Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.

The techniques relate to methods and apparatus for conductance measurement. A device includes a fluid chamber, at least one sensor element configured to sense an analyte, wherein the at least one sensor element is in fluid communication with the fluid chamber, and a set of one or more electrodes in fluid communication with the fluid chamber for sensing a conductance of a fluid in the fluid chamber.

A microfabricated electrochemical gas sensor is disclosed. The sensor includes electrodes produced from conductor layers, a capping layer, microcavities through the conductor layers and the capping layer, a cavity connecting the microcavities, and an electrolyte filling in the space created by the cavity and the microcavities in the substrate. The microcavities allow gases to pass through but retain the electrolyte through surface tension.

A carbon nanotube (CNT) ion-selective field effect transistor (IS-FET) integrated device is used to detect nitrate ion in water. The device is operated as an IS-FET sensor, holding the measured potential between the drain electrode and an external reference electrode constant with a potentiometric circuit. Transduction occurs by changes in the effective CNT film gate potential with changes in the phase boundary potential of an ion-selective membrane (ISM) film. Moreover, the nitrate ISM film makes the device highly selective towards nitrate sensing. This printable IS-FET nitrate sensor enables real-time and high-resolution measurements and recording of nitrate ion in water at low cost.

A method and apparatus for operating a gas sensor are disclosed. In an embodiment a method for operating a gas sensor includes providing, by at least one gas sensor element, a sensing signal and correcting, by a neural network, the sensing signal, wherein the neural network comprises an input layer, an output layer and at least one hidden layer, wherein the input layer comprises a given number k>1 of input neurons for each gas sensor element, and wherein a respective gas sensor element provides its sensing signal to one of the corresponding input neurons dependent on a measurement parameter applied to the at least one gas sensor element.

This transistor sensor includes a substrate, a channel layer provided over one surface of the substrate, and a solid electrolyte layer provided between the substrate and the channel layer or over a surface of the channel layer on an opposite side to the substrate side, in which the channel layer includes an inorganic semiconductor, the solid electrolyte layer includes an inorganic solid electrolyte, and at least a portion of either one or both of the channel layer and the solid electrolyte layer includes an exposed portion exposed to outside.

This transistor sensor includes a substrate, a channel layer provided over one surface of the substrate, and a solid electrolyte layer provided between the substrate and the channel layer or over a surface of the channel layer on an opposite side to the substrate side, in which the channel layer includes an inorganic semiconductor, the solid electrolyte layer includes an inorganic solid electrolyte, and at least a portion of either one or both of the channel layer and the solid electrolyte layer includes an exposed portion exposed to outside.

A high data rate integrated circuit, such as an integrated circuit including a large sensor array, may be implemented using clock multipliers in individual power domains, coupled to sets of transmitters, including a transmitter pair configuration. Reference clock distribution circuitry on the integrated circuit distributes a relatively low speed reference clock. In a transmitter pair configuration, each pair comprises a first transmitter and a second transmitter in a transmitter power domain. Also, each pair of transmitters includes a clock multiplier connected to the reference clock distribution circuitry, and disposed between the first and second transmitters, which produces a local transmit clock.

An apparatus includes a biosensor integrated circuit (IC) chip with sensing zones and/or well structures configured to receive a liquid with biological analytes. The chip includes a passivation layer with an opening over a channel layer and an array of graphene field effect transistors (gFETs) individually having a 2D graphene channel disposed on a dielectric oxide layer, a conductive drain, and a conductive source. A liquid gate is formed above the top surface of the graphene channel. The chip further includes reference electrodes formed in a metal layer, configured to contact the liquid, and disposed at a horizontal distance apart from the graphene channels. The individual gFETs are operable to enable a set of measurements to sense parameters of the biological analytes based on changes in a shape of Id-Vgs transconductance curves. A system and a method have similar structures and perform the functions of the apparatus.

A biosensor for measuring an electrical response from a biological sample. The biosensor includes a substrate, a passivation layer grown on a surface of the substrate, a patterned catalyst layer deposited on the passivation layer, and three electrodes grown on the patterned catalyst layer. The three electrodes include a working electrode, a counter electrode, and a reference electrode. The working electrode includes a first array of electrically conductive biocompatible nanostructures that is configured to be an attachment site for the biological sample. The counter electrode includes a second array of electrically conductive biocompatible nanostructures that is configured to acquire the electrical response from the working electrode. The reference electrode includes a third array of electrically conductive biocompatible nanostructures that is configured to adjust a specific voltage around the working and the counter electrodes.