Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

In one aspect, a method of assessing hydrophobicity of a target analyte is disclosed, which includes introducing a sin-gle-phase system containing a concentration of the target analyte into a mass spectrometer to acquire at least one mass signal associated with the target analyte, introducing a phase-separated system (e.g., a two-phase system) containing substantially the same concentration of the target analyte into the mass spectrometer to acquire at least one mass signal associated with said target analyte, and utilizing a ratio of the intensities of the mass signals to assess hydrophobicity of the target analyte.

In one aspect, a method of assessing hydrophobicity of a target analyte is disclosed, which includes introducing a sin-gle-phase system containing a concentration of the target analyte into a mass spectrometer to acquire at least one mass signal associated with the target analyte, introducing a phase-separated system (e.g., a two-phase system) containing substantially the same concentration of the target analyte into the mass spectrometer to acquire at least one mass signal associated with said target analyte, and utilizing a ratio of the intensities of the mass signals to assess hydrophobicity of the target analyte.

Practical implementation of Particle-Induced X-ray Emission (PIXE) on a focused ion beam apparatus or on a dual-beam apparatus comprising both focused-ion beam and scanning microscopy capabilities is described. Accordingly, an analytical method comprises: directing and focusing a beam of ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and detecting and measuring X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample.

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

A combined handheld XRF and LIBS system and method includes an XRF subsystem with an X-ray source operated at a fixed medium voltage and configured to deliver X-rays to a sample without passing through a mechanized filter and a detector for detecting fluoresced radiation from the sample. The LIBS subsystem includes a low power laser source for delivering a laser beam to the sample and a narrow wavelength range spectrometer subsystem for analyzing optical emissions from the sample. The X-ray source is operated at the fixed medium voltage to analyze the sample for a first group of elements, namely, transition and/or heavy metals. The low power laser source is operated to analyze the sample for a second group of elements the XRF subsystem cannot reliably detect, namely, C, Be, Li, Na, and/or B, and to analyze the sample for a third group of elements the XRF subsystem cannot reliably detect at the fixed voltage, namely, Al, Si, and/or Mg, or where the XRF subsystem would require higher tube voltage, namely Cd, Ag, In, Sn, Sb, and/or Ba; and/or rare earth elements.

A combined handheld XRF and LIBS system and method includes an XRF subsystem with an X-ray source operated at a fixed medium voltage and configured to deliver X-rays to a sample without passing through a mechanized filter and a detector for detecting fluoresced radiation from the sample. The LIBS subsystem includes a low power laser source for delivering a laser beam to the sample and a narrow wavelength range spectrometer subsystem for analyzing optical emissions from the sample. The X-ray source is operated at the fixed medium voltage to analyze the sample for a first group of elements, namely, transition and/or heavy metals. The low power laser source is operated to analyze the sample for a second group of elements the XRF subsystem cannot reliably detect, namely, C, Be, Li, Na, and/or B, and to analyze the sample for a third group of elements the XRF subsystem cannot reliably detect at the fixed voltage, namely, Al, Si, and/or Mg, or where the XRF subsystem would require higher tube voltage, namely Cd, Ag, In, Sn, Sb, and/or Ba; and/or rare earth elements.

A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure.

A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure.