A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.

An example object of the present invention is to provide a bolometer-type detector capable of reducing heat transfer between pixels. A bolometer-type detector according to an example aspect of the present invention includes a plurality of pixels, and at least includes: a substrate, a heat insulating layer provided on the substrate, bolometer films provided on individual pixels on the heat insulating layer, and a wiring for signal output connected to contact electrodes provided in contact with the bolometer films, wherein the wiring for signal output is disposed in a layer different from the bolometer films, and the heat insulating layer between adjacent pixels is removed at least partially in the depth direction and in a region of a length of 50% or longer and a width of 100 nm or wider of a closed curve that surrounds each bolometer film.

An example object of the present invention is to provide a bolometer-type detector capable of reducing heat transfer between pixels. A bolometer-type detector according to an example aspect of the present invention includes a plurality of pixels, and at least includes: a substrate, a heat insulating layer provided on the substrate, bolometer films provided on individual pixels on the heat insulating layer, and a wiring for signal output connected to contact electrodes provided in contact with the bolometer films, wherein the wiring for signal output is disposed in a layer different from the bolometer films, and the heat insulating layer between adjacent pixels is removed at least partially in the depth direction and in a region of a length of 50% or longer and a width of 100 nm or wider of a closed curve that surrounds each bolometer film.

A control method of an infrared detector, for obtaining a wider dynamic range and preventing an over-range, is disclosed. The method includes: monitoring a value acquired in response to an electric current flowing in each of a plurality of infrared detection elements configuring the infrared detector, and lowering, when the value acquired in response to the electric current flowing in the infrared detection element reaches a threshold value within a detection time, sensitivity of the infrared detection element within the detection time.

A control method of an infrared detector, for obtaining a wider dynamic range and preventing an over-range, is disclosed. The method includes: monitoring a value acquired in response to an electric current flowing in each of a plurality of infrared detection elements configuring the infrared detector, and lowering, when the value acquired in response to the electric current flowing in the infrared detection element reaches a threshold value within a detection time, sensitivity of the infrared detection element within the detection time.

An infrared image sensor includes a first integrate circuit (IC), a bolometer disposed on or above one surface of the first IC configured to detect infrared rays passing through a lens module, a via electrically connecting the first IC and the bolometer, and a reflective layer disposed between the first IC and the bolometer, wherein the first IC includes at least one of a read-out (RO) element configured to perform analog processing for the bolometer to generate infrared sensing information and an image signal process (ISP) element configured to perform digital processing based on the bolometer to generate infrared image information, and at least one of an autofocusing (AF) control element and an optical image stabilization (OIS) control element configured to adjust a positional relationship between the lens module and the bolometer.

An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same. The present invention relates to a bolometer manufacturing method including: fabricating a set of two carbon nanotube wires that are approximately parallel to each other at edges of a line shape, or fabricating a circular shape carbon nanotube wire at a circular circumference of a circular shape, by applying a semiconducting carbon nanotube dispersion liquid in the line shape or the circular shape on a substrate, and drying the dispersion liquid, a width of each wire being 5 μm or more; and connecting a part of each wire to a first electrode and a second electrode.

An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same. The present invention relates to a bolometer manufacturing method including: fabricating a set of two carbon nanotube wires that are approximately parallel to each other at edges of a line shape, or fabricating a circular shape carbon nanotube wire at a circular circumference of a circular shape, by applying a semiconducting carbon nanotube dispersion liquid in the line shape or the circular shape on a substrate, and drying the dispersion liquid, a width of each wire being 5 μm or more; and connecting a part of each wire to a first electrode and a second electrode.

The present invention relates to a phononic-isolated Kinetic Inductance Detector (KID) and a method of fabrication thereof. The KID is a highly sensitive superconducting cryogenic detector which can be scaled to very large format arrays. The fabrication process of the KID of the present invention integrates a phononic crystal into a KID architecture. The phononic structures are designed to reduce the loss of recombination and athermal phonons, resulting in lower noise and higher sensitivity detectors.

The present invention relates to a phononic-isolated Kinetic Inductance Detector (KID) and a method of fabrication thereof. The KID is a highly sensitive superconducting cryogenic detector which can be scaled to very large format arrays. The fabrication process of the KID of the present invention integrates a phononic crystal into a KID architecture. The phononic structures are designed to reduce the loss of recombination and athermal phonons, resulting in lower noise and higher sensitivity detectors.