A permittivity sensor, for determining an image of a distribution of permittivity of a material of an object in a scene, comprising an input interface, a hardware processor, and an output interface is provided. The input interface is configured to accept phaseless measurements of propagation of a known incident field through the scene and scattered by the material of the object in the scene. The hardware processor is configured to solve a multi-variable minimization problem over unknown phases of the phaseless measurements and unknown image of the permittivity of the material of the object by minimizing a difference of a nonlinear function of the known incident field and the unknown image with a product of known magnitudes of the phaseless measurements and the unknown phases. Further, the output interface is configured to render the permittivity of the material of the object provided by the solution of the multi-variable minimization problem.

An electrical equipment includes a first load configured for a nominal use of the equipment, at least one first metal screen, a sensor configured to measure a quantity characteristic of the first load, and a power supply conductor, wherein the first load and the at least first metal screen are linked electrically to the power supply conductor, and in that the equipment also comprises a comparator configured to compare measurements from the sensor to detect a dormant failure of the at least first metal screen.

A complex dielectric sensor includes at least two voltage dividers to measure voltage amplitudes in a circuit of at least two impedances connected to a transducer probe. The impedances are configured to reduce amplification of raw error using relatively simple geometric calculations based on mapping the voltage amplitudes as a pair of intersecting circles in a complex admittance space. Instrument sensitivity can be optimized by selecting impedances with moduli in the complex admittance space that are similar in magnitude to the modulus of the sample admittance and by selecting impedances that cause characteristic directions of the voltage dividers (relative to the sample admittance in the complex admittance space) to be oriented as close to perpendicular to each other as possible.

Non-liquid immersed transformers and methods of measuring aging degree of the transformers' insulation are disclosed. The transformers comprise a solid insulation inside the conductive coil and one or more floating electrodes in the solid insulation. At least a part of the conductive coil and the one or more floating electrodes may form one or more capacitive elements, respectively. An electrical parameter, e.g. complex permittivity, of the capacitive element is measured and the aging degree is calculated as a function of the electrical parameter measurement.

A method includes forming a dummy pattern over test region of a substrate; forming an interlayer dielectric (ILD) layer laterally surrounding the dummy pattern; removing the dummy pattern to form an opening; forming a dielectric layer in the opening; performing a first testing process on the dielectric layer; performing an annealing process to the dielectric layer; and performing a second testing process on the annealed dielectric layer.

The present disclosure relates to systems and methods for measuring oil/water content in oil-water mixtures, regardless of the salinity of the mixture and regardless of air in the sensor pipe. In some embodiments, the oil content is measured using a dielectric sensor. It is determined whether the oil content is above or below a threshold. If the oil content is above the threshold, the oil content is reported using the measurement from the dielectric sensor. If the oil content is below the threshold, the oil content is reported using the measurement from the eddy current sensor. In some embodiments, which improve performance when there is air in the sensor pipe, two dielectric sensors with different geometries are used instead of the one dielectric sensor.

A method for calculating the dielectric constant of particle-dispersed composite materials that enables an easy evaluation of dispersibility. The composite material is assumed as a cell combination 10 in which unit cells 1 having a length a are combined together in an x-axis, a y-axis, and a z-axis direction and which has a length 1 in the x-axis direction, a length m in the y-axis direction, and a length n in the z-axis direction, the cell combination 10 is created in which a particle element or a medium element is assigned to each of the unit cells 1 Layers have a thickness d in the z-axis direction are combined and layered in the z-axis direction and assigning a capacitance C.sub.Layer,h of each of the layers represented by Formula 1 below to Formula 2 to determine a relative dielectric constant .sub.Total. $\begin{array}{c}{C}_{\mathrm{Layer},h}={\{\underset{j=1}{\overset{.Math.m/a.Math.}{.Math.}}\underset{i=1}{\overset{.Math.l/a.Math.}{.Math.}}{(\underset{k=1}{\overset{.Math.d}{.Math.}}}^{}}^{}\end{array}$

A differential capacitive probe for measuring contact resistance, the differential capacitive probe including a frame, an end effector extending from the frame, a first capacitive pad coupled to the frame so as to at least partially circumscribe the end effector, and a second capacitive pad coupled to the frame so as to be radially spaced, relative to the end effector, from the first capacitive pad and to at least partially circumscribe the end effector, wherein a contact surface area of the first capacitive pad is substantially the same as another contact surface of the second capacitive pad.

A method for testing a semiconductor structure includes forming a dielectric layer over a test region of a substrate. A cap layer is formed over the dielectric layer. The dielectric layer and the cap layer are annealed. The annealed cap layer is removed. A ferroelectricity of the annealed dielectric layer is in-line tested.

We disclose an electrically controllable RF-circuit element that includes an electrochromic material. In an example embodiment, the electrically controllable RF-circuit element is configured to operate as a phase shifter whose phase-shifting characteristics can be changed using a dc-bias voltage applied to a multilayered structure containing a layer of the electrochromic material.