Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes obtaining measured signals of the sample and analyzing thereof to obtain a depth-dependence of at least one parameter characterizing the lateral structural feature. The measured signals are obtained by repeatedly: projecting a pump pulse on the sample, thereby producing an acoustic pulse propagating within the target region; Brillouin-scattering a probe pulse off the acoustic pulse within the target region; and detecting a scattered component of the probe pulse to obtain a measured signal. In each repetition the respective probe pulse is scattered off the acoustic pulse at a respective depth within the target region, thereby probing the target region at a plurality of depths. A wavelength of the pump pulse is at least about two times greater than a lateral extent of the lateral structural feature

Aspects of the disclosure provide a method including determining a measurement configuration for one or more piezoelectric devices in an electronic apparatus. The electronic apparatus includes an electronic device mounted on a substrate block using a bonding layer. The one or more piezoelectric devices including a first subset and a second subset are attached to one of the electronic device and the bonding layer. The method includes performing, based on the measurement configuration, a defect measurement on the electronic apparatus by causing the first subset to transmit and the second subset to receive one or more acoustic signals. The method includes determining whether at least one mechanical defect is located in at least one of (i) the bonding layer, (ii) the electronic device, (iii) the substrate block, (iv) interfaces of the electronic device, the bonding layer, and the substrate block based on the received one or more acoustic signals.

Systems and methods for inspecting or characterizing samples, such as by characterizing patterned features or structures of the sample. In an aspect, the technology relates to a method for characterizing a patterned structure of a sample. The method includes directing a pump beam to a first position on a surface of the sample to induce a surface acoustic wave in the sample and directing a probe beam to a second position on the sample, wherein the probe beam is affected by the surface acoustic wave when the probe beam reflects from the surface of the sample. The method also includes detecting the reflected probe beam, analyzing the detected reflected probe beam to identify a frequency mode in the reflected probe beam, and based on the identified frequency mode, determining at least one of a width or a pitch of a patterned feature in the sample.

This ultrasonic inspection device, for inspecting a packaged semiconductor device, is provided with: an ultrasonic transducer which outputs ultrasonic waves to a semiconductor device; a receiver (a reflection detection unit) which detects reflected waves of the ultrasonic waves reflected on the semiconductor device; a stage which moves the positions of the semiconductor device relative to the ultrasonic transducer; a stage control unit which controls driving of the stage; and an analysis unit which analyzes the reaction of the semiconductor device to the input of the ultrasonic waves from the ultrasonic transducer. The stage control unit controls the distance between the semiconductor device and the ultrasonic transducer on the basis of a peak occurring in time waveform of the reflected wave detected by the receiver.

A method and system for detecting imperfections on a surface of a touchscreen of an electrical device, comprising: swiping a test object, such as a fingertip, a fingernail or a pin, along at least a portion of the touchscreen; producing, by the touchscreen, an electric signal indicative of the test object's contact with the touchscreen; receiving an acoustic signal by an acoustic sensor, during the swipe of the test object along the touchscreen; analyzing, by a processor, at least one of the electric signal and received acoustic signal; and determining existence of imperfections on the touchscreen's surface based on the analysis.

A sensor apparatus comprising an acoustic assembly arranged to transmit an acoustic signal to a substrate and receive at least part of the acoustic signal after the acoustic signal has interacted with the substrate, a transducer arranged to convert the at least part of the acoustic signal to an electronic signal, and, a processor configured to receive the electronic signal and determine both a topography of at least part of the substrate and a position of a target of the substrate based on the electronic signal. The sensor apparatus may for part of a lithographic apparatus or a metrology apparatus.

A method of performing atomic force microscopy (AFM) measurements, uses an ultrasound transducer to transmit modulated ultrasound waves with a frequency above one GHz from the ultrasound transducer to a top surface of a sample through the sample from the bottom surface of the sample. Effects of ultrasound wave scattering are detected from vibrations of an AFM cantilever at the top surface of the sample. Before the start of the measurements, a drop of a liquid is placed on a top surface of the ultrasound transducer. The sample is placed on the top surface of the ultrasound transducer, whereby the sample presses the liquid in the drop into a layer of the liquid between the top surface of the ultrasound transducer and a bottom surface of the sample. The AFM measurements are started after a thickness of the layer of the liquid has stabilized.

A method includes positioning an end effector at a height lower than a height of a wafer. The end effector is moved to a position under the wafer. A wafer backside property of the wafer is detected by using a sensor on the end effector. The wafer backside property is analyzed to obtain an analysis result.

Battery testing systems and methods are disclosed. One system includes one or more test platforms and a processing system. Each test platform performs ultrasonic scans of batteries. During the scans, each test platform can place pressure upon and measure temperature and open circuit voltages of each battery, transmit ultrasound signals into each battery and generate transmitted signal data in response, detect ultrasound signals reflected by or transmitted through each battery in response to the transmitted ultrasound signals and generate received signal data in response. The processing system can quantify aspects of the signal data and present the aspects to one or more battery models, which compute and assign a state of charge (SOC) and a state of health (SOH) to each battery in response. For example, the processing system can be in a service provider network that receives and analyzes signal data sent from test platforms at different customer facilities.

A method of detecting sub-surface voids in a sample comprises positioning a probe adjacent to a first point on the sample, emitting an ultrasonic wave from the probe towards the sample, moving the probe towards the sample, measuring a shear force amplitude of a reflection of the ultrasonic wave at the probe as the probe moves towards the sample, creating an approach curve by plotting the measured shear force amplitude of the reflection of the ultrasonic wave as a function of a distance between the probe and the sample, and determining whether a sub-surface void exists at the first point on the sample based on a slope of the approach curve.