A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.

Implementations of absolute pressure sensor devices may include a microelectromechanical system (MEMS) absolute pressure sensor coupled over a controller die. The MEMS absolute pressure sensor may be mechanically coupled to the controller die and may also be configured to electrically couple with the controller die. A perimeter of the controller die may be one of the same size and larger than a perimeter of the MEMS absolute pressure sensor. The controller die may be configured to electrically couple with a module through an electrical connector.

A sensor module and a joint are made of different metal materials. The sensor module includes a first portion located near a diaphragm and a second portion having a large-diameter portion whose diameter is larger than that of the first portion. A step engaged with a peripheral edge of the large-diameter portion is formed on the joint. The large-diameter portion and the joint are mutually bonded through a bonding portion. The bonding portion is bonded by a plastic deformation bonding that is so-called metal flow. A space is defined between the joint and the module body.

Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.

A MEMS device for use in some embodiments in a microphone or pressure sensor and method of making the same wherein a portion of the package surrounding the acoustic port is deformed either away from, towards, or both away from and towards the interior of the package. By providing this raised area proximate the acoustic port, external debris is less likely to enter the acoustic port and damage the fragile MEMS die. Further, internal attachment material holding the MEMS die to the inside of the package is prevented by flowing into and obscuring the acoustic port. The advantages of this design include longer operation lifetimes for the MEMS device, greater design freedom, and increases in production yield.

A flip chip pressure sensor assembly. The flip chip pressure sensor assembly comprises a substrate; a pressure sensor die comprising a sensing diaphragm, the die having a top side and a bottom side that is reverse to the top side, where the top side of the die is electrically connected to the substrate by flip chip mounting technology; a cover defining an aperture disposed over the pressure sensor die, where the aperture defined by the cover aligns with the sensing diaphragm to provide a path for pressure to be transmitted through the aperture to the bottom side of the sensing diaphragm; and a gel disk disposed within the aperture in intimate contact with a bottom side of the sensing diaphragm, where the gel disk is domed above an outer shoulder of a rim defined by the cover.

Methods and apparatuses related to freeze resistant sensing assemblies are provided. An example pressure sensing assembly may include: a first member defining an aperture, the aperture comprising an inner opening disposed on an inner surface of the first member and an outer opening disposed on an outer surface of the first member; a protection diaphragm disposed on the inner surface of the first member; and a sensing diaphragm disposed in a second member fastened to the first member.

A method for manufacturing a pressure measuring cell, which has a ceramic platform and a ceramic measuring membrane, wherein the measuring membrane is joined with the platform pressure tightly by an active hard solder, or braze, wherein the method includes: providing the platform, the measuring membrane and the active hard solder, or braze, positioning the active hard solder, or braze, between the platform and the measuring membrane; melting the active hard solder, or braze, by irradiating the active hard solder, or braze, by a laser, wherein the irradiating of the active hard solder, or braze, occurs through the measuring membrane; and letting the active hard solder, or braze, solidify by cooling.

A MEMS sensor, including a substrate, and at least three functional layers, which are connected to the substrate on top of one another and spaced apart from one another. A first of the at least three functional layers is deflectably situated. A first electrode, which includes at least two areas being situated at the first functional layer. A first area of the first electrode together with a second electrode of a second of the at least three functional layers form a first capacitance, and a second area of the first electrode together with at least one area of a third electrode of a third functional layer form a second capacitance. The electrodes are situated in such a way that, upon a change in the distance of the electrodes of the first capacitance, a contrary change in the distance of the electrodes of the second capacitance takes place.

A pressure sensor assembly includes a pressure sensor, a pedestal and an electrically conductive header having a header cavity. The pressure sensor includes, an electrically conductive sensing layer having a sensor diaphragm, an electrically conductive backing layer having a bottom surface that is bonded to the sensing layer, an electrically insulative layer having a bottom surface that is bonded to a top surface of the backing layer, and a sensor element having an electrical parameter that changes based on a deflection of the sensor diaphragm in response to a pressure difference. The pedestal is bonded to the electrically insulative layer and attached to the header within the header cavity.