G01L9/0047

High sensitivity MEMS pressure sensor

We present a microelectromechanical system (MEMS) graphene-based pressure sensor realized by transferring a large area, few-layered graphene on a suspended silicon nitride thin membrane perforated by a periodic array of micro-through-holes. Each through-hole is covered by a circular drum-like graphene layer, namely a graphene microdrum. The uniqueness of the sensor design is the fact that introducing the through-hole arrays into the supporting nitride membrane allows generating an increased strain in the graphene membrane over the through-hole array by local deformations of the holes under an applied differential pressure. Further reasons contributing to the increased strain in the devised sensitive membrane include larger deflection of the membrane than that of its imperforated counterpart membrane, and direct bulging of the graphene microdrum under an applied pressure. Electromechanical measurements show a gauge factor of 4.4 for the graphene membrane and a sensitivity of 2.810-5 mbar-1 for the pressure sensor specific example described, with a good linearity over a wide pressure range. The present sensor outperforms most existing MEMS-based small footprint pressure sensors using graphene, silicon, and carbon nanotubes as sensitive materials, due to the high sensitivity.

Diaphragm suppressing pressure sensor

A pressure sensor including: a cylindrical casing extending in an axial direction; a diaphragm joined to the distal end side of the casing, extending in a direction intersecting the axis of the casing and deforming in accordance with pressure received on the distal end side; and a sensor section disposed inside the casing and outputting an electric signal corresponding to the deformation of the diaphragm. The diaphragm is provided with a plate-shaped base part and three or more protruding parts protruding from the distal end side surface of the base part toward the distal end side and set apart from each other. The relationships 0.05H2.5T and 0.05(S2/S1)0.8 are satisfied, where T (thickness), H (length), S1 (area of base distal end surface) and S2 (total area of protruding distal end surfaces) are as defined herein.

Passive wireless pressure sensor for harsh environments

Methods and apparatuses for measuring static and dynamic pressures in harsh environments are disclosed. A pressure sensor according to one embodiment of the present invention may include a diaphragm constructed from materials designed to operate in harsh environments. A waveguide may be operably connected to the diaphragm, and an electromagnetic wave producing and receiving (e.g., sensing) device may be attached to the waveguide, opposite the diaphragm. A handle may be connected between the diaphragm and the waveguide to provide both structural support and electrical functionality for the sensor. A gap may be included between the handle and the diaphragm, allowing the diaphragm to move freely. An antenna and a ground plane may be formed on the diaphragm or the handle. Electromagnetic waves may be reflected off the antenna and detected to directly measure static and dynamic pressures applied to the diaphragm.

Environmental sensor and manufacturing method thereof

An environmental sensor and manufacturing method thereof. The environmental sensor comprises: a substrate comprising at least one recess disposed at an upper portion of the substrate; and a sensitive film layer disposed above the substrate, comprising a fixed portion fixed on an end surface of the substrate and a bent portion configured to extend inside the recess. The bent portion and a side wall of the recess form a capacitor configured to detect a signal. The bent portion, fixed portion, and the recess form a closed cavity. A conventional capacitive structure configured on a substrate surface is changed to a capacitive structure of the environmental sensor vertically extending into the inside of the substrate, increasing a depth of the recess, and in turn, increasing a sensing area between two polar plates of the capacitor, significantly shrinking a coverage area of the capacitor on the substrate, and satisfying a requirement of a modern compact electronic component.

SYSTEMS AND METHODS FOR EXTENDING FREQUENCY RESPONSE OF RESONANT TRANSDUCERS

Certain implementations of the disclosed technology may include systems and methods for extending a frequency response of a transducer. A method is provided that can include receiving a measurement signal from a transducer, wherein the measurement signal includes distortion due to a resonant frequency of the transducer. The method includes applying a complementary filter to the measurement signal to produce a compensated signal, wherein applying the complementary filter reduces the distortion to less than about +/1 dB for frequencies ranging from about zero to about 60% or greater of the resonant frequency. The method further includes outputting the compensated signal.

Pressure sensors with tensioned membranes

Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.

Compact pressure transducer
10697844 · 2020-06-30 · ·

The present disclosure includes a pressure transducer comprising: a frame; a cantilevered beam; a resilient beam portion; a signal processing circuit; a wiring terminal; and a support member. The resilient beam portion anchors the cantilevered beam to the frame. The cantilevered beam moves in response to a pressure-induced force applied to the cantilevered beam and the resilient beam portion bends producing a strain within the resilient beam portion. The support member comprises a cavity and the signal processing circuit is entirely installed inside the cavity. There is a strain gauge diffused into, implanted into, and/or affixed to the resilient beam portion. The cavity of the support member includes a first aperture disposed along the first surface of the support member and the inner surface of the frame covers the first aperture.

Systems and methods for extending frequency response of resonant transducers

Certain implementations of the disclosed technology may include systems and methods for extending a frequency response of a transducer. A method is provided that can include receiving a measurement signal from a transducer, wherein the measurement signal includes distortion due to a resonant frequency of the transducer. The method includes applying a complementary filter to the measurement signal to produce a compensated signal, wherein applying the complementary filter reduces the distortion to less than about +/1 dB for frequencies ranging from about zero to about 60% or greater of the resonant frequency. The method further includes outputting the compensated signal.

PRESSURE SENSOR

A pressure sensor including: a cylindrical casing extending in an axial direction; a diaphragm joined to the distal end side of the casing, extending in a direction intersecting the axis of the casing and deforming in accordance with pressure received on the distal end side; and a sensor section disposed inside the casing and outputting an electric signal corresponding to the deformation of the diaphragm. The diaphragm is provided with a plate-shaped base part and three or more protruding parts protruding from the distal end side surface of the base part toward the distal end side and set apart from each other. The relationships 0.05H2.5T and 0.05(S2/S1)0.8 are satisfied, where T (thickness), H (length), S1 (area of base distal end surface) and S2 (total area of protruding distal end surfaces) are as defined herein.

MINIATURIZED AND RUGGEDIZED WAFER LEVEL MEMS FORCE SENSORS
20200024126 · 2020-01-23 ·

Described herein is a miniaturized and ruggedized wafer level MEMS force sensor composed of a base and a cap. The sensor employs multiple flexible membranes, a mechanical overload stop, a retaining wall, and piezoresistive strain gauges.