A resistor network with reduced area and/or improved voltage resolution and methods of designing and operating the same are provided. Generally, the resistor network includes a resistor ladder with a first number (n) of integrated resistors coupled in series between a top and a bottom contact, with one or more contacts coupled between adjacent resistors. A second number of integrated resistors is coupled in parallel between the top and bottom contacts, and a third number of integrated resistors is coupled in series between the second integrated resistors and either the top or the bottom contact. Each of the integrated resistors has a resistance of R, and a voltage developed across each resistor in the resistor ladder is equal to a voltage applied between the top and bottom contacts divided by n. Where the second number is n−1, and the third number is 1, the total number of resistors is 2n.

A voltage-glitch detection and protection circuit and method are provided. Generally, circuit includes a voltage-glitch-detection-block (GDB) and a system-reset-block coupled to the GDB to generate a reset-signal to cause devices in a chip including the circuit to be reset when a voltage-glitch in a supply voltage (VDD) is detected. The GDB includes a voltage-glitch-detector coupled to a latch. The voltage-glitch-detector detects the voltage-glitch and generates a PULSE to the system-reset-block and latch. The latch receives the PULSE and generates a PULSE_LATCHED signal to the system-reset-block to ensure the reset-signal is generated no matter a width of the PULSE. In one embodiment, the latch includes a filter and a sample and hold circuit to power the latch, and ensure the PULSE_LATCHED signal is coupled to the system-reset-block when a voltage to the GDB or to the latch drops below a minimum voltage due to the voltage-glitch.

A method of calibrating temperature of a resistive element having a material with a Curie temperature includes generating a standard resistance-temperature (R-T) curve for the resistive element in isothermal conditions to identify values of the R-T curve and an inflection point at the Curie temperature, generating operational R-T curves for the resistive element over an operational time period, comparing the standard R-T curve to the operational R-T curves, and adjusting the operational curves to the standard R-T curve at the Curie temperature to calibrate temperature of the resistive element.

The present invention relates to a tubular wire shielding (9) for an exhaust gas temperature sensor arrangement (1), the tubular wire shielding (9) comprising a first shielding tube (13) comprising one or more through channels for accommodating one or more wires (6a, 6b, 8a, 8b, 11a, 11b) and/or for accommodating one or more temperature measurement sensors (7), the tubular wire shielding (9) furthermore comprising a second shielding tube (14) radially surrounding the first shielding tube (14). It is an object of the invention to provide a tubular wire shielding (9) and an exhaust temperature sensor arrangement (1) which are of good mechanical stability. The object is solved in that the tubular wire shielding (9) comprises a first tube adhesive layer (15) arranged interposed between the first shielding tube (13) and the second shielding tube (14), the first tube adhesive layer (15) fixing the first shielding tube to the second shielding tube (14). Furthermore, the object is solved by an exhaust gas temperature sensor arrangement (1), preferably comprising such a wire shielding (9), and a method for assembling the exhaust gas temperature sensor arrangement (1).

A resistance pattern that contains platinum as a main component is formed into a meander shape and on a main surface of a ceramic substrate. A protective film layer that covers the resistance pattern has a two-layer structure including a trap layer as an inner layer and an overcoat layer as an outer layer. The trap layer contains alumina as a main component and 2 to 30 vol % of platinum. The overcoat layer contains alumina as a main component. With such a configuration, even when reactivity of the platinum resistance pattern becomes higher under high temperature use, platinum contained in the trap layer reacts with oxygen or impurities etc. contained in the ceramic substrate. Thus, reaction of the platinum resistance pattern can be suppressed.

Aspects of the invention are directed towards a system and a method for sensing temperature of an item and displaying temperature thereof. One or more embodiments of the invention describe the method comprising steps of sensing, by a metal crimp coupled with a sensor, a temperature of content inside an item and determine a value of the temperature. The method further describes step of displaying an indication of the temperature value on an electrochromic strip coupled with the sensor.

A circuit includes a temperature-sensitive voltage divider. The temperature-sensitive voltage divider includes a temperature-sensitive resistor and a second resistor having a first terminal coupled to a first terminal of the temperature-sensitive resistor. A temperature signal is generated at a first node coupled to the first terminal of the temperature-sensitive resistor. Detection logic is coupled to the first node to generate a detection signal responsive to the temperature signal.

In a particular embodiment of the present disclosure, an apparatus is disclosed for improving for the stability of a resistance temperature detector (RTD). In this particular embodiment, the apparatus includes an RTD having a case surrounding a resistive meander deposited on a substrate. The RTD also includes a pull-down resistor. A first end of the resistive meander is configured for coupling to a positive power supply. The second end of the resistive meander is coupled to a first end of the pull-down resistor. The second end of the pull-down resistor is coupled to a ground. The case of the RTD is also coupled to the ground.

A three-phase load is powered by an SPWM driven inverter having a single shunt-topology. During operation, drain-to-source resistances of transistors of each branch of the inverter are determined. Interpolation is performed on assumed drain-to-source resistances of the transistors for different temperatures to produce a non-linear model of drain-to-source resistance to temperature for the transistors, and the drain-to-source resistances determined during operation and the non-linear model are used to estimate temperature values of the transistors. Driving of the inverter can be adjusted so that conductivity of each branch is set so that power delivered by that branch is as high as possible without exceeding an allowed drain current threshold representing a threshold junction temperature. In addition, driving of the inverter can be ceased if the temperature of a transistor exceeds the threshold temperature.

The present invention enables the achievement of: high density mounting by means of an electronic component for welding; and improvement of thermal responsivity and tensile strength at high temperatures by means of reduction in size and thickness of a temperature sensor. An electronic component for welding, which has a function of a resistor, a capacitor, an inductor or the like, comprises: an insulating substrate; a function part and a bonding electrode part, which are provided on the insulating substrate; and a lead which is electrically connected to the bonding electrode part. The bonding electrode part is configured of: an adhesive active metal layer which is formed from a high-melting-point metal on the insulating substrate; a barrier layer which is formed from a high-melting-point metal on the active metal layer; and a bonding metal layer which is mainly composed of a low-melting-point metal and is formed on the barrier layer.