A sensor device includes a substrate having a substrate surface, a first IDT electrode positioned on the substrate surface, a second IDT electrode positioned on the substrate surface, a waveguide, and a protective film. The waveguide is positioned on the substrate surface and between the first IDT electrode and the second IDT electrode. The waveguide includes a first immobilized layer positioned on the substrate surface and a second immobilized layer positioned on the first immobilized layer. The second immobilized layer is positioned inside an outer edge of the first immobilized layer as seen in a plan view.

A fluid measuring device for determining at least one characteristic property of a fluid includes a measuring tube having a fluid duct and a measuring section in which an area of a measuring tube wall is configured as a waveguide for surface acoustic waves which forms an interface to the fluid. At least two piezoelectric transducers are arranged in direct contact with an outer surface of the waveguide and one of which serves as a transmitter for exciting acoustic waves and at least one as a receiver for receiving acoustic waves. Acoustic waves excited by the transmitter can propagate as a volume wave through the fluid, and the piezoelectric transducers are configured to be elastically flexible while retaining their function in that the piezoelectric transducers have strip-shaped piezoelectric elements arranged parallel to each other, are rigid per se and between which a respective layer of an elastic material is arranged.

A fluid measuring device for determining at least one characteristic property of a fluid includes a measuring tube having a fluid duct and a measuring section in which the measuring tube is cylindrical on the inside and an area of a measuring tube wall is configured as a waveguide, and a transmitter for exciting acoustic waves in the waveguide and a receiver for receiving acoustic waves which are in direct contact with an outer surface of the waveguide, wherein acoustic waves excited by the transmitter are adapted to propagate as a volume wave through the fluid. The waveguide has an elongated waveguide path which extends at an acute angle to a longitudinal extension direction of the measuring tube and with a component in the circumferential direction, wherein in the area of the waveguide path, the measuring tube wall has a smaller wall thickness than in areas adjoining the waveguide path.

An cartridge is combined with a smart device which is capable of communicating with a network to perform a portable, fast, field assay of a small sample biological analyte. A closed microfluidic circuit for mixes the analyte with a buffer with functionalized magnetic beads capable of being specifically combined with the analyte. A detector communicates with the microfluidic circuit in which the mixed analyte, buffer and combined functionalized magnetic beads are sensed. A microcontroller is coupled to detector for controlling the detector and for data processing an output assay signal from the detector. A user interface communicates with the microcontroller for providing user input and for providing user output through the smart device to the network.

The acoustic waveguide has a flexible metal rod with a cylindrical waveguide rigidly attached to each end of the same through a conical acoustic concentrator. One cylindrical waveguide is capable of being attached to an electroacoustic transducer and the other cylindrical waveguide is capable of being attached to an acoustic oscillation receiver. The structure provides for the enhanced functional capabilities of the acoustic waveguide by utilizing it in devices operating under conditions of high temperature, radiation, strong electromagnetic interferences and other negative factors.

The invention relates to an ultrasonic measuring unit for attaching to a measuring instrument. The measuring instrument is designed in such a way that the measuring instrument can be arranged on a movement axis of a machine. When the ultrasonic measuring unit is arranged on the measuring instrument, an ultrasonic measurement can be carried out by means of the ultrasonic measuring unit. The ultrasonic measuring unit comprises a tubular sleeve and an elastic carrier element. The tubular sleeve surrounds the elastic carrier element. The elastic carrier element consists of a material that conducts ultrasonic waves. At a first end of the tubular sleeve, the elastic carrier element protrudes beyond an outer edge of the tubular sleeve. The tubular sleeve and the elastic carrier element are intended to contact, in particular directly, the surface to be measured, during a probing process of the measuring instrument.

A 1D ultrasonic transducer unit for material detection, comprising a housing having securing device for securing to a surface and having at least three discrete ultrasonic transducers designed to decouple sound waves with a consistent operating frequency between 20 kHz and 400 kHz in a gaseous medium, and a control unit designed to control each ultrasonic transducer individually, wherein two ultrasonic transducers, directly adjacent to one another, are spaced apart by a distance, the 1D ultrasonic transducer unit has a sound channel per ultrasonic transducer with an input opening, associated with exactly one respective ultrasonic transducer, and an output opening, the output openings are arranged along a straight line, a distance from the directly adjacent output opening corresponds at most to the full or half the wavelength in the gaseous medium and is smaller than the corresponding distance.

A system includes a sensor comprising a sensor bonding layer disposed on a surface of the sensor, wherein the sensor bonding layer is a metallic alloy. An inlay includes a planar outer surface, wherein the inlay may be disposed on a curved surface of a structure. A structure bonding layer may be disposed on the planar outer surface of the inlay, wherein the structure bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer. The inlay comprises at least one of a modulus of elasticity, a shape, a thickness, and a size configured to reduce strain transmitted to the sensor.

The present invention discloses ultrasonic nondestructive methods for pipe wall thickness measurement at high or low temperatures. An ultrasonic detection device comprises a first and a second ultrasonic waveguide. The waveguide length is selected according to the surface temperature of a pipe under inspection. A first piezoelectric plate causes generation of a plurality of ultrasonic excitation signals which is transmitted to the pipe through the first ultrasonic waveguide. The plurality of ultrasonic excitation signals has different group speeds when traveling along the first ultrasonic waveguide. The reflected ultrasonic wave signals are collected and transmitted to a second piezoelectric plate by the second ultrasonic waveguide. The pipe wall thickness is calculated using an ultrasonic wave signal which has the highest group speed. The first and second waveguides are arranged parallel and side by side. An isolation plate is disposed such that the first and second waveguides go through the plate perpendicularly.

A sensor apparatus capable of measuring an analyte with excellent sensitivity is provided. A sensor apparatus includes an element substrate; a detecting section disposed on an upper surface of the element substrate, the detecting element including a reaction section having an immobilization film to detect an analyte, a first IDT electrode configured to generate an acoustic wave which propagates toward the reaction section, and a second IDT electrode configured to receive the acoustic wave which has passed through the reaction section; and a protective film which covers the first IDT electrode and the second IDT electrode. The element substrate is configured so that a region where the reaction section is located is at a lower level than a region where the first IDT electrode is located and a region where the second IDT electrode is located.