The present invention provides a surface plasmon-optical-electrical hybrid conduction nano heterostructure and a preparation method therefor. The structure includes an exciting light source, a semiconductor nano-structure array, a two-dimensional plasmonic micro-nano structure, a sub-wavelength plasmon polariton guided wave, an emergent optical wave, a one-dimensional plasmonic micro-nano structure, a wire, a metal electrode, a conductive substrate, a probe molecule, an atomic-force microscopic conductive probe and a voltage source. The method achieves a semiconductor seed crystal with controllable distribution and density by controlling free metal ions, air, water or oxygen on a metal substrate to achieve highly uniform control of the seed crystal, and then strictly controls a length-to-diameter ratio and distribution of a semiconductor structure by continuous growth. Therefore, a new nano optics platform is provided for studying various novel effects produced by interaction between light and substances.

The present invention provides a surface plasmon-optical-electrical hybrid conduction nano heterostructure and a preparation method therefor. The structure includes an exciting light source, a semiconductor nano-structure array, a two-dimensional plasmonic micro-nano structure, a sub-wavelength plasmon polariton guided wave, an emergent optical wave, a one-dimensional plasmonic micro-nano structure, a wire, a metal electrode, a conductive substrate, a probe molecule, an atomic-force microscopic conductive probe and a voltage source. The method achieves a semiconductor seed crystal with controllable distribution and density by controlling free metal ions, air, water or oxygen on a metal substrate to achieve highly uniform control of the seed crystal, and then strictly controls a length-to-diameter ratio and distribution of a semiconductor structure by continuous growth. Therefore, a new nano optics platform is provided for studying various novel effects produced by interaction between light and substances.

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.

Embodiments relate to the design of an electronic device capable of preventing a lateral motion between a first body and a second body. The device comprises a first body comprising one or more atomic force microscopy (AFM) tips protruding from a first surface of the first body. The device further comprises a second body comprising one or more electrical contacts on a second surface of the second body. The second surface faces the first surface. The one or more electrical contacts pierced by the AFM tips of the first surface to prevent a lateral motion between the first body and the second body.

Embodiments relate to the design of an electronic device capable of preventing a lateral motion between a first body and a second body. The device comprises a first body comprising one or more atomic force microscopy (AFM) tips protruding from a first surface of the first body. The device further comprises a second body comprising one or more electrical contacts on a second surface of the second body. The second surface faces the first surface. The one or more electrical contacts pierced by the AFM tips of the first surface to prevent a lateral motion between the first body and the second body.

A scanning probe microscope and method of operating the microscope uses a resonant material between a metallic probe tip and a surface of a sample with at least one material having a dielectric constant . When electromagnetic radiation from a light source is transmitted to an interface between the metallic probe tip and the sample, absorption of the electromagnetic radiation by the resonant sensor material that is dependent on the dielectric constant of the at least one material of the sample is detected.

Provided is a scanning probe microscope, and in particular, a scanning probe microscope capable of scanning a large area using a probe including a plurality of conductive tips and capable of simply generating a surface image of a sample with high resolution by recognizing only two binary states of contact/non-contact between the conductive tips and a surface of the sample.

Provided is a scanning probe microscope, and in particular, a scanning probe microscope capable of scanning a large area using a probe including a plurality of conductive tips and capable of simply generating a surface image of a sample with high resolution by recognizing only two binary states of contact/non-contact between the conductive tips and a surface of the sample.

A needle-shaped body protrudes from a cantilever made of Si. Furthermore, the rear face of the cantilever is coated with aluminum (first metal) having a Fermi level higher than that of Si. The cantilever is dipped into an aqueous silver nitride solution containing the ions of Ag serving as a second metal. The electrons of Si flow out to the aqueous silver nitride solution due to the existence of the aluminum, and Ag nanostructures are precipitated at the tip end of the needle-shaped body. A probe for tip-enhanced Raman scattering in which the Ag nanostructures are fixed to the tip end of the needle-shaped body is manufactured. The sizes and shapes of the Ag nanostructures can be controlled properly by adjusting the concentration of the aqueous silver nitride solution and the time during which the cantilever is dipped into the aqueous silver nitride solution.