Method of Manufacturing A Semiconductor Transducer Device With Multilayer Diaphragm And Semiconductor Transducer Device With Multilayer Diaphragm

Abstract

In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.

Claims

1.-16. (canceled)

17. A method of producing a semiconductor transducer device, the method comprising: providing a semiconductor body; forming a sacrificial layer above a surface of the semiconductor body; applying a diaphragm on the sacrificial layer; and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises: applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.

18. The method according to claim 17, wherein reducing the roughness comprises polishing with a chemical-mechanical polishing (CMP).

19. The method according to claim 17, wherein the processed surface has a roughness profile with arithmetic average between 2 nm and 10 nm inclusive.

20. The method according to claim 17, wherein applying the first layer comprises applying tungsten.

21. The method according to claim 17, wherein applying the diaphragm further comprises applying a second layer on the processed surface.

22. The method according to claim 21, wherein applying the second layer comprises applying titanium and/or titanium nitride.

23. The method according to claim 17, wherein applying the diaphragm further comprises applying a third layer, wherein the first layer is applied on the third layer facing away from the semiconductor body.

24. The method according to claim 23, wherein applying the third layer comprises applying titanium and/or titanium nitride.

25. The method according to claim 17, further comprising: applying an electrode layer between the semiconductor body and the sacrificial layer; forming vias interconnecting the electrode layer and the semiconductor body; and forming further vias interconnecting the diaphragm and the semiconductor body.

26. The method according to claim 25, further comprising applying a cover layer between the semiconductor body and the electrode layer.

27. The method according to claim 17, further comprising applying an etch stop layer between the semiconductor body and the sacrificial layer.

28. The method according to claim 17, wherein the diaphragm is applied on a substantially flat surface of the sacrificial layer.

29. A semiconductor transducer device comprising: a semiconductor body; and a diaphragm having a first layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, and wherein the first layer comprises a processed surface with a predefined smoothness, with the processed surface facing away from the semiconductor body.

30. The semiconductor transducer device according to claim 29, wherein the semiconductor body further comprises an integrated circuit.

31. A pressure sensor comprising: the semiconductor transducer device according to claim 29.

32. A mobile device comprising: the pressure sensor according to claim 31.

33. A method of producing a semiconductor transducer device, the method comprising: providing a semiconductor body; forming a sacrificial layer above a surface of the semiconductor body; applying a diaphragm on the sacrificial layer; and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises: applying a third layer comprising at least one of titanium or titanium nitride, applying a first layer comprising tungsten, wherein the first layer is applied on a surface of the third layer facing away from the semiconductor body, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, wherein the processed surface has a roughness profile with arithmetic average between 2 nm and 10 nm inclusive, and patterning and structuring the first layer to form the openings.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The following description of figures of exemplary embodiments may further illustrate and explain aspects of the improved concept. Elements of the semiconductor transducer device with the same structure and the same effect, respectively, appear with equivalent reference symbols. Insofar as elements of the semiconductor transducer device correspond to one another in terms of their function in different figures, the description thereof is not repeated for each of the following figures.

[0042] FIG. 1 shows a cross section of an intermediate product of a semiconductor transducer device after an application of a first layer of a multilayer diaphragm;

[0043] FIG. 2 shows a cross section according to FIG. 1 after a step that reduces a roughness of a surface of the first layer;

[0044] FIG. 3 shows a cross section according to FIG. 2 after an application of a second layer of the diaphragm;

[0045] FIG. 4 shows a cross section according to FIG. 3 after the formation of openings in the diaphragm; and

[0046] FIG. 5 shows a cross section according to FIG. 4 after release of the diaphragm.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0047] FIG. 1 is a cross section of an intermediate product of a semiconductor transducer device, which may for example be employed in a pressure sensor. The semiconductor transducer device in this embodiment comprises a semiconductor body 1 comprising a substrate 1A, which may be silicon, for instance. The semiconductor body 1 may also include an integrated circuit 14, which may in particular be a CMOS circuit with active and passive circuitry. Such integrated circuits are known per se, and details of the integrated circuit 14, which depend on an individual application, are not shown in the figures. The integrated circuit 14 may especially be provided for an evaluation of signals from the transducer, such as a capacitance of the transducer.

[0048] A cover layer 2, which may include a wiring embedded in an inter-metal dielectric layer and/or a passivation, for instance, is applied on a surface of the semiconductor body 1. The inter-metal dielectric layer may comprise silicon dioxide, and the passivation may comprise a combination of silicon dioxide and silicon nitride, for instance. The part of the semiconductor transducer device that includes the semiconductor body 1 and the cover layer 2 may be similar to a conventional semiconductor device with an integrated circuit. The semiconductor transducer device differs from such a semiconductor device by an arrangement of transducer elements on a surface of the cover layer 2 facing away from the semiconductor body 1.

