The disclosure provides a wafer inspection method and wafer inspection apparatus. The method includes: receive scanning information of at least one wafer, wherein the scanning information includes a plurality of haze values; the scanning information is divided into a plurality of information blocks according to the unit block, and the feature value of each the plurality of information blocks is calculated according to the plurality of haze values included in each the plurality of information blocks; and converting the feature value into a color value according to the haze upper threshold and the haze lower threshold, and generating the color value corresponding to the at least one wafer according to the converted color value according to the feature value, the color graph displays the texture content of the at least one wafer.

Disclosed herein is a computer-implemented method for generating calibration data usable for analysis of a sample. The method includes: (i) identifying targets in an image frame pertaining to a scanned area of a sample; (ii) computing displacements of the targets relative to positions thereof as given by, or derived from, reference data of the scanned area; (iii) based at least on the computed target displacements, determining values of coordinate transformation parameters (CTPs) relating coordinates of the image frame to coordinates of the scanned area as given by, or derived from, the reference data; and (iv) using at least the CTPs to obtain displacements of multiple segments in the image frame, thereby generating a displacement mapping of the image frame or at least a part thereof.

Disclosed herein is a computer-implemented method for generating calibration data usable for analysis of a sample. The method includes: (i) identifying targets in an image frame pertaining to a scanned area of a sample; (ii) computing displacements of the targets relative to positions thereof as given by, or derived from, reference data of the scanned area; (iii) based at least on the computed target displacements, determining values of coordinate transformation parameters (CTPs) relating coordinates of the image frame to coordinates of the scanned area as given by, or derived from, the reference data; and (iv) using at least the CTPs to obtain displacements of multiple segments in the image frame, thereby generating a displacement mapping of the image frame or at least a part thereof.

Systems, methods, and devices are provided for the creation of predictable and accurate defects in a fiber tow of an Automated Fiber Placement (AFP) process, with such artificial defects being useful to support calibration of an in situ inspection system used in the AFP process. Various embodiments include methods for creating such artificial defects that support calibration of an in situ inspection system of an AFP system or process. Various embodiments may also include a defect stencils for an AFP system or process.

Systems, methods, and devices are provided for the creation of predictable and accurate defects in a fiber tow of an Automated Fiber Placement (AFP) process, with such artificial defects being useful to support calibration of an in situ inspection system used in the AFP process. Various embodiments include methods for creating such artificial defects that support calibration of an in situ inspection system of an AFP system or process. Various embodiments may also include a defect stencils for an AFP system or process.

A measurement apparatus includes:

plural light emitting units that generate irradiation light to be emitted to an object;

a light receiving unit that receives reflected light of the irradiation light that is projected to the object and reflected, and outputs a reflected light amount;

a moving unit that performs a relative movement so as to cause the object and the irradiation light to move relative to each other; ant

a controller that performs a control to execute a first measurement and a second measurement.

A measurement apparatus includes:

plural light emitting units that generate irradiation light to be emitted to an object;

a light receiving unit that receives reflected light of the irradiation light that is projected to the object and reflected, and outputs a reflected light amount;

a moving unit that performs a relative movement so as to cause the object and the irradiation light to move relative to each other; ant

a controller that performs a control to execute a first measurement and a second measurement.

Systems, devices and methods for calibrating or increasing the accuracy of light sensing devices. The methods can include calibrating a light sensing device with a calibration source that is adapted to mimic at least one representative spectrum.

Systems, devices and methods for calibrating or increasing the accuracy of light sensing devices. The methods can include calibrating a light sensing device with a calibration source that is adapted to mimic at least one representative spectrum.

The operational state of a surface inspection system for detecting defects on the surface of semiconductor wafers is monitored by: providing a reference wafer having defects of a particular number, size, and density on an examination surface; conducting a reference inspection of the reference wafer and at least one control inspection of the reference wafer by the surface inspection system, the position and size of defects on the examination surface being measured; identifying defects which, because of their position, are regarded as common defects of the reference inspection and of the control inspection; for each common defect, determining a size difference obtained from comparing its size from the reference inspection and from the control inspection; and assessing the operational state of the surface inspection system on the basis of the size differences.