A data generating method includes: an atomic model generating step of generating one or more three-dimensional atomic models corresponding to a nanomaterial to be measured; a three-dimensional data generating step of generating three-dimensional atomic level structure volume data corresponding to the nanomaterial to be measured based on the one or more three-dimensional atomic model; a tilt series generating step of generating a tilt series by simulating three-dimensional tomography for a plurality of different angles in a predetermined angle range for at least some of the three-dimensional atomic level structure volume data; and a three-dimensional atomic structure tomogram volume data generating step of generating a three-dimensional atomic structure tomogram volume data set by performing three-dimensional reconstruction on at least some of the three-dimensional atomic level structure volume data based on the tilt series.

There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles.

A system for X-ray topography, the system includes a source assembly, a detector assembly, a filter and a processor. The source assembly is configured to direct at least an X-ray beam to impinge, at an angle, on a first surface of a sample, the X-ray beam is divergent when impinging on the first surface. The detector assembly is configured to detect the X-ray beam that had entered the sample at the first surface, diffracted while passing through the sample and exited the sample at a second surface that is opposite to the first surface, and to produce an electrical signal in response to the detected X-ray beam. The filter is mounted between the source assembly and the first surface, and is configured to attenuate an intensity of a selected spectral portion of the X-ray beam. The processor is configured to detect one or more defects in the sample based on the electrical signal.

A device for determining the microstructure of a metal product during metallurgical production of the metal product, the device having at least one X-ray source, at least one X-ray detector and at least one accommodating chamber, inside which the X-ray source and/or the X-ray detector is/are arranged and which has at least one window which is transparent to X-ray radiation. To allow reliable determination of the microstructure of a metal product during the metallurgical production thereof, the device includes at least one cooling installation for actively cooling the accommodating chamber.

An x-ray inspection system including a cabinet containing an x-ray source, a sample support for supporting a sample to be inspected, and an x-ray detector; an air mover configured to force air into the cabinet through an air inlet above the sample support, where the air mover and cabinet are configured to force air through the cabinet from the air inlet past the sample support to an air outlet in the cabinet below the sample support, and an assembly for positioning the sample support relative to the x-ray source and x-ray detector. The sample support includes an upper surface extending in a horizontal plane and the sample positioning assembly includes a vertical positioning mechanism for moving the sample support in a vertical direction, orthogonal to the horizontal plane, and a first horizontal positioning mechanism for moving the sample support and vertical positioning mechanism in a first horizontal direction.

A method including inspecting, using an X-ray transmission image, internal defects in a TSV formed in a semiconductor wafer, and detecting the X-rays, and processing an X-ray transmission image. Therein, the detection of X-rays is configured such that: the detection azimuth of the X-rays, and the detection elevation angle of the X-rays relative to the X-ray source are determined on the basis of information on the arrangement interval, depth, and planar shape of structures formed in the sample. The angle of rotation of a rotating stage on which the sample is mounted is adjusted in accordance with the detection azimuth which has been determined, and the X-rays that have been transmitted through the sample are detected with the position of the detector set to the detection elevation angle which has been determined.

A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.

System and method for imaging an integrated circuit (IC). The imaging system comprises an x-ray source including a plurality of spatially and temporally addressable electron sources, an x-ray detector arranged such that incident x-rays are oriented normal to an incident surface of the x-ray detector and a three-axis stage arranged between the x-ray source and the x-ray detector, the three-axis stage configured to have mounted thereon an integrated circuit through which x-rays generated by the x-ray source pass during operation of the imaging system. The imaging system further comprises at least one controller configured to move the three-axis stage during operation of the imaging system and selectively activate a subset of the electron sources during movement of the three-axis stage to acquire a set of intensity data by the x-ray detector as the three-axis stage moves along a three-dimensional trajectory.

A method and apparatus for analysis of a specimen in a microscope are provided. A first survey is performed that collects analytical data from a region of interest on the specimen surface using a first set of conditions. A second survey is performed that collects additional analytical data from selected parts of the region of interest on the specimen surface using a second set of conditions, different from the first set of conditions. The analytical data from the first survey is used to select the parts used for data collection in the second survey and to decide the order in which they are used.

A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.