A deformable differential semiconductor sensor system of pressure and/or compressive displacement is provided. The pressure sensor system includes a deformable and elastic rubber substrate, first and second carbon nanotubes conductive layers, metal free phthalocyanine-carbon nanotubes composite semiconductive layers, first and second terminals on the carbon nanotubes conductive layers and a rubber cover for receiving inputs. The conductive and semiconductive layers of the sensor system are embedded in deformable substrates by using rubbing-in technology.

A pressure sensor is provided that uses an electric field effect. The pressure sensor includes a first electrode extending in a vertical direction and defining a core region, a second electrode disposed to entirely surround the first electrode, a first insulating layer interposed between the first and second electrodes, a ground electrode electrically insulated from the second electrode, the ground electrode being disposed to surround the second electrode and a membrane connected to the ground electrode and positioned to cover the first and second electrodes, and the membrane being provided to generate an electric field in an adjacent region together with the first and second electrodes. The particular arrangements described herein are configured to make the electric field distort when an object approaches thereto, enhancing sensitivity by measuring change in capacitance, pressure, and impedance.

A metal member with insulating film includes a metal member, an insulating film, and a reinforcement portion. The metal member includes a film formation surface and a connection surface facing in a different direction from the film formation surface and connecting to the film formation surface. The insulating film covers at least a part of the film formation surface and the connection surface over a connection position between the film formation surface and the connection surface. The reinforcement portion is formed along a periphery of the insulating film at the connection position and covers at least a part of the periphery of the insulating film from an opposite side to the metal member.

Provided are a pressure difference sensor, and a manufacturing method and an application thereof. A manner of bonding three layers of wafers is adopted, and the sensor includes an upper structure, an intermediate structure and a lower structure. Each of the upper structure and the intermediate structure is manufactured by a silicon-on-insulator (SOI) wafer, the lower structure is manufactured by patterned doped intrinsic silicon; and a lead pad of each of the upper electrode, and the intermediate electrode and the lower electrode is located on a corresponding one of three-stepped steps at a side of the pressure difference sensor. Annular through holes are formed around the upper electrode and the lower electrode. A constant capacitance of a capacitance signal outputted by an upper capacitor of the sensor by extending an electric field line path of the constant capacitor part.

Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.

A micromechanical component. The micromechanical component includes: a membrane; the membrane includes at least one reinforcement structure of a geometrically defined shape, which reinforces the membrane in a defined manner, in the region of at least one anchor structure and/or in the region of at least one connecting structure.

A pressure sensor assembly, which includes a pressure sensing element having a diaphragm, a plurality of piezoresistors connected to the diaphragm, and at least one layer of sealing glass connected to the diaphragm. The pressure sensor assembly also includes a base, a layer of sealing glass is connected to the base, and is configured to maximize the sensitivity of the plurality of piezoresistors via tailoring the side surfaces of the glass surface to control the deformable diaphragm. The layer of sealing glass includes a first recess portion, and a second recess portion formed as part of the layer of sealing glass on the opposite side of the layer of sealing glass as the first recess portion. One of the plurality of piezoresistors is partially surrounded by the first recess portion, and another of the plurality of piezoresistors is partially surrounded by the second recess portion.

A method of manufacturing a sensor set-up for determining at least one pressure of a fluid medium. The method includes: a) providing a blank of a sensor set-up including at least one pressure connection, the pressure connection including at least one pressure deformation element made up of at least one material suitable for induction; b) positioning at least one glass element onto a surface of the pressure deformation element; c) measuring at least one temperature of the pressure deformation element using at least one pyrometer; d) inducing a voltage in the pressure deformation element using at least one inductor in such a manner, that the glass element melts and a glass layer forms on the pressure deformation element; e) positioning a sensor element onto the glass layer in such a manner, that an integral bond forms between the sensor element and the glass layer.

A curved recess in a stopper includes a groove-pattern region and a groove-free region. When a sensor diaphragm reaches a bottom of the curved recess in the stopper, a groove-free region is divided into a ring-shaped first region with which a sensor diaphragm is in close contact and a ring-shaped second region disposed between an inner wall surface of a ring-shaped wall and the ring-shaped first region. The first region serves as a sealing region and the second region serves as a confinement region so that a pressure transmitting medium that remains in a space adjacent to the inner wall surface of the ring-shaped wall is confined in the confinement region, and abnormal deformation of the sensor diaphragm is prevented.

In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.