Disclosed are a high-sensitivity temperature sensor and a method of manufacturing the same. A high-sensitivity temperature sensor according to an embodiment of the present disclosure includes a stretchable substrate; a first temperature-sensing layer formed on the stretchable substrate and configured to include a first temperature-sensing part in which cracks are formed by conductive nanoparticles surrounded with a second organic ligand; first and second electrodes formed to be spaced apart from each other on the first temperature-sensing layer and configured to include conductive nanoparticles surrounded with an inorganic ligand; a second temperature-sensing part formed between the first and second electrodes and cracked due to the conductive nanoparticles surrounded with the second organic ligand; a second temperature-sensing layer formed on the first and second electrodes and cracked due to the conductive nanoparticles surrounded with the second organic ligand; and a protective layer formed on the second temperature-sensing part.

The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.

The disclosure relates to a microelectromechanical apparatus including a substrate, a stationary electrode, a movable electrode, and a heater. The substrate includes an upper surface, an inner bottom surface, and an inner side surface. The inner side surface surrounds and connects with the inner bottom surface. The inner side surface and the inner bottom surface define a recess. The stationary electrode is disposed on the inner bottom surface. The movable electrode covers the recess. The movable electrode, the inner bottom surface, and the inner side surface define a hermetic chamber. The heater is disposed on the movable electrode and located above the hermetic chamber.

The present disclosure generally relates to the field of resistive sensing. In particular, the present disclosure relates to a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite based fast response temperature sensor. Aspects of the present disclosure provide a method for fabrication of a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite-based temperature sensor. An aspect of the present disclosure provides a temperature sensor comprising: a substrate; and a composite film deposited onto said substrate, wherein the composite film comprises a reduced graphene oxide-nickel composite film. In an embodiment, the temperature sensor is cryo-compatible.

The present invention provides a vapor-permeable flexible sensing platform unit comprising: a first porous membrane, wherein said membrane is substantially flexible and hydrophobic; and a volatile organic compounds (VOCs) sensor disposed on said membrane, the VOCs sensor comprising an electrode array and a conducting polymer porous film being in electric contact with said electrode array, wherein the VOCs sensor is insensitive to lateral strain. Further provided are a method of preparation of said platform unit and a lift-off, float-on (LOFO) method for the preparation of protonically doped polyaniline (PANI) thin films.

A microheater includes a first insulating layer, a first adhesion layer on the first insulating layer, a wiring layer on the first adhesion layer, a second adhesion layer that covers the wiring layer, and a second insulating layer above the first insulating layer and on the second adhesion layer. In the microheater, the wiring layer contains platinum, the first adhesion layer and the second adhesion layer each contain a metal oxide, and the metal oxide has an oxygen-deficient region in which the oxygen is deficient in the stoichiometric ratio of metal to oxygen.

The disclosure relates to a microelectromechanical apparatus including a substrate, a stationary electrode, a movable electrode, and a heater. The substrate includes an upper surface, an inner bottom surface, and an inner side surface. The inner side surface surrounds and connects with the inner bottom surface. The inner side surface and the inner bottom surface define a recess. The stationary electrode is disposed on the inner bottom surface. The movable electrode covers the recess. The movable electrode, the inner bottom surface, and the inner side surface define a hermetic chamber. The heater is disposed on the movable electrode and located above the hermetic chamber.

A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed. Such a miniature integrated multi-sensor module that features low power consumption can be used in medical monitoring and mobile computing, including smart phone applications.

Disclosed are a high-sensitivity temperature sensor and a method of manufacturing the same. A high-sensitivity temperature sensor according to an embodiment of the present disclosure includes a stretchable substrate; a first temperature-sensing layer formed on the stretchable substrate and configured to include a first temperature-sensing part in which cracks are formed by conductive nanoparticles surrounded with a second organic ligand; first and second electrodes formed to be spaced apart from each other on the first temperature-sensing layer and configured to include conductive nanoparticles surrounded with an inorganic ligand; a second temperature-sensing part formed between the first and second electrodes and cracked due to the conductive nanoparticles surrounded with the second organic ligand; a second temperature-sensing layer formed on the first and second electrodes and cracked due to the conductive nanoparticles surrounded with the second organic ligand; and a protective layer formed on the second temperature-sensing part.

A thermoresistive micro sensor device includes a semiconductor chip; a through hole, which runs through the semiconductor chip from an upper side to a lower side; electrically conductive structures, wherein the middle section of each of the electrically conductive structures spans over the through hole at the upper side of the semiconductor chip; an electrically insulating arrangement for electrically insulating the electrically conductive structures and the semiconductor chip from each other, wherein the through hole runs through the electrically insulating arrangement; and a contact arrangement including contacts, wherein each of the contacts is electrically connected to one of the first end sections or one of the second end sections, so that electrical energy is fed to at least one of the electrically conductive structures to heat the respective electrically conductive structure, and so that an electrical resistance of one of the electrically conductive structures is measured at the contact arrangement.