A system for monitoring and identifying states of a semiconductor device, the system including at least one acoustic sensor for sensing acoustic emission emitted by at least one semiconductor device operating at a voltage of less than or equal to 220 V, the at least one acoustic sensor outputting at least one acoustic emission signal and a signal processing unit for receiving the at least one acoustic emission signal from the at least one acoustic sensor and for analyzing the at least one acoustic emission signal, the signal processing unit providing an output based on the analyzing, the output being indicative at least of whether the at least one semiconductor device is in an abnormal operating state with respect to a normal operating state of the semiconductor device.

Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes projecting an optical pump pulse on a semiconductor device comprising a target region, such as to produce an acoustic pulse which propagates within the target region of the semiconductor device, wherein a wavelength of the pump pulse is at least two times greater than a lateral extent of a lateral structural feature of the semiconductor device along at least one lateral direction, projecting an optical probe pulse on the semiconductor device, such that the probe pulse undergoes Brillouin scattering off the acoustic pulse within the target region, detecting a scattered component of the probe pulse to obtain a measured signal, and analyzing the measured signal to obtain a depth-dependence of at least one parameter characterizing the lateral structural feature.

There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to be capable of transporting the substrate and comparing a waveform of sound data with a preset threshold value to detect an abnormality of the transfer; and failure detecting by picking up vibration of the transfer and comparing a waveform of vibration data with a preset threshold value to detect a failure of the transfer.

An ultrasonic inspection system determines whether or not a thermally conductive resin forming a thermally conductive resin layer is filled through a waveform change of an ultrasonic wave measured by transmitting the ultrasonic wave toward a portion of an edge of a bottom surface of a module frame from the outside.

A resonance detection system includes a vibration simulation mechanism and a vibration audio analysis device. The vibration simulation mechanism includes a mechanism body that accommodates a peripheral interface device, such as a notebook computer key input mechanical structure. The vibration simulation mechanism generates a vibration wave to the peripheral interface device generates a vibration audio signal in response to the vibration wave. The vibration simulation mechanism further includes a patch-type audio collector, such as a miniature auscultation radio patch, which is connected with the vibration audio analysis device. The patch-type audio collector is attached on the mechanism body containing the peripheral interface device. The vibration audio signal is collected by the patch-type audio collector. The vibration audio analysis device judges whether there is an abnormal resonance phenomenon in the vibration auto signal, which may be used for fabrication quality control of peripheral interface devices.

This wedge looseness inspector for a rotary electric machine includes: an inspector including a wedge striker having a tap hammer for striking a wedge, and a wedge vibration detector for detecting vibration of the wedge; and attraction portions connected to the inspector via connection members and being attractable to an outer circumferential surface of a stepped-down portion, wherein the attraction portions have, on an inner side in the axial direction, first attachments that allow adjustment of the attached position in the axial direction of the attraction portions or replacement thereof.

An ultrasonic bonding apparatus includes an ultrasonic bonding machine having an ultrasonic tool for applying an ultrasonic wave to a bonding target member mounted on a fixed object fixed to a jig, while pressing a bonding member against the bonding target member; and a bonding inspection apparatus for inspecting a bonding quality of the bonding target member and the bonding member. The bonding inspection apparatus includes: a bonded-state measuring device for detecting a vibration in the jig or a housing of the ultrasonic bonding machine equipped with the jig, to thereby output a detection signal; and a bonded-state determination device for determining, in a bonding process for the bonding target member and the bonding member, a bonded state between the bonding target member and the bonding member on the basis of the detection signal outputted by the bonded-state measuring device.

The invention relates to a wafer chuck for handling a wafer, in particular in a wafer process device, further preferably in a scanning acoustic microscope, with a fixing device for the wafer, wherein the fixing device has a free space for receiving the wafer and a holder with multiple wafer contact fingers, which are movable relative to the holder for a wafer. The wafer contact fingers are arranged annularly around the free space for the wafer, preferably in one plane. The wafer contact fingers can be moved in the direction of the free space for the wafer or can be moved away from the free space for the wafer. One actuation device for the wafer contact fingers is provided and, when the actuation device is actuated, the wafer contact fingers are moved or can be moved simultaneously.

Described herein are embodiments of methods and apparatus for determining the SoC and SoH a lithium ion battery and for restoring capacity to a lithium ion battery. Some embodiments provide a method and apparatus including an ultrasound transducer designed to measure characteristics of a lithium ion battery in order to determine the SoC and SoH of the lithium ion battery, and to disrupt the SSEI layer inside the lithium ion battery. Several other methods for determination of SoC and SoH and disruption of the SSEI layer are also described. Use of such methods and apparatus may be advantageous in assessing a state of the lithium ion battery, as well as rejuvenating a lithium ion battery and increasing its life span.

A system for monitoring and identifying states of a semiconductor device, the system including at least one acoustic sensor for sensing acoustic emission emitted by at least one semiconductor device operating at a voltage of less than or equal to 220 V. the at least one acoustic sensor outputting at least one acoustic emission signal and a signal processing unit for receiving the at least one acoustic emission signal from the at least one acoustic sensor and for analyzing the at least one acoustic emission signal, the signal processing unit providing an output based on the analyzing, the output being indicative at least of whether the at least one semiconductor device is in an abnormal operating state with respect to a normal operating state of the semiconductor device.