Monolithic integration of microelectromechanical systems (MEMS) sensors with complementary oxide semiconductor (CMOS) electronics for pressure sensors is a very challenging task. This is primarily due to the requirement for a very high quality thin diaphragm to provide the pressure dependent MEMS deformation that can be sensed and, when seeking absolute rather than relative pressure sensors, a sealed reference cavity. Accordingly, a new manufacturing process is established based upon back-etching and bonding of a monolithic absolute silicon carbide (SiC) capacitive pressure sensor. Beneficially, the process embeds the critical features of the MEMS within a shallow trench formed within the silicon substrate and then processing the CMOS circuit. The process further benefits as it maintains that those elements of the MEMS element fabrication process that are CMOS compatible are implemented concurrently with those CMOS steps as well as the metallization steps. However, the CMOS incompatible processing is partitioned discretely.

A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.

A pressure sensor includes a housing, a pressure chamber defined within the housing, and a pressure transducer. The pressure sensor also includes a header that seals the pressure chamber and supports the pressure transducer in the pressure chamber. A plurality of pins extend through respective openings in the header. The sensor pins have first ends electrically connected to the pressure transducer in the pressure chamber and second ends electrically connected to sensor electronics outside the pressure chamber. The pins are electrically insulated from the header. The header is configured so that the electrical insulation of at least one pin from the header is less than the electrical insulation of the remaining pins from the header.

A pressure sensor package includes a package lead frame including a molding plastic layer with a top surface and a plurality of lead frame units mounted in the molding plastic layer, a sidewall disposed on the top surface of the molding plastic layer and surrounding a receiving chamber, a pressure sensor module mounted on the top surface of the molding plastic layer and disposed in the receiving chamber, and a packaging silicone mounted in the receiving chamber to encapsulate the pressure sensor module.

A sensor device includes a printed circuit board (PCB) substrate having a top surface, a bottom surface, a slot between the top and bottom surfaces, and two holes through the top surface and reaching into the slot. The sensor device further includes a sensor chip mounted on the top surface of the PCB substrate and above one of the two holes. The sensor device further includes a molding compound covering the sensor chip and sidewall surfaces and the top surface of the PCB substrate.

A method for producing a micromechanical pressure sensor. The method includes: providing a MEMS wafer having a silicon substrate and a first cavity developed therein underneath a sensor diaphragm; providing a second wafer; bonding the MEMS wafer to the second wafer; and exposing a sensor core from the rear side; a second cavity being formed in the process between the sensor core and the surface of the silicon substrate, and the second cavity being developed with the aid of an etching process which is carried out using etching parameters that are modified in a defined manner.

A pressure measuring arrangement is proposed. The pressure measuring arrangement includes a first MEMS pressure sensor arranged on a carrier, and also a second MEMS pressure sensor arranged on the carrier. Furthermore, the pressure measuring arrangement includes an integrated circuit arranged on the carrier, the integrated circuit being coupled to the first MEMS pressure sensor and the second MEMS pressure sensor.

A pressure sensor includes a bearing region and a frame which is spatially separated from the bearing region, wherein a sensing element of the pressure sensor is produced on the bearing region. When the aforementioned pressure sensor is mounted on a package substrate, the stress from the package substrate or a circuit board can be isolated by a space between the bearing region and the frame to avoid unexpected deformation on the sensing element.

A sensor device includes a printed circuit board (PCB) substrate having a top surface, a bottom surface, a slot between the top and bottom surfaces, and two holes through the top surface and reaching into the slot. The sensor device further includes a sensor chip mounted on the top surface of the PCB substrate and above one of the two holes. The sensor device further includes a molding compound covering the sensor chip and sidewall surfaces and the top surface of the PCB substrate.

Sensor packages and methods of assembling a sensor in a sensor package are provided. A preferred embodiment comprises: a base including a sensor coupled to the base wherein the base has at least one electrical connection location and a first mechanical mating interface in the shape of an arc; an electronics package with at least one electrical connection location; and a ring coupled between the base and the electronics package wherein the ring electrically connects the at least one electrical connection location on the base and the at least one electrical connection location on the electronics package and wherein the base has a second mechanical mating interface in the shape of an arc that is reciprocal to the first mating interface.