; and connecting a part of each wire to a first electrode and a second electrode.

An infrared image sensor includes a first integrate circuit (IC), a bolometer disposed on or above one surface of the first IC configured to detect infrared rays passing through a lens module, a via electrically connecting the first IC and the bolometer, and a reflective layer disposed between the first IC and the bolometer, wherein the first IC includes at least one of a read-out (RO) element configured to perform analog processing for the bolometer to generate infrared sensing information and an image signal process (ISP) element configured to perform digital processing based on the bolometer to generate infrared image information, and at least one of an autofocusing (AF) control element and an optical image stabilization (OIS) control element configured to adjust a positional relationship between the lens module and the bolometer.

Disclosed herein is a device including: at least one array of photoconductors, where each photoconductor is configured for exhibiting an electrical resistance dependent on an illumination of its light-sensitive region, where at least one photoconductor of the array is designed as characterizing photoconductor; at least one bias voltage source, where the bias voltage source is configured for applying at least one alternating bias voltage to the characterizing photoconductor or at least one direct current (DC) bias voltage to the characterizing photoconductor; at least one photoconductor readout circuit, where the photoconductor readout circuit is configured for determining of a response voltage of the characterizing photoconductor generated in response to the bias voltage, where the response voltage is proportional to a variable characterizing the array of photoconductors, where the photoconductor readout circuit is configured for determining of the response voltage of the characterizing photoconductor during operation of the array of photoconductors.

Disclosed herein is a device including: at least one array of photoconductors, where each photoconductor is configured for exhibiting an electrical resistance dependent on an illumination of its light-sensitive region, where at least one photoconductor of the array is designed as characterizing photoconductor; at least one bias voltage source, where the bias voltage source is configured for applying at least one alternating bias voltage to the characterizing photoconductor or at least one direct current (DC) bias voltage to the characterizing photoconductor; at least one photoconductor readout circuit, where the photoconductor readout circuit is configured for determining of a response voltage of the characterizing photoconductor generated in response to the bias voltage, where the response voltage is proportional to a variable characterizing the array of photoconductors, where the photoconductor readout circuit is configured for determining of the response voltage of the characterizing photoconductor during operation of the array of photoconductors.

An example object of the present invention is to provide a bolometer-type detector capable of reducing heat transfer between pixels. A bolometer-type detector according to an example aspect of the present invention includes a plurality of pixels, and at least includes: a substrate, a heat insulating layer provided on the substrate, bolometer films provided on individual pixels on the heat insulating layer, and a wiring for signal output connected to contact electrodes provided in contact with the bolometer films, wherein the wiring for signal output is disposed in a layer different from the bolometer films, and the heat insulating layer between adjacent pixels is removed at least partially in the depth direction and in a region of a length of 50% or longer and a width of 100 nm or wider of a closed curve that surrounds each bolometer film.

An example object of the present invention is to provide a bolometer-type detector capable of reducing heat transfer between pixels. A bolometer-type detector according to an example aspect of the present invention includes a plurality of pixels, and at least includes: a substrate, a heat insulating layer provided on the substrate, bolometer films provided on individual pixels on the heat insulating layer, and a wiring for signal output connected to contact electrodes provided in contact with the bolometer films, wherein the wiring for signal output is disposed in a layer different from the bolometer films, and the heat insulating layer between adjacent pixels is removed at least partially in the depth direction and in a region of a length of 50% or longer and a width of 100 nm or wider of a closed curve that surrounds each bolometer film.

An imaging system includes a focal plane array, readout electronics, and a computing system in which the number of active pixels is either set at a low-fraction of the total pixels thereby reducing the effect of radiation damage, or radiation damage over time is detected and automatically compensated. Machine learning is used to identify radiation damaged pixels and damaged regions which are subsequently eliminated and replaced by the computational system. The machine learning is used to identify changes in the fixed pattern signal/noise and/or noise of the system, and is then computationally corrected.