The method for measuring of quick changes of low surface conductivity of dielectrics under electromagnetic interference of line voltage is based on a comparison measurement on a voltage divider and synchronization of measuring pulses with periodic sinusoidal course of interference when voltage with pre-set parameters of square pulse is brought to the tested dielectric surface and potential is sampled in the voltage divider consisting of the measured dielectric surface and a resistor with preselected resistivity in certain time intervals both before application of the measuring pulse and immediately before its end, and then based on a difference between the values measured using a differential amplifier, the value corresponding to that measured without effect of electromagnetic interference 60 Hz is derived and the result is the possibility to measure quick changes of low surface conductivity of dielectric surface.

A method for testing a semiconductor structure includes forming a dielectric layer over a test region of a substrate. A cap layer is formed over the dielectric layer. The dielectric layer and the cap layer are annealed. The annealed cap layer is removed. A ferroelectricity of the annealed dielectric layer is in-line tested.

A permittivity measuring method includes measuring a set of phases at sampling frequencies of at least three points in each of a first-half portion and a second-half portion of a phase characteristic of electromagnetic waves that passed through a measurement target, if the mode of the phase changes of both sets of phases belongs to a phase group in which change of the at least three points in the first half and change of at least three points in the second half are both monotonic change, maximal values, or minimal values, calculating the permittivity using the phase slope of the phases in the first-half portion and the phases in the second-half portion, and if the mode of the phase changes does not belong to the phase group, calculating the permittivity by fitting the phases of either the first half or the second half to a quadratic function.

An evaluation method for insulation performance includes: a step of applying a DC voltage to a first insulator and measuring an integration value of a current flowing through the first insulator from a start of application of the DC voltage after a prescribed time period; a step of applying a DC voltage to the second insulator on an applying condition that is identical to that in the step and measuring an integration value of a current flowing through the second insulator from a start of application of the DC voltage after a prescribed time period; and a step of comparing (i) a first graph obtained in the step and (ii) a second graph obtained in the step , to evaluate a difference between insulation performances of the insulators.

A sensor device for monitoring dielectric strength of a dielectric fluid has a sensor body which supports a sensitive part (SGi), designed for contact with the dielectric fluid. The sensitive part (SGi) comprises at least one pair of electrodes (E1, E2) having respective surface portions arranged at a predefined micrometric or sub-micrometric distance, to define therebetween at least one detection gap between which part of the dielectric fluid is suitable to seep in. The sensor device has a circuit arrangement comprising: means for generating an electric field between the two electrodes of the at least one pair of electrodes (E1, E2) starting from a known supply voltage, andmeans (V) for measuring a voltage representative of possible occurrence of an electric discharge between the two electrodes of the at least one pair of electrodes (E1, E2) through the dielectric fluid (5) present in the at least one detection gap (G), following generation of the electric field.

An electrode includes a conductor, an insulator, and a housing. The insulator is positioned at least partially around the conductor. The housing is positioned at least partially around the conductor. An upper surface of the insulator may be at least partially concave, an outer surface of the housing may have a groove formed therein, or both.

A film structure includes a first metal layer, a second metal layer, and an insulation layer located between the first metal layer and the second metal layer. In at least a portion of an edge region of the film structure, the first metal layer extends outwards relative to an edge of the insulation layer by a first predetermined length, and the insulation layer extends outwards relative to an edge of the second metal layer by a second predetermined length. In this way, when the film structure is measured, a fall value between the surface, adjacent to the second metal layer, of the insulation layer and the surface, adjacent to the insulation layer, of the first metal layer is measured by means of a motion trajectory of the measuring probe at the time of ascending or descending, thereby obtaining a more accurate thickness value of the insulation layer.

We disclose an electrically controllable RF-circuit element that includes an electrochromic material. In an example embodiment, the electrically controllable RF-circuit element is configured to operate as a phase shifter whose phase-shifting characteristics can be changed using a dc-bias voltage applied to a multilayered structure containing a layer of the electrochromic material.

Methods and test structures for testing the reliability of a dielectric material. The test structure may include a first row of contacts and a line comprised of a conductor. The line is laterally spaced in a direction at a minimum distance from the first row of contacts. The test structure further includes a second row of contacts laterally spaced in the direction from the first row of contacts by a distance equal to two times a minimum pitch. The line is laterally positioned between the first row of contacts and the second row of contacts.

A method for calculating the dielectric constant of particle-dispersed composite materials that enables an easy evaluation of dispersibility. The composite material is assumed as a cell combination 10 in which unit cells 1 having a length a are combined together in an x-axis, a y-axis, and a z-axis direction and which has a length 1 in the x-axis direction, a length m in the y-axis direction, and a length n in the z-axis direction, the cell combination 10 is created in which a particle element or a medium element is assigned to each of the unit cells 1 Layers have a thickness d in the z-axis direction are combined and layered in the z-axis direction and assigning a capacitance C.sub.Layer,h of each of the layers represented by Formula 1 below to Formula 2 to determine a relative dielectric constant ?.sub.Total.

[00001]$\begin{array}{cc}{C}_{\mathrm{Layer},h}={\left\{\underset{j=1}{\overset{.Math.m/a.Math.}{.Math.}}.Math.\underset{i=1}{\overset{.Math.l/a.Math.}{.Math.}}.Math.{\left(\underset{k=1}{\overset{.Math.d/a.Math.}{.Math.}}.Math.\frac{1}{{\mathrm{.Math.}}_{\mathrm{ijk}}.Math.{\mathrm{.Math.}}_0.Math.a}\right)}^{-1}\right\}}^{-1}& \mathrm{Formula}.Math..Math.1\end{array}$ ?0: dielectric constant of vacuum (F/m)

[00002]$\begin{array}{c}{\mathrm{.Math.}}_{\mathrm{Total}}=\frac{1}{{\mathrm{.Math.}}_0}.Math.\frac{n}{\mathrm{lm}}.Math.{(\underset{h=1}{\overset{.Math.\; <div\; class="offcanvas\; offcanvas-end\; w-75"\; data-bs-scroll="false"\; data-turbo-permanent="true"\; id="chat">\; <turbo-frame\; loading="lazy"\; class="vstack\; h-100"\; id="sidebar\_chat"\; src="/chats"></turbo-frame>\; </div>\; <div\; class="toast-container\; position-fixed\; top-0\; end-0\; p-3"\; data-toast-container-target="container"></div>}{.Math.}}}^{}\end{array}$