Patent classifications
G01Q60/40
Compact probe for atomic-force microscopy and atomic-force microscope including such a probe
A probe for atomic force microscopy comprises a tip for atomic force microscopy oriented in a direction referred to as the longitudinal direction and protrudes from an edge of a substrate in the longitudinal direction, wherein the tip is arranged at one end of a shuttle attached to the substrate at least via a first and via a second structure, which structures are referred to as support structures, at least the first support structure being a flexible structure, extending in a direction referred to as the transverse direction, perpendicular to the longitudinal direction and anchored to the substrate by at least one mechanical linkage in the transverse direction, the support structures being suitable for allowing the shuttle to be displaced in the longitudinal direction. An atomic force microscope comprising at least one such probe is also provided.
DETECTION SYSTEMS IN SEMICONDUCTOR METROLOGY TOOLS
A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system , a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.
DETECTION SYSTEMS IN SEMICONDUCTOR METROLOGY TOOLS
A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system , a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.
HIGH-FREQUENCY ENHANCED ELECTROCHEMICAL STRAIN MICROSCOPE AND HIGH-FREQUENCY ENHANCED ELECTROCHEMICAL STRAIN MICROSCOPY USING THE SAME
A high-frequency enhanced electrochemical strain microscope (ESM) according to the present invention is configured to map an amount of local ESM response generated by applying a first AC voltage to a surface of a sample with a tip portion of a probe brought into contact with the surface of the sample. The high-frequency enhanced electrochemical strain microscope includes an AC voltage source configured to apply a second AC voltage to be superimposed on the first AC voltage and having a frequency higher than a frequency of the first AC voltage.
HIGH-FREQUENCY ENHANCED ELECTROCHEMICAL STRAIN MICROSCOPE AND HIGH-FREQUENCY ENHANCED ELECTROCHEMICAL STRAIN MICROSCOPY USING THE SAME
A high-frequency enhanced electrochemical strain microscope (ESM) according to the present invention is configured to map an amount of local ESM response generated by applying a first AC voltage to a surface of a sample with a tip portion of a probe brought into contact with the surface of the sample. The high-frequency enhanced electrochemical strain microscope includes an AC voltage source configured to apply a second AC voltage to be superimposed on the first AC voltage and having a frequency higher than a frequency of the first AC voltage.
Conductive probe, electrical property evaluating system, scanning probe microscope, conductive probe manufacturing method, and electrical property measuring method
A conductive probe includes a protruding portion provided on an elastic member, a conductive metal film covering at least a tip of the protruding portion; and an insulating thin film covering the conductive metal film provided on the tip of the protruding portion.
PROBE MANUFACTURING METHOD AND PROBE
A needle-shaped body protrudes from a cantilever made of Si. Furthermore, the rear face of the cantilever is coated with aluminum having a Fermi level higher than that of Si. The cantilever is dipped into an aqueous silver nitride solution containing the ions of Ag serving as a second metal. The electrons of Si flow out to the aqueous silver nitride solution due to the existence of the aluminum, and Ag nanostructures are precipitated at the tip end of the needle-shaped body. A probe for tip-enhanced Raman scattering in which the Ag nanostructures are fixed to the tip end of the needle-shaped body is manufactured. The sizes and shapes of the Ag nanostructures can be controlled properly by adjusting the concentration of the aqueous silver nitride solution and the time during which the cantilever is dipped into the aqueous silver nitride solution.
PROBE MANUFACTURING METHOD AND PROBE
A needle-shaped body protrudes from a cantilever made of Si. Furthermore, the rear face of the cantilever is coated with aluminum having a Fermi level higher than that of Si. The cantilever is dipped into an aqueous silver nitride solution containing the ions of Ag serving as a second metal. The electrons of Si flow out to the aqueous silver nitride solution due to the existence of the aluminum, and Ag nanostructures are precipitated at the tip end of the needle-shaped body. A probe for tip-enhanced Raman scattering in which the Ag nanostructures are fixed to the tip end of the needle-shaped body is manufactured. The sizes and shapes of the Ag nanostructures can be controlled properly by adjusting the concentration of the aqueous silver nitride solution and the time during which the cantilever is dipped into the aqueous silver nitride solution.
METHOD OF REMOVING AND COLLECTING PARTICLES FROM PHOTOMASK AND DEVICE FOR REMOVING AND COLLECTING PARTICLES THEREFROM
The inventive concept provides a method of removing and collecting particles from a photomask including fabricating the photomask on a substrate, generating a first map indicating locations of particles on a surface of the photomask by inspecting the surface of the photomask using a probe tip, vertically moving the probe tip to a first vertical height that is lower than a height of the particle, horizontally moving the probe tip parallel to the surface of the photomask at the first vertical height, generating a second map indicating locations of particles on the surface of the photomask using the probe tip, vertically moving the probe tip to a second vertical height that is lower than the first vertical height, and horizontally moving the probe tip parallel to the surface of the photomask at the second vertical height.
Tip enhanced laser assisted sample transfer for biomolecule mass spectrometry
Disclosed are various embodiments for transferring molecules from a surface for mass spectrometry and other sample analysis methods, and the like. A laser is focused onto a tip of an atomic force microscope to remove and capture a quantity of molecules from the surface, so they can be transferred to a mass spectrometer or another instrument for analysis.