[0049] An electrode layer 3 may be arranged on the surface of the cover layer 2 and patterned and structured, for example via lithography and etching, in order to form a first electrode of a transducer, especially a capacitive transducer, for instance. The first electrode of such a transducer may be referred to as the bottom electrode. An etch stop layer 4 is arranged on a surface of the structured electrode layer 3 facing away from the semiconductor body 1. A sacrificial layer 5 is arranged on a surface of the etch stop layer 4 facing away from the semiconductor body 1. The etch stop layer 4 is made of a material with a significantly lower etch rate regarding a fluorine-based etchant compared to a material of the sacrificial layer 5. For example, the etch stop layer 4 comprises silicon nitride, such as silicon-rich silicon nitride, while the sacrificial layer comprises silicon or silicon dioxide.

[0050] The diaphragm 10 is arranged on a surface the sacrificial layer 5 facing away from the semiconductor body 1. The diaphragm 10 comprises a sequence of layers and may particularly include a first layer 7 and a third layer 6. The third layer 6 may be provided as a barrier layer and/or may facilitate the arrangement of the diaphragm 10 on the sacrificial layer 5. A material of the third layer 6 may be characterized by a larger adhesion to the sacrificial layer 5 compared to a material of the first layer 7. The third layer 6 may for example comprise titanium, titanium nitride, TiN, or a combination of titanium and TiN.

[0051] The first layer 7 of the diaphragm 10 may comprise a metal, which may e.g. be tungsten. The first layer 7 may be a uniform or homogeneous layer or a sequence of at least two individual layers of different materials. The first layer 7 may be referred to as the main layer of the diaphragm 10, for example constituting an upper electrode of a capacitive transducer device. In particular, the FIG. 1 shows the intermediate product of the semiconductor transducer device after applying the first layer 7, wherein an unprocessed surface 15 of the first layer 7 that is facing away from the semiconductor body 1 is characterized by a significant roughness, for example having a roughness profile with an arithmetic mean, R.sub.a, of around 20 nm.

[0052] Vertical electric interconnections 12 may be provided to connect the electrode layer 3 with terminals of circuitry of the semiconductor body 1. For example, these interconnections are realized by vias, such as through-substrate-vias, TSV. Further vertical electric interconnections 13 may be provided by further vias to interconnect the diaphragm 10, e.g. a top electrode formed by the third layer 7, with further terminals of circuitry of the semiconductor body 1.

[0053] FIG. 2 is a cross section according to FIG. 1 after reducing a roughness of the surface 15 of the first layer 7. Elements of the intermediate product shown in FIG. 2 that correspond to elements of the intermediate product shown in FIG. 1 are designated with the same reference numerals. Subsequent to applying the first layer 7, a roughness of its top surface 15, i.e. the surface facing away from the semiconductor body 1, is substantially reduced by a chemical-mechanical polishing, CMP, step that yields a processed surface 16 with predetermined smoothness. The CMP step improves the fabrication yield, as a multilayer diaphragm with reduced and predetermined surface roughness is less prone to fracture. The polishing step also helps to enhance the overall stress balance in the layer stack forming the diaphragm. It has been shown that reducing the surface roughness to Ra of around 5 nm already significantly improves the production yield of the transducer device. Using an appropriate slurry and polishing pad, this value can be achieved by employing a 10 s timed W CMP process.

[0054] FIG. 3 is a cross section according to FIG. 2 after an application of a second layer 8 of the diaphragm 10. Elements of the intermediate product shown in FIG. 3 that correspond to elements of the intermediate product shown in FIG. 2 are designated with the same reference numerals. Due to the processed surface 16 of the first layer, the application of the second layer 8 is substantially improved, i.e. the surface of the second layer 8 facing away from the semiconductor body 1 is likewise characterized by a reduced roughness compared to an application of the second layer on an unprocessed surface 15.

[0055] FIG. 4 is a cross section according to FIG. 3 after the formation of openings in the diaphragm 10. Elements of the intermediate product shown in FIG. 4 that correspond to elements of the intermediate product shown in FIG. 3 are designated with the same reference numerals. FIG. 4 shows said openings 11 in the diaphragm 10. The openings 11 are provided for a subsequent etching step, wherein an etchant is introduced in the openings 11 to attack and remove the material of the sacrificial layer 5.

[0056] FIG. 5 is a cross section according to FIG. 4 after the removal of the sacrificial layer 5, i.e. the embodiment of FIG. 5 may be regarded as the finalized transducer device. Elements of the intermediate product shown in FIG. 5 that correspond to elements of the intermediate product shown in FIG. 4 are designated with the same reference numerals. The sacrificial layer 5 can completely be removed. Alternatively, residues of the sacrificial layer 5 remain in between the further vias 13. The etching process stops on the etch stop layer 4. FIG. 5 shows the transducer device with the major portion of the diaphragm 10 released, so that the diaphragm 10 is suspended above the semiconductor body 1 and is free to deflect in response to an external cause, in particular when a pressure is applied. The diaphragm 10 may be connected to the semiconductor body 1 only by means of the further vias 13. Alternatively, the diaphragm 10 may be connected to the semiconductor body 1 by means of a clamping structure, for example.

[0057] The embodiments shown in the FIGS. 1 to 3 as stated represent exemplary embodiments of the semiconductor transducer device, therefore they do not constitute a complete list of all embodiments according to the improved concept. Actual transducer device configurations may vary from the embodiments shown in terms of shape, size and materials, for example.