In a power supply system, a high-side (HS) insulated-gate bipolar transistor (IGBT) has a first collector, a first gate, and a first emitter. A low-side (LS) IGBT has a second collector coupled to the first emitter, a second gate, and a second emitter. A gate drive circuit is coupled to the first gate of the HS IGBT and the second gate of the LS IGBT. A control circuit is coupled to the gate drive circuit. The control circuit is configured to control the gate drive circuit for biasing the HS IGBT to a HS saturation, and determine a HS degradation of the HS IGBT based on a HS digitized gate voltage of the HS IGBT in the HS saturation.

Aspects of the present application are directed to an automated test equipment (ATE) and methods for operating the same for testing high-power electronic components. The inventor has recognized and appreciated an ATE that provides both high-power alternating-current (AC) and direct-current (DC) testing in a single test system can lead to high throughput testing for high-power components with reduced system hardware complexity and cost. Aspects of the present application provide a synchronized inductor switch module and both a high-precision digitizer and a high-speed digitizer for capturing DC and AC characteristics of a high-power transistor.

Performance measuring circuitry, for determining relative operational performance attributes of different types of a class of semiconductor component disposed on a semiconductor die, includes a first oscillator circuit including a plurality of first circuit element modules having a first circuit topology. The first oscillator circuit provides a first performance indication indicative of a collective performance attribute of all types of components in the class. A second oscillator circuit separate from the first oscillator circuit includes a plurality of second circuit element modules having a second circuit topology, and provides a second performance indication responsive to different contributions from different types of components in the class. A comparison circuit receives outputs of the first and second oscillator circuits and determines the relative performance characteristic of the different types of components. Dice may be binned according to performance, for use in assembly of operational circuits with different performance characteristics.

A package-integrated power semiconductor device is provided, which includes at least one power transistor coupled to a current path, a current measurement device and a package. The current measurement device is electrically insulated from and magnetically coupled to the current path. The current path and the current measurement device are arranged so as to enable the current measurement device to sense the magnetic field of a current flowing through the current path. The at least one power transistor, the current measurement device, and the current path are arranged inside the package. Further, a power module assembly including the package-integrated power semiconductor device as well as a method of operating the package-integrated power semiconductor device are provided.

A test system is a test system for conducting a test including a static characteristic test of a device under test, the test system comprising: a plurality of static characteristic units used for measurement of the static characteristic test; and a replacement unit configured to be able to attach and detach specific units among the plurality of static characteristic units, the specific units selectively used according to a measurement item.

A drive circuit for a power semiconductor element according to the present disclosure includes: a control command unit that outputs a turn-on command for a power semiconductor element; a gate voltage detection unit that detects a gate voltage applied to a gate terminal after the control command unit outputs the turn-on command; a differentiator that subjects the gate voltage detected by the gate voltage detection unit to time differentiation; and a determination unit that determines, based on the gate voltage detected by the gate voltage detection unit and a differential value by the differentiator, whether the power semiconductor element is in a short-circuit state or not.

An isolated insulated gate bipolar transistor (IGBT) gate driver is provided which integrates circuits, in-module, to support the measurements of threshold voltage, and collector-emitter saturation voltage of IGBTs. The measured gate threshold and collector-emitter saturation voltage can be used as precursors for state of health predictions for IGBTs. During the measurements, IGBTs are biased under specific conditions chosen to quickly elicit collector-emitter saturation and gate threshold information. Integrated analog-to-digital converter (ADC) circuits are used to convert measured analog signals to a digital format. The digitalized signals are transferred to a micro controller unit (MCU) for further processing through serial peripheral interface (SPI) circuits.

An optically-monitored and/or optically-controlled electronic device is described. The device includes at least one of a semiconductor transistor or a semiconductor diode. An optical detector is configured to detect light emitted by the at least one of the semiconductor transistor or the semiconductor diode during operation. A signal processor is configured to communicate with the optical detector to receive information regarding the light detected. The signal processor is further configured to provide information concerning at least one of an electrical current flowing in, a temperature of, or a condition of the at least one of the semiconductor transistor or the semiconductor diode during operation.

A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value.

A method to establish a degradation state of electrical connections in a power semiconductor device comprising:

measuring at least two voltage drop values under two respective current values for the same temperature value. The two current values are strictly different or the measurements are made under two distinct gate levels of a transistor;

saving the measured values as calibration data;

monitoring operational conditions of said power semiconductor device;

measuring at least two voltage drop values under respective same current values as preceding, and at two respective moments during which the monitored operational conditions corresponding to two respective predefined sets of criteria related to states of operation and to a common temperature;

saving the at least two values as operational data;

calculating a numerical index in a manner to estimate a degradation state of said power semiconductor device.