A carrier grid with integrated gas delivery system for use in a charged particle beam system (CPB). The carrier grid has a body with an internal reservoir for storing a gas. A post extends from the body with an end for supporting a sample to be operated upon, and an outlet tip extends from the end of the post. A channel extends from the reservoir, through the post and ends in the outlet tip, where the outlet tip seals the stored gas in the body. Cutting the outlet tip near its base, with a focused ion beam (FIB) by example, will open the channel to the CPB chamber, allowing the prestored gas within the reservoir to escape. A FIB or electron beam directed at the junction of the sample positioned near the post will cause deposition and subsequent attachment of the sample to the post in presence of the gas.

Detector module designs for radiographic imaging include first and second layers of scintillator rods or pixel arrays oriented in first and second directions. The first and second directions are transversely oriented to define a light sharing region between the first and second layers. Encoding features may be disposed in, on or between the first and second layers, and configured to modulate propagation of optical signals therealong or therebetween.

Detector module designs for radiographic imaging include first and second layers of scintillator rods or pixel arrays oriented in first and second directions. The first and second directions are transversely oriented to define a light sharing region between the first and second layers. Encoding features may be disposed in, on or between the first and second layers, and configured to modulate propagation of optical signals therealong or therebetween.

A method of analyzing a light-emitting element is provided. The method analyzes an organic semiconductor element including an organic semiconductor layer including one or a plurality of layers between a pair of electrodes. The organic semiconductor element is analyzed with use of a step of separating one of the electrodes of the organic semiconductor element, a step of analyzing a stacked layer and/or a mixed state of the exposed organic semiconductor layer by a first mass analysis method, a step of forming a solution by eluting at least any one or a plurality of organic compounds included in layers in the organic semiconductor layer with a solvent, a step of isolating an organic compound included in the solution by liquid chromatography and analyzing the isolated organic compound by a second mass analysis method, a step of comparing a mass-to-charge ratio detected by the first mass analysis method and a mass-to-charge ratio detected by the second mass analysis method, and a step of measuring the physical properties of the isolated organic compound.

An object of the invention is to easily acquire an image of a position corresponding between each section in an imaging device that acquires an image of a plurality of sample sections. The imaging device according to the invention calculates, according to a correspondence relationship between a characteristic point and a first observation region in a first sample section, coordinates of a second observation region of a second sample section, and generates an observation image at the calculated coordinates (see FIG. 7B).

A method includes capturing a photon emission microscope (PEM) image of an integrated circuit (IC), and identifying emission sites in the PEM image, where the emission sites are associated with a leakage current. A set of common nets is found that connects multiple emission sites using layout data and/or netlist data in computer-aided design (CAD) data. From the layout data and/or netlist data, a critical net is identified from the set of common nets connecting a threshold number of emission sites. The critical net is cross-mapped, by a processor, tip netlist data in the CAD data. A particular device is identified from the netlist data that has an output pin connected to the critical net. The particular device identified from the netlist data is cross-mapped, by a processor, to the layout data, wherein the critical net connects at least two devices at the identified emission sites including the particular device.

A method includes capturing a photon emission microscope (PEM) image of an integrated circuit (IC), and identifying emission sites in the PEM image, where the emission sites are associated with a leakage current. A set of common nets is found that connects multiple emission sites using layout data and/or netlist data in computer-aided design (CAD) data. From the layout data and/or netlist data, a critical net is identified from the set of common nets connecting a threshold number of emission sites. The critical net is cross-mapped, by a processor, tip netlist data in the CAD data. A particular device is identified from the netlist data that has an output pin connected to the critical net. The particular device identified from the netlist data is cross-mapped, by a processor, to the layout data, wherein the critical net connects at least two devices at the identified emission sites including the particular device.

A method of analyzing a light-emitting element is provided.

The method analyzes an organic semiconductor element including an organic semiconductor layer including one or a plurality of layers between a pair of electrodes. The organic semiconductor element is analyzed with use of a step of separating one of the electrodes of the organic semiconductor element, a step of analyzing a stacked layer and/or a mixed state of the exposed organic semiconductor layer by a first mass analysis method, a step of forming a solution by eluting at least any one or a plurality of organic compounds included in layers in the organic semiconductor layer with a solvent, a step of isolating an organic compound included in the solution by liquid chromatography and analyzing the isolated organic compound by a second mass analysis method, a step of comparing a mass-to-charge ratio detected by the first mass analysis method and a mass-to-charge ratio detected by the second mass analysis method, and a step of measuring the physical properties of the isolated organic compound.

A radiation detector module including a scintillator element configured to generate optical signals in response to incident radiation. A photodetector is coupled to at least a first surface of the scintillator element, the photodetector configured to convert the optical signals into output characterizing the radiation. An acoustic array is coupled to at least a second surface of the scintillator element, the acoustic array configured to convert acoustic signals generated in the scintillator element into output characterizing acoustic energy deposited therein.

A radiation detector module including a scintillator element configured to generate optical signals in response to incident radiation. A photodetector is coupled to at least a first surface of the scintillator element, the photodetector configured to convert the optical signals into output characterizing the radiation. An acoustic array is coupled to at least a second surface of the scintillator element, the acoustic array configured to convert acoustic signals generated in the scintillator element into output characterizing acoustic energy deposited therein.