Patent classifications
G01N27/14
MULTI-DIMENSIONAL MULTI-PARAMETER GAS SENSOR AND MANUFACTURING METHOD THEREFOR, AND GAS DETECTION METHOD
A gas sensor has a sensing structure that is used for generating, for a variety of gases, multiple corresponding electric signals. It has a plurality of measuring electrodes and a gas-sensitive film coating the measuring electrodes; and a micro-heating structure that is used for providing different heating temperatures for the sensing structure, and a silicon-based substrate and a heating layer disposed on the silicon-based substrate. The heating layer integrates heating electrodes of different sizes or different layouts to form a plurality of heating regions of different temperatures, and the plurality of measuring electrodes are respectively disposed in the corresponding heating regions. By integrating heating electrodes of different sizes or different layouts on a single micro-heating structure to form heating regions of different temperatures, a complex atmosphere detection function of a variety of sensing materials at different temperatures is achieved.
MULTI-DIMENSIONAL MULTI-PARAMETER GAS SENSOR AND MANUFACTURING METHOD THEREFOR, AND GAS DETECTION METHOD
A gas sensor has a sensing structure that is used for generating, for a variety of gases, multiple corresponding electric signals. It has a plurality of measuring electrodes and a gas-sensitive film coating the measuring electrodes; and a micro-heating structure that is used for providing different heating temperatures for the sensing structure, and a silicon-based substrate and a heating layer disposed on the silicon-based substrate. The heating layer integrates heating electrodes of different sizes or different layouts to form a plurality of heating regions of different temperatures, and the plurality of measuring electrodes are respectively disposed in the corresponding heating regions. By integrating heating electrodes of different sizes or different layouts on a single micro-heating structure to form heating regions of different temperatures, a complex atmosphere detection function of a variety of sensing materials at different temperatures is achieved.
AEROSOL GENERATING DEVICE COMPRISING SEMICONDUCTOR HEATERS
An aerosol-generating device includes an electrical power supply, a cavity structure configured to receive an aerosol-generating article, and a plurality of semiconductor heaters within the cavity structure. Each of the plurality of semiconductor heaters includes a substrate layer and a heating layer on the substrate layer. The heating layer is a continuous layer. The aerosol-generating device includes a controller configured to control a supply of electrical power from the electrical power supply to each of the plurality of semiconductor heaters.
Use Of A Silicone Rubber Composition For The Manufacture Of An Insulator For High Voltage Direct Current Applications
The invention relates to a silicone rubber composition having specific dielectric properties which can be used as insulator material in high voltage direct current applications and a method for the manufacture of cable accessories like cable joints. The invention comprises as well a method for the determination of the optimum dielectric properties and the related amount of dielectric active additives.
Use Of A Silicone Rubber Composition For The Manufacture Of An Insulator For High Voltage Direct Current Applications
The invention relates to a silicone rubber composition having specific dielectric properties which can be used as insulator material in high voltage direct current applications and a method for the manufacture of cable accessories like cable joints. The invention comprises as well a method for the determination of the optimum dielectric properties and the related amount of dielectric active additives.
Nanostructured Lanthanum Oxide Humidity Sensor
A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.
Nanostructured Lanthanum Oxide Humidity Sensor
A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.
Multifunctional heterojunction metal oxide gas sensor
A method of identifying a gas is provided. The method includes providing a gas sensor device comprising at least two stacked metal oxide layers, wherein a change in conductance of the gas sensor device in a presence of a gas varies with a temperature of the stacked metal oxide layers. The method includes bringing the gas into proximity with the stacked metal oxide layers. The method also includes measuring the conductance of the gas sensor device when the gas is in proximity with the stacked layers at multiple temperatures to generate a temperature-conductance profile. The method also includes identifying a gas of interest based on the temperature-conductance profile.
Multifunctional heterojunction metal oxide gas sensor
A method of identifying a gas is provided. The method includes providing a gas sensor device comprising at least two stacked metal oxide layers, wherein a change in conductance of the gas sensor device in a presence of a gas varies with a temperature of the stacked metal oxide layers. The method includes bringing the gas into proximity with the stacked metal oxide layers. The method also includes measuring the conductance of the gas sensor device when the gas is in proximity with the stacked layers at multiple temperatures to generate a temperature-conductance profile. The method also includes identifying a gas of interest based on the temperature-conductance profile.
MULTI-TEMPERATURE GAS SENSING
A gas sensor includes a plurality of sensing resistors that vary in resistance based on ambient temperature and the presence of certain gases, such as CO.sub.2 and H.sub.2O. The responses of each of the sensing resistors vary based on a base temperature of each of the sensing resistors. The base temperatures for each of the sensing resistors and configurations of the sensing resistors are selected to emphasize a response to a gas of interest (e.g., CO.sub.2) while de-emphasizing or canceling contributions from ambient temperature and gases that are not of interest (e.g., H.sub.2O).