A multi-beam metrology system includes an illumination source configured to generate a beam array, an illumination sub-system to direct the beam array to a sample at an array of measurement locations, an imaging sub-system to image the array of measurement locations as an array of imaged spots in a detection plane, and a detection assembly to generate detection signal channels associated with each of the imaged spots. The detection assembly includes an array of detection elements configured to receive the imaged spots with separate detection elements, and one or more position detectors to measure positions of the imaged spots in the detection plane. The detection assembly further generates feedback signals for the imaging sub-system based on the measured positions of the imaged spots to adjust the positions of one or more of the imaged spots in the detection plane to maintain alignment of the array of detection elements.

A multi-beam metrology system includes an illumination source configured to generate a beam array, an illumination sub-system to direct the beam array to a sample at an array of measurement locations, an imaging sub-system to image the array of measurement locations as an array of imaged spots in a detection plane, and a detection assembly to generate detection signal channels associated with each of the imaged spots. The detection assembly includes an array of detection elements configured to receive the imaged spots with separate detection elements, and one or more position detectors to measure positions of the imaged spots in the detection plane. The detection assembly further generates feedback signals for the imaging sub-system based on the measured positions of the imaged spots to adjust the positions of one or more of the imaged spots in the detection plane to maintain alignment of the array of detection elements.

A method for attaching a prepared sample to a carrier in a focused ion beam chamber. The method includes reducing a temperature within the chamber to substantially below room temperature followed by moving the prepared sample adjacent to a substrate carrier surface. The temperature can be lowered sufficiently to establish a cryogenic condition in the chamber. Attachment of the prepared sample to the substrate carrier is done by controlling the focused ion beam to raster a target area of the surface in the absence of a gas deposition precursor, to sputter material onto the base of the sample and the substrate carrier surface, thereby binding the prepared sample to the substrate carrier.

A method for attaching a prepared sample to a carrier in a focused ion beam chamber. The method includes reducing a temperature within the chamber to substantially below room temperature followed by moving the prepared sample adjacent to a substrate carrier surface. The temperature can be lowered sufficiently to establish a cryogenic condition in the chamber. Attachment of the prepared sample to the substrate carrier is done by controlling the focused ion beam to raster a target area of the surface in the absence of a gas deposition precursor, to sputter material onto the base of the sample and the substrate carrier surface, thereby binding the prepared sample to the substrate carrier.

Detector module designs for radiographic imaging include first and second layers of scintillator rods or pixel arrays oriented in first and second directions. The first and second directions are transversely oriented to define a light sharing region between the first and second layers. Encoding features may be disposed in, on or between the first and second layers, and configured to modulate propagation of optical signals therealong or therebetween.

Detector module designs for radiographic imaging include first and second layers of scintillator rods or pixel arrays oriented in first and second directions. The first and second directions are transversely oriented to define a light sharing region between the first and second layers. Encoding features may be disposed in, on or between the first and second layers, and configured to modulate propagation of optical signals therealong or therebetween.

A multimodality imaging system and method for mineralogy segmentation is disclosed. Image datasets of the sample are generated for one or more modalities, including x-ray and focused ion beam scanning electron microscope (FIB-SEM) modalities. Mineral maps are then created using Energy Dispersive X-ray spectroscopy (EDX) from at least part of the sample covered by the image datasets. The EDX mineral maps are applied as a mask to the image datasets to identify and label regions of minerals within the sample. Feature vectors are then extracted from the labeled regions via feature generators such as Gabor filters. Finally, machine learning training and classification algorithms such as Random Forest are applied to the extracted feature vectors to construct a segmented image representation of the sample that classifies the minerals within the sample.

A system and a method for volume inspection of semiconductor wafers with increased throughput are configured for milling and imaging a reduced number or areas of appropriate cross-sections surfaces in an inspection volume and determining inspection parameters of the 3D objects from the cross-section surface images. The method and device can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.

A system and a method for volume inspection of semiconductor wafers with increased throughput are configured for milling and imaging a reduced number or areas of appropriate cross-sections surfaces in an inspection volume and determining inspection parameters of the 3D objects from the cross-section surface images. The method and device can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.

The invention relates to a method for mapping the crystal orientations of a polycrystalline material, the method comprising: receiving (21) a series of images of the polycrystalline material, which images are acquired by an acquiring device in respective irradiation geometries; estimating (22) at least one intensity profile for at least one point of the material from the series of images, each intensity profile representing the intensity associated with the point in question as a function of irradiation geometry; and determining (24) a crystal orientation for each point in question of the material by comparing (23) the intensity profile associated with said point in question to theoretical signatures of intensity profiles of known crystal orientations, which signatures are contained in a database.