A method for fabricating a strain sensing film, a strain sensing film, and a pressure sensor are provided in the present application. A semiconductor wafer is firstly thinned to form a semiconductor film. A die attach film is attached onto the semiconductor film. A resulting semiconductor film is diced to form a plurality of independent strain films. The plurality of independent strain films are transferred to a substrate, and the plurality of independent strain films are completely attached to the substrate. A metal pad of each of the plurality of independent strain films is electrically connected with a corresponding metal pad of the substrate. The plurality of independent strain films are packaged. In this way, the package process of the strain sensing film is completed, which tackles the problem that the existing COB packaging has defects when being applied to package the sensor film.

A sensor comprises conductive elements arranged and connected for proximity sensing. The conductive elements are formed of an ionically conductive polymer. The sensor may also include conductive elements arranged and connected for touch sensing. The conductive elements may be connected to an alternating-current (AC) source. Another sensor comprises one or more conductive elements arranged and connected for touch sensing by detecting resistivity changes in the one or more conductive elements. A flexible and transparent sensor is also provided, which comprises a layer of a piezoelectric polymer and conductive elements in contact with the layer for transmitting an electric signal generated by compression of the layer. Methods and processes for using such sensors are also provided.

Resistive and capacitive force sensor including an element having first and second electrodes, wherein the element is configured such that, when an external force is applied, intrinsic capacitance of the electrodes and intrinsic resistance between the electrodes change as a function of a magnitude of the external force; a first unit connected to the electrodes and configured to determine an intrinsic electrical capacitance C(t) of the second electrode; a second unit connected to the electrodes and configured to determine an electrical resistance R(t) between the electrodes; an evaluation unit configured to determine magnitude |F(t)| of force F(t) applied externally to the element as a function of a mean value of the determined intrinsic capacitance C(t) in a time interval and as a function of a mean value of the determined resistance R(t) in the time interval; and an output unit configured to output the determined magnitude |F(t)| of force F(t).

A force sensor having a noise shielding layer is disclosed. For a first embodiment, a top noise shielding layer is configured on a top surface of a force sensor to screen noise signals which are caused by human body's touch or approaching from top of the force sensor. For a second embodiment, a bottom noise shielding layer is configured on a bottom surface of the force sensor to screen noise signals which are caused by human body's touch or approaching from bottom of the force sensor.

A pressure sensor includes: a base substrate including an embossed pattern; a first conductive layer disposed on the base substrate; a pressure sensitive material layer disposed on the first conductive layer such that its electrical characteristic is varied corresponding to a strain applied thereto, the pressure sensitive material layer including a dielectric and nanoparticles dispersed in the dielectric; and a second conductive layer disposed on the pressure sensitive material layer, wherein the dielectric and the nanoparticle include materials having pyroelectricities of polarities opposite to each other.

The present disclosure relates to an apparatus comprising at least one sensing capacitor and a controller, wherein the controller is configured to receive a signal from the at least one sensing capacitor indicative of a change of charge of the sensing capacitor, and wherein the controller is configured to determine an amount of force applied to the sensing capacitor, an acceleration of the sensing capacitor, a torsion of the sensing capacitor, a vibration of the sensing capacitor or a pulling force applied to the sensing capacitor based on the change of charge of the at least one sensing capacitor.

A pressure sensor is a pressure sensor that includes: a capacitive sensor electrode layer that includes a plurality of sensing units; a first reference electrode layer that faces a first surface of the sensor electrode layer; a second reference electrode layer that faces a second surface of the sensor electrode layer; an elastic layer disposed between the first reference electrode layer and the sensor electrode layer; and a gap layer disposed between the second reference electrode layer and the sensor electrode layer. In the pressure sensor, the sensor electrode layer, the first reference electrode layer, and the second reference electrode layer have a slit.

The integrated electronic device detects the pressure related to a force applied in a predetermined direction within a solid structure. The device includes an integrated element that is substantially orthogonal to the direction of application of the force. First and second conductive elements are configured to face an operating surface. A measure module includes first and second measurement terminals which are electrically connected to the first and second conductive elements, respectively. A detecting element is arranged in the predetermined direction such that the operating surface is sandwiched between the first and second conductive elements and this detecting element. An insulating layer galvanically insulates the first and second conductive elements. A layer of dielectric material is sandwiched between the detecting element and the insulating layer, and is elastically deformable following the application of the force to change an electromagnetic coupling between the detecting element and the first and second conductive elements.

The invention relates to devices, systems and methods exploiting capacitive means for monitoring and analysing teeth-related parameters in a subject, such as the dental occlusion profile and/or the load/force applied upon clenching. The device comprises a body such as a bite fork or bite splint, capacitive sensor(s) incorporated within a soft substrate reversibly deformable once bitten by a subject and a micro-controller unit. The teeth contact points and forces applied upon occlusion are measured via the sensors, delivered to and re-elaborated by the micro-controller unit and possibly sent and visualized in a graphical/numerical fashion on e.g. a display screen.

A manufacturing method for a MEMS element, by which both a microphone including a microphone capacitor and a pressure sensor including a measuring capacitor are implemented in the MEMS structure. The components of the microphone and pressure sensor are formed in parallel but independently in the layers of the MEMS structure. The pressure sensor diaphragm is structured from a first layer, which functions as a base layer for the microphone diaphragm. The fixed counter-electrode of the measuring capacitor is structured from an electrically conductive second layer which functions as a diaphragm layer of the microphone. The fixed pressure sensor counter-element is structured from third and fourth layers. The third layer functions in the area of the microphone structure as a sacrificial layer, the thickness of which in the area of the microphone structure determines the electrode distance of the microphone capacitor. The microphone counter-element is structured from the fourth layer.