An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

A semiconductor device includes a first substrate and a first device layer. The first device layer is disposed on the first substrate and includes a first region and a second region of the first device layer. The first device layer includes at least one first device and a sensor aside the at least one first device. The sensor includes a first resistor with a first non-linear temperature resistance curve and a second resistor with a second non-linear temperature resistance curve. A temperature of the sensor is linearly related to a difference between a first resistance of the first resistor at the temperature and a second resistance of the second resistor at the temperature.

A thermal sensor includes a first resistor and a first capacitor. The first resistor is a thermistor. A first current source is coupled to the first resistor and the first capacitor. The first current source alternately charges the first resistor and the first capacitor each to a reference voltage, V.sub.therm. An output of the thermal sensor is a function of a resistance-capacitance (RC) time constant of the first resistor and the first capacitor.

An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal operates to impose the drain-source current of the first transistor.

A micromachined apparatus includes micromachined thermistor having first and second ends physically and thermally coupled to a substrate via first and second anchor structures to enable a temperature-dependent resistance of the micromachined thermistor to vary according to a time-varying temperature of the substrate. The micromachined thermistor has a length, from the first end to the second end, greater than a linear distance between the first and second anchor structures.

A temperature sensor can include a resistor, a first electrical contact at a first end of the resistor, a second electrical contact at a second end of the resistor, and a resistance measuring device. The resistor can be formed of a matrix of sintered elemental transition metal particles interlocked with a matrix of fused thermoplastic polymer particles. The resistance measuring device can be connected to the first electrical contact and the second electrical contact to measure a resistance of the resistor.

A new semiconductor electronic principle technology and device is a fundamental change in semiconductor science and technology. the new semiconductor electronic principle guessed and Validation from reality, fully reflects the essence of semiconductor electronic devices, and correctly understand and guide the work of semiconductor electronic devices, It is revealed that the function of semiconductor electronic devices is to convert electrical signals, which are converted by the voltage applied to junctions, P-N junctions, semiconductor metal junctions or insulator metal junctions that can be formed in a variety of semiconductor materials, changing the carrier density distribution on both sides of the junctions and junctions, modulated the conductivity and resistivity of the junctions, exponential variation of the conductivity of the passive semiconductor electronic devices formed by the junction alone or in combination with the difference between the applied voltage and the transistor threshold voltage, and modulating the conductivity of the semiconductor electronic devices and completing the conversion of electrical signals; New semiconductor electronic principles, technologies, passive semiconductor electronic devices, code, software and operating systems based on conductivity change, replacing current semiconductor electronic principles, technologies, active semiconductor electronic devices, current code, software and operating systems for all semiconductor electronic technologies and devices based on current change; A new semiconductor electronic device with high stability, reliability and low power loss is invented to effectively solve the key problems such as heating of semiconductor electronic devices, to maintain normal, stable and reliable work in ambient temperature below 80? C., to reduce the cost of products, and to solve the urgent breakthrough in the fields of driverless, artificial intelligence and intelligent medicine. It relates to semiconductor electronic principle and technology, device structure and working principle, circuit design, develop new software and new operating system, device manufacture and material, product function and characteristic, belongs to semiconductor electronic technology field.

A sensor assembly is provided that allows for a more rapid sensing of thermal changes. In preferred embodiments, the sensor assembly includes a housing, sensor package, bushing, coupling and gasket. The bushing is made from a conductive material like copper or silver and provides a conductive path from the bottom of the sensor package directly into the medium whose temperature is to be sensed or close thereto. A coupling is provided between the conductive bushing the metal housing to prevent heat exchange between the metal housing and the bushing. The gasket is placed in compression and provides a constant force holding the conductive bushing against the bottom of the sensor package.

Embodiments of the present disclosure provide techniques and configurations for inspection of a package assembly with a thermal solution, in accordance with some embodiments. In embodiments, an apparatus for inspection of a package assembly with a thermal solution may include a first fixture to house the package assembly on the apparatus, and a second fixture to house at least a portion of a thermal solution that is to be disposed on top of the package assembly. The apparatus may further include a load actuator, to apply a load to a die of the package assembly, via the thermal solution, and a plurality of sensors disposed around the thermal solution and the package assembly, to perform in situ thermal and/or mechanical measurements associated with the application of the load to the die of the package assembly. Other embodiments may be described and/or claimed.

A MEMS apparatus having measuring range selector including a sensor and an IC chip is provided. The sensor includes a sensing device. The IC chip includes a voltage range selector, an analog front end, a control device and an A/D converter. The sensing device is configured to detect the physical quantity and generate a sensing voltage. The voltage range selector is configured to select a sub-voltage range having a first upper-bound and a first lower-bound. The analog front end is configured to receive the sensing voltage and output a first voltage. The A/D converter has a full scale voltage range having a second lower-bound and a second upper-bound. A ratio of the full scale voltage range to the sub-voltage range is defined as a gain factor. A difference obtained by subtracting the first lower-bound from the first voltage is defined as a shift factor. The control device is configured to adjust the first voltage to the second voltage according to the gain factor and the shift factor.