It is desired to further reduce output errors which are caused by temperature characteristics. A sensor device is provided which includes a sense circuit which outputs a sense signal according to a magnitude of a detected physical quantity, an amplifier circuit which amplifies the sense signal, and a switching unit which switches at least one of a sensitivity of the sense circuit and an offset of the amplifier circuit discontinuously according to whether a temperature measurement value exceeds a threshold value.

A sensor apparatus includes: a sensor that includes a resistor bridge circuit; a temperature detection circuit that provides a first path and a second path; a voltage measurement portion that measures a voltage of each of the differential output terminals; a controller that causes the voltage measurement portion to measure the voltage of each of the two differential output terminals; and a calculator that calculates a difference between the voltages of the two differential output terminals to acquire temperature information of the sensor.

A bridge driver circuit applies a bias voltage across first and second input nodes of a resistive bridge circuit configured to measure a physical property such as pressure or movement. A sensing circuit senses drive current, bias current and common mode current for the bridge driver and sums the sensed currents to generate a source current. The source current is processed to determine a normalized resistance and temperature of the resistive bridge circuit and from which a temperature dependent sensitivity of the resistive bridge circuit is determined. A voltage output at first and second output nodes of the resistive bridge circuit is processed to determine a value of the physical property. This processing further involves applying a temperature correction in response to the determined temperature dependent sensitivity.

A device for measuring a strain of an object independently of temperature variations includes: at least one strain gauge that is attachable directly or indirectly to the object whose strain is to be measured; a first temperature sensor for measuring a temperature of the at least one strain gauge; read-out electronics for measuring a change of electrical resistance of the at least one strain gauge as a measured electrical resistance change, the read-out electronics including at least one fixed resistor whose value is relied upon when obtaining a value of the change of electrical resistance of the strain gauge as a result of the measurement, the read-out electronics being such that a temperature of the at least one fixed resistor is known and/or obtainable by measurement; and an evaluation unit for: correcting the measured electrical resistance change, and/or a strain of the strain gauge and/or the strain of the object.

A polymeric fluid sensor includes an inlet configured to receive fluid and an outlet. A polymeric tube is fluidically interposed between the inlet and the outlet and has a first sensing location with a first sidewall thickness and a second sensing location, spaced from the first sensing location, with a second sidewall thickness. A sleeve is disposed about the polymeric tube. The first sidewall thickness is less than the second sidewall thickness and a first sensing element is disposed at the first location and a second sensing element is disposed at the second location. In another example, the first and second sidewall thicknesses are the same and a fluid restriction is disposed within the polymeric tube between the first and second sensing locations.

Provided is a sensor element that can be manufactured without using hydrofluoric acid or hot phosphoric acid solution. A sensor element 100 includes a base material 10 and a semiconductor chip 20 bonded to the base material 10. The semiconductor chip 20 includes a semiconductor substrate 21, a support film 22 provided on a surface 21a of the semiconductor substrate 21, and a substrate chamber 23 provided in a concave shape on the semiconductor substrate 21 to form a cavity facing an element region 22A of the support film 22, an insulating layer 24 provided on a rear surface 21b of the semiconductor substrate 21, and a bonding layer 25 provided between the insulating layer 14 and the base material 10. The insulating layer 24 includes at least one of a silicon oxynitride film and a silicon oxide film. The bonding layer 25 includes a low-melting point glass.

An apparatus includes a casing defining a fluid flow channel, the casing including one or more diaphragms each defining a portion of the fluid flow channel, a strain gauge disposed on one of the one or more diaphragms, the strain gauge having a characteristic responsive to a pressure of fluid in the fluid flow channel, a temperature-sensitive circuit element disposed on one of the one or more diaphragms, the temperature-sensitive circuit element having a characteristic responsive to a temperature of the fluid in the fluid flow channel, and temperature compensation circuitry electrically coupled to the strain gauge and to the temperature-sensitive circuit element.

A sensor chip is used for multi-physical quantity measurement. This sensor chip comprises a substrate and at least two of the following sensors: a temperature sensor, a humidity sensor, or a pressure sensor, which are integrated onto the same substrate, wherein the pressure sensor consists of electrically interconnected resistive elements. The humidity sensor is an interdigitated structure. Thermistor elements are placed around the pressure sensor and the humidity sensor to form a temperature sensor. The temperature sensor has a resistance adjusting circuit. A microcavity is etched on the back of the substrate in a place on the opposite side pressure sensor's location. Also disclosed is a preparation method for a sensor chip used for multi-physical quantity measurement. This multi-physical quantity measurement single chip sensor chip has the advantages of low cost, low power consumption, easy fabrication, and wide applicability.

A device for measuring a strain of an object independently of temperature variations includes: at least one strain gauge that is attachable directly or indirectly to the object whose strain is to be measured; a first temperature sensor for measuring a temperature of the at least one strain gauge; read-out electronics for measuring a change of electrical resistance of the at least one strain gauge as a measured electrical resistance change, the read-out electronics including at least one fixed resistor whose value is relied upon when obtaining a value of the change of electrical resistance of the strain gauge as a result of the measurement, the read-out electronics being such that a temperature of the at least one fixed resistor is known and/or obtainable by measurement; and an evaluation unit for: correcting the measured electrical resistance change, and/or a strain of the strain gauge and/or the strain of the object.

A semiconductor device includes a strain gauge on a substrate, the strain gauge configured to measure a stress of the substrate; and a temperature sensor disposed within the substrate, the temperature sensor being decoupled from the stress of the substrate.