Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.

Generating image data of an object using a particle beam includes arranging at least one mark in the object or in a support material in which the object is embedded, determining a first examination region, exposing the first examination region by removing material of at least one of: the object and the support material, guiding a first particle beam over the first examination region, and acquiring image data of the first examination region using at least one detector by detecting interaction particles and/or interaction radiation due to an interaction of the first particle beam with the first examination region. Generating image data of an object using a particle beam may also include introducing the object into a support material in such a way that the object is partly or completely surrounded by the support material. A second examination region of the object may be determined relative to the mark.

A multimodality imaging system and method for mineralogy segmentation is disclosed. Image datasets of the sample are generated for one or more modalities, including x-ray and focused ion beam scanning electron microscope (FIB-SEM) modalities. Mineral maps are then created using Energy Dispersive X-ray spectroscopy (EDX) from at least part of the sample covered by the image datasets. The EDX mineral maps are applied as a mask to the image datasets to identify and label regions of minerals within the sample. Feature vectors are then extracted from the labeled regions via feature generators such as Gabor filters. Finally, machine learning training and classification algorithms such as Random Forest are applied to the extracted feature vectors to construct a segmented image representation of the sample that classifies the minerals within the sample.

Provided is a living cell microbeam directional and quantitative irradiation imaging apparatus. The problem that qualitative analysis of the mechanism of action of biological cells irradiated cannot accurately study the mechanism of action of different irradiation doses on biological cells as the cell irradiation technology can be only used to perform qualitative irradiation on living biological cells is solved. The apparatus includes a vertical microbeam terminal, a living cell directional irradiation module, a wide-field microscopic module, a mode switching module, and a single-proton counting and radiation synchronous control module. The vertical microbeam terminal, the living cell directional irradiation module, the mode switching module and the wide-field microscopic module are sequentially matched, the mode switching module is connected to the single-proton counting and radiation synchronous control module, and the vertical microbeam terminal is matched with the single-proton counting and radiation synchronous control module.

Provided is a living cell microbeam directional and quantitative irradiation imaging apparatus. The problem that qualitative analysis of the mechanism of action of biological cells irradiated cannot accurately study the mechanism of action of different irradiation doses on biological cells as the cell irradiation technology can be only used to perform qualitative irradiation on living biological cells is solved. The apparatus includes a vertical microbeam terminal, a living cell directional irradiation module, a wide-field microscopic module, a mode switching module, and a single-proton counting and radiation synchronous control module. The vertical microbeam terminal, the living cell directional irradiation module, the mode switching module and the wide-field microscopic module are sequentially matched, the mode switching module is connected to the single-proton counting and radiation synchronous control module, and the vertical microbeam terminal is matched with the single-proton counting and radiation synchronous control module.

A method for using a Focused Ion Beam and/or Scanning Electron Microscope (FIB/SEM) for etching one or more alignment markers on a rock sample, the one or more alignment markers being etched on the rock sample using the FIB/SEM. The one or more alignment markers may further be deposited with a platinum alloy or other suitable compositions for increasing alignment marker visibility.

The invention relates to a method for mapping the crystal orientations of a polycrystalline material, the method comprising: receiving (21) a series of images of the polycrystalline material, which images are acquired by an acquiring device in respective irradiation geometries; estimating (22) at least one intensity profile for at least one point of the material from the series of images, each intensity profile representing the intensity associated with the point in question as a function of irradiation geometry; and determining (24) a crystal orientation for each point in question of the material by comparing (23) the intensity profile associated with said point in question to theoretical signatures of intensity profiles of known crystal orientations, which signatures are contained in a database.

A metal pattern inspection method which applies a pulsed voltage to a metallic pattern, sets a cycle of the pulsed voltage to be shorter than a scanning cycle in which a focused ion beam is swept, indicating only a region of a secondary charged particle image corresponding to a portion of the metallic pattern which is isolated by a wire breakage and to which the pulsed voltage is applied in the form of a first pattern created as a function of surface electrical potentials changing in level with time, detecting, as a disconnection, a boundary between the first pattern and a second pattern created as a function of surface electrical potentials not changing in level with time, and determining whether there is a breaking of or a short circuit in the metallic pattern based on the presence or absence of the disconnection.

The present disclosure provides a method for acquiring a target thickness of a hydrogen embrittlement-resistant layer of a neutron source target, a terminal, and a storage medium; the method includes: using a physical field fitting method, performing hydrogen diffusion performance fitting based on the deposition distribution and thermal performance fitting based on the energy distribution for the target, respectively, to correspondingly obtain hydrogen atom concentration distribution characteristic and temperature distribution characteristic corresponding to the current thickness; determining whether the hydrogen atom concentration distribution characteristic satisfies a preset condition of a hydrogen atom concentration field, and determining whether the temperature distribution characteristic satisfies a preset condition of a temperature field. if both two conditions are satisfied, then taking the current thickness as the target thickness of the hydrogen embrittlement-resistant layer.

The present disclosure provides a method for acquiring a target thickness of a hydrogen embrittlement-resistant layer of a neutron source target, a terminal, and a storage medium; the method includes: using a physical field fitting method, performing hydrogen diffusion performance fitting based on the deposition distribution and thermal performance fitting based on the energy distribution for the target, respectively, to correspondingly obtain hydrogen atom concentration distribution characteristic and temperature distribution characteristic corresponding to the current thickness; determining whether the hydrogen atom concentration distribution characteristic satisfies a preset condition of a hydrogen atom concentration field, and determining whether the temperature distribution characteristic satisfies a preset condition of a temperature field. if both two conditions are satisfied, then taking the current thickness as the target thickness of the hydrogen embrittlement-resistant layer.