A sensor includes a movable element adapted for rotational motion about a rotational axis due to acceleration along an axis perpendicular to a surface of a substrate. The movable element includes first and second ends, a first section having a first length between the rotational axis and the first end, and a second section having a second length between the rotational axis and the second end that is less than the first length. A motion stop extends from the second end of the second section. The first end of the first section includes a geometric stop region for contacting the surface of the substrate at a first distance away from the rotational axis. The motion stop for contacting the surface of the substrate at a second distance away from the rotational axis. The first and second distances facilitate symmetric stop performance between the geometric stop region and the motion stop.

A method for temperature compensation of a MEMS sensor. The method includes: in a balancing step, a temperature gradient is produced by a thermal element and a first and a second temperature are determined at a first and a second temperature measurement point, wherein a deflection of a movable structure produced by the temperature gradient is measured and a compensation value is ascertained dependent on the first and second temperature and the deflection; in a measurement step, a physical stimulus is measured by way of a deflection of the movable structure and a third and fourth temperature is determined at the first and second temperature measurement points; in a compensation step, a measured value of the physical stimulus is ascertained dependent on the measured deflection, the third and fourth temperature and the compensation value. A method is also provided including: a regulation step, and a measurement step.

A micromechanical inertial sensor. The inertial sensor includes a first sensor element for measuring an inertial variable in a first frequency band, and a second sensor element for measuring a periodic acceleration in a second frequency band. The second frequency band is at least partially above the first frequency band.

A micromechanical inertial sensor. The inertial sensor includes a first sensor element for measuring an inertial variable in a first frequency band, and a second sensor element for measuring a periodic acceleration in a second frequency band. The second frequency band is at least partially above the first frequency band.

A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.

A method produces a micromechanical sensor element having a first electrode and a second electrode, wherein electrode wall surfaces of the first and the second electrodes are situated opposite one another in a first direction and form a capacitance, wherein one of the first electrode or the second electrode is movable in a second direction, in response to a variable to be detected, and a second one of the first electrode and the second electrode is fixed. The method includes producing a cavity in a semiconductor substrate, the cavity being closed by a doped semiconductor layer; producing the first and the second electrodes in the semiconductor layer, including modifying the electrode wall surface of the first electrode in order to have a smaller extent in the second direction than the electrode wall surface of the second electrode.

A circuit for operating a capacitive sensor configured to be operated alternately in a first mode over a first time interval and in a second mode over a second time interval. The circuit includes a GM stage configured to receive a sensor voltage of the capacitive sensor at a first input contact and convert the sensor voltage into a sensor current to charge a first boxing capacitor with the sensor current in the second time interval, an integrator that is configured to, in the second interval, integrate a voltage applied across the first boxing capacitor over its time curve and output a resulting output voltage at a first output, and a hold circuit configured to tap the output voltage of the integrator in the second interval and hold it as a hold voltage.

A circuit for operating a capacitive sensor configured to be operated alternately in a first mode over a first time interval and in a second mode over a second time interval. The circuit includes a GM stage configured to receive a sensor voltage of the capacitive sensor at a first input contact and convert the sensor voltage into a sensor current to charge a first boxing capacitor with the sensor current in the second time interval, an integrator that is configured to, in the second interval, integrate a voltage applied across the first boxing capacitor over its time curve and output a resulting output voltage at a first output, and a hold circuit configured to tap the output voltage of the integrator in the second interval and hold it as a hold voltage.

An inertial sensor includes: a substrate; a fixing part arranged at one surface of the substrate; a moving element having an opening and configured to swing about a rotation axis along a first direction; a support beam supporting the moving element as the rotation axis in the opening of the moving element; and a support part supporting the support beam. The support part includes a first part fixed to the fixing part, and a second part formed only of a part not fixed to the fixing part. A length in the first direction of the second part is longer than a length in the first direction of the first part.

An inertial sensor includes: a substrate; a fixing part arranged at one surface of the substrate; a moving element having an opening and configured to swing about a rotation axis along a first direction; a support beam supporting the moving element as the rotation axis in the opening of the moving element; and a support part supporting the support beam. The support part includes a first part fixed to the fixing part, and a second part formed only of a part not fixed to the fixing part. A length in the first direction of the second part is longer than a length in the first direction of the first part.