Pressure sensors having vertical diaphragms or membranes. A vertical diaphragm may be located in a first silicon wafer between a first and second cavity, where the first and second cavities are covered by a second silicon wafer. One or more active or passive devices or components may be located on a top of the vertical diaphragm.

A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

The voltages output from a low-pressure MEMS sensor are increased by increasing the sensitivity of the sensor. Sensitivity is increased by thinning the diaphragm of the low pressure sensor device. Nonlinearity increased by thinning the diaphragm is reduced by simultaneously creating a cross stiffener on the top side of the diaphragm. An over-etch of the top side further increases sensitivity.

Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.

A resonant pressure sensor includes a first substrate and a resonator. The first substrate includes a diaphragm and a projection disposed on the diaphragm. The resonator is disposed in the first substrate, a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate. The first substrate is an SOI substrate in which a silicon dioxide layer is inserted between a silicon substrate and a superficial silicon layer. The intermediate level of the first substrate is disposed in the silicon substrate, and the resonator is disposed in the projection included in the superficial silicon layer.

A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.

A micromechanical component for a capacitive pressure sensor device, including a diaphragm that is stretched with the aid of a frame structure in such a way that a cantilevered area of the diaphragm spans a framed partial surface, and including a reinforcement structure that is formed at the cantilevered area. A first spatial direction oriented in parallel to the framed partial surface is definable in which the cantilevered area has a minimal extension, and a second spatial direction oriented in parallel to the framed partial surface and oriented perpendicularly with respect to the first spatial direction is definable in which the cantilevered area has a greater extension. The reinforcement structure is present at a first distance from the frame structure in the first spatial direction, and at a second distance in the second spatial direction, the second distance being greater than the first distance.

According to one embodiment, a pressure sensor includes a base body, a supporter, a film part, a first electrode, and a second electrode. The supporter is fixed to the base body. The film part is separated from the base body. The film part includes first, second, and third partial regions, and a rim portion. The rim portion is supported by the supporter. The second partial region is between the first partial region and the rim portion. The third partial region is between the second partial region and the rim portion. The first electrode is provided between the base body and the first partial region and between the base body and the second partial region. The first electrode is fixed to the base body. The second electrode is provided between the first electrode and the first partial region and between the first electrode and the second partial region.

In accordance with one aspect, a device is provided having a transducer comprising a conductor, a diaphragm configured to move relative to the conductor, and a reference volume in communication with the external environment. The diaphragm separates the reference volume and the external environment. The device further includes a controller operably coupled to the transducer and configured to determine an air pressure of an external environment based at least in part on movement of the diaphragm.

A sensor element suitable for miniaturization. This pressure sensor element has: a metal plate; an insulating film provided on a first surface, which is one surface of the metal plate, so as to form a covered region in which the first plate is covered and an exposed region in which the first surface is exposed; and a pressure detection circuit formed on the insulating film so as to be insulated from the first surface by means of the insulating film